公开(公告)号：US20110053352A1

公开(公告)日：2011-03-03

申请号：US12926252

申请日：2010-11-04

申请人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

发明人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

IPC分类号： H01L21/20 ,  B82Y30/00

CPC分类号： H01L21/02601 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02524 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  Y10S977/892

摘要： A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.

摘要翻译： 公开了一种在室中的基板上形成钝化的致密纳米颗粒薄膜的方法。 该方法包括在衬底上的第一区域上沉积纳米颗粒油墨，纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热到约30℃至约400℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成紧凑。 该方法还包括使氧化剂气体流入室中; 并将所述多孔压块加热至约600℃至约1000℃的第二温度和约5秒至约1小时的第二时间段; 其中形成钝化的致密纳米颗粒薄膜。

公开(公告)号：US20110028000A1

公开(公告)日：2011-02-03

申请号：US12889958

申请日：2010-09-24

申请人： Elena Rogojina ,  Eric Rosenfeld ,  Dmitry Poplavskyy

发明人： Elena Rogojina ,  Eric Rosenfeld ,  Dmitry Poplavskyy

IPC分类号： H01L21/306

CPC分类号： H01L21/30604 ,  H01L21/2255 ,  H01L31/068 ,  Y02E10/547

摘要： A method for selectively etching a silicon-containing film on a silicon substrate is disclosed. The method includes depositing a silicon-containing film on the silicon substrate. The method further includes baking the silicon-containing film to create a densified silicon-containing film, wherein the densified film has a first thickness. The method also includes exposing the silicon substrate to an aqueous solution comprising NH4F and HF in a ratio of between about 6:1 and about 100:1, at a temperature of between about 20° C. and about 50° C., and for a time period of between about 30 seconds and about 5 minutes; wherein between about 55% and about 95% of the densified silicon-containing film is removed.

摘要翻译： 公开了一种在硅衬底上选择性地蚀刻含硅膜的方法。 该方法包括在硅衬底上沉积含硅膜。 该方法还包括烘烤含硅膜以产生致密的含硅膜，其中致密化膜具有第一厚度。 该方法还包括将硅衬底暴露于包含NH 4 F和HF的水溶液中，其比例为约6:1至约100:1，温度为约20℃至约50℃，而对于 约30秒至约5分钟的时间; 其中除去致密化的含硅膜的约55％至约95％。

公开(公告)号：US20080254601A1

公开(公告)日：2008-10-16

申请号：US12060528

申请日：2008-04-01

申请人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

发明人： Mason Terry ,  Malcolm Abbott ,  Maxim Kelman ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Eric Schiff

IPC分类号： H01L21/208

CPC分类号： H01L21/02667 ,  H01L21/02524 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628

摘要： A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

摘要翻译： 公开了一种用于在腔室中制造IV族半导体薄膜的方法。 该方法包括将衬底定位在腔室中，其中腔室还具有腔室压力。 该方法还包括在衬底上沉积纳米颗粒油墨，所述纳米颗粒油墨包括IV族半导体纳米颗粒和溶剂组，其中该组IV半导体纳米颗粒的每个纳米颗粒包括纳米颗粒表面，其中第IV族半导体纳米颗粒 形成了。 该方法还包括冲击氢等离子体; 以及将所述IV族半导体纳米颗粒层加热至约300℃至约1350℃，约1纳秒至约10分钟之间的制备温度; 其中形成IV族半导体薄膜。

公开(公告)号：US20080063855A1

公开(公告)日：2008-03-13

申请号：US11851004

申请日：2007-09-06

申请人： Maxim Kelman ,  Pingrong Yu ,  Manikandan Jayaraman ,  Dmitry Poplavskyy ,  David Jurbergs ,  Francesco Lemmi ,  Homer Antoniadis

发明人： Maxim Kelman ,  Pingrong Yu ,  Manikandan Jayaraman ,  Dmitry Poplavskyy ,  David Jurbergs ,  Francesco Lemmi ,  Homer Antoniadis

IPC分类号： B32B3/26 ,  H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  Y10T428/249954 ,  Y10T428/31678

摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.

摘要翻译： 描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。 这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

公开(公告)号：US09306087B2

公开(公告)日：2016-04-05

申请号：US13602919

申请日：2012-09-04

申请人： Giuseppe Scardera ,  Maxim Kelman ,  Elena V Rogojina ,  Dmitry Poplavskyy ,  Elizabeth Tai ,  Gonghou Wang

发明人： Giuseppe Scardera ,  Maxim Kelman ,  Elena V Rogojina ,  Dmitry Poplavskyy ,  Elizabeth Tai ,  Gonghou Wang

IPC分类号： H01L21/22 ,  H01L21/368 ,  H01L21/208 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.

