Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
    2.
    发明授权
    Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor 有权
    用于在流通式等离子体反应器中生产IV族纳米颗粒的方法和装置

    公开(公告)号:US08471170B2

    公开(公告)日:2013-06-25

    申请号:US12113451

    申请日:2008-05-01

    IPC分类号: B23K10/00 H01J7/24

    摘要: A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the first outer electrode and the central electrode.

    摘要翻译: 公开了一种用于从前体气体制备一组IV族半导体纳米颗粒的等离子体处理装置。 所述装置包括外电介质管,所述外管包括外管内表面和外管外表面,其中所述外管内表面具有外管内表面蚀刻速率。 所述装置还包括内部介电管,所述内部介电管包括内管外表面,其中所述外管内表面和所述内管外表面限定环形通道,并且其中所述内管外表面具有内管外表面 表面蚀刻速率。 该装置还包括第一外电极,第一外电极具有设置在外管外表面上的第一外电极内表面。 所述装置还包括第一中心电极,所述第一中心电极设置在所述内部电介质管内,所述第一中心电极还被配置为当将第一RF能量源施加到所述第一外部电极之一时被耦合到所述第一外部电极 和第一中心电极; 以及限定在所述第一外部电极和所述中心电极之间的第一反应区域。

    METHODS AND APPARATUS FOR THE PRODUCTION OF GROUP IV NANOPARTICLES IN A FLOW-THROUGH PLASMA REACTOR
    3.
    发明申请
    METHODS AND APPARATUS FOR THE PRODUCTION OF GROUP IV NANOPARTICLES IN A FLOW-THROUGH PLASMA REACTOR 有权
    在流动等离子体反应器中生产IV族纳米颗粒的方法和装置

    公开(公告)号:US20090044661A1

    公开(公告)日:2009-02-19

    申请号:US12113451

    申请日:2008-05-01

    摘要: A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the first outer electrode and the central electrode.

    摘要翻译: 公开了一种用于从前体气体制备一组IV族半导体纳米颗粒的等离子体处理装置。 所述装置包括外电介质管,所述外管包括外管内表面和外管外表面,其中所述外管内表面具有外管内表面蚀刻速率。 所述装置还包括内部介电管,所述内部介电管包括内管外表面,其中所述外管内表面和所述内管外表面限定环形通道,并且其中所述内管外表面具有内管外表面 表面蚀刻速率。 该装置还包括第一外电极,第一外电极具有设置在外管外表面上的第一外电极内表面。 所述装置还包括第一中心电极,所述第一中心电极设置在所述内部电介质管内,所述第一中心电极还被配置为当将第一RF能量源施加到所述第一外部电极之一时被耦合到所述第一外部电极 和第一中心电极; 以及限定在所述第一外部电极和所述中心电极之间的第一反应区域。