摘要翻译： 一种用于制造具有局部扩散的后侧的光伏电池的方法，包括以下步骤：（a）提供掺杂的硅衬底，所述衬底包括前面朝上的朝向的表面和后表面; （b）在前表面和后表面上形成二氧化硅层; （c）以图案形式在后表面上沉积含硼掺杂浆料，所述含硼浆料包含硼化合物和溶剂; （d）以图案形式在后表面上沉积含磷掺杂浆料，所述含磷掺杂浆料包含磷化合物和溶剂; （e）将环境中的硅衬底加热到​​第一温度并且持续第一时间段，以便将硼和磷局部地扩散到硅衬底的后表面中。

公开(公告)号：US08420517B2

公开(公告)日：2013-04-16

申请号：US12656710

申请日：2010-02-12

申请人： Giuseppe Scardera ,  Shihai Kan ,  Maxim Kelman ,  Dmitry Poplavskyy

发明人： Giuseppe Scardera ,  Shihai Kan ,  Maxim Kelman ,  Dmitry Poplavskyy

IPC分类号： H01L21/22 ,  H01L21/38

CPC分类号： H01L21/2255 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The method further includes depositing an ink on the front substrate surface in a ink pattern, the ink comprising a set of silicon-containing particles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a second temperature and for a second time period, wherein a PSG layer is formed on the front substrate surface and on the densified film ink pattern; and heating the substrate in a drive-in ambient to a third temperature; wherein a first diffused region with a first sheet resistance is formed under the front substrate surface covered by the densified film ink pattern, and a second diffused region with a second sheet resistance is formed under the front substrate surface not covered with the densified film ink pattern, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.

摘要翻译： 公开了一种在衬底上形成多掺杂结的方法。 该方法包括提供掺杂有硼原子的衬底，该衬底包括前衬底表面。 该方法还包括以油墨图案在前基板表面上沉积油墨，该油墨包括一组含硅颗粒和一组溶剂。 该方法还包括将烘烤环境中的基材加热到第一温度并在第一时间段内，以便产生致密的薄膜油墨图案。 该方法还包括：在具有沉积环境的扩散炉中将衬底暴露于掺杂剂源，沉积环境包括POCl 3，载体N2气体，主N 2气体和在第二温度下的反应性O 2气体，并且第二次 其中在前基板表面和致密薄膜墨图案上形成PSG层; 以及将驱动环境中的衬底加热至第三温度; 其特征在于，在被所述致密膜油墨图案覆盖的前面基板表面的下方形成有具有第一薄层电阻的第一扩散区域，在未被所述致密化薄膜墨水图案覆盖的所述前面基板表面的下方形成具有第二薄层电阻的第二扩散区域 ，并且其中所述第一薄层电阻基本上小于所述第二薄层电阻。

公开(公告)号：US08163587B2

公开(公告)日：2012-04-24

申请号：US12506811

申请日：2009-07-21

申请人： Giuseppe Scardera ,  Dmitry Poplavskyy ,  Michael Burrows ,  Sunil Shah

发明人： Giuseppe Scardera ,  Dmitry Poplavskyy ,  Michael Burrows ,  Sunil Shah

IPC分类号： H01L21/22

CPC分类号： H01L21/2255 ,  H01L31/068 ,  Y02E10/547

摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface, and depositing an ink on the front substrate surface in an ink pattern, the ink comprising a set of nanoparticles and a set of solvents. The method further includes heating the substrate in a baking ambient to a first temperature of between about 200° C. and about 800° C. and for a first time period of between about 3 minutes and about 20 minutes in order to create a densified film ink pattern. The method also includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas, wherein a ratio of the carrier N2 gas to the reactive O2 gas is between about 1:1 to about 1.5:1, at a second temperature of between about 700° C. and about 1000° C., and for a second time period of about 5 minutes to about 35 minutes. The method also includes heating the substrate in a drive-in ambient to a third temperature of between about 800° C. and about 1100° C.

摘要翻译： 公开了一种在衬底上形成多掺杂结的方法。 所述方法包括提供掺杂有硼原子的衬底，所述衬底包括前衬底表面，以及以油墨图案在所述前衬底表面上沉积墨，所述油墨包括一组纳米颗粒和一组溶剂。 该方法还包括将烘烤环境中的基材加热至约200℃至约800℃的第一温度和约3分钟至约20分钟的第一时间段，以便产生致密化的膜 墨水图案。 该方法还包括在具有沉积环境的扩散炉中将衬底暴露于掺杂剂源，沉积环境包括POCl 3，载体N2气体，主N 2气体和反应性O 2气体，其中载气N2气体 至反应性O 2气体的摩尔比为约1:1至约1.5:1，第二温度为约700℃至约1000℃，第二时间为约5分钟至约35分钟。 该方法还包括将驱动环境中的衬底加热至约800℃至约1100℃的第三温度。

公开(公告)号：US20090239330A1

公开(公告)日：2009-09-24

申请号：US12050635

申请日：2008-03-18

申请人： Karel Vanheusden ,  Francesco Lemmi ,  Dmitry Poplavskyy ,  Mason Terry ,  Malcolm Abbott

发明人： Karel Vanheusden ,  Francesco Lemmi ,  Dmitry Poplavskyy ,  Mason Terry ,  Malcolm Abbott

IPC分类号： H01L21/00

CPC分类号： H01L31/022425 ,  Y02E10/50 ,  Y10S977/773 ,  Y10S977/775 ,  Y10S977/777 ,  Y10S977/778 ,  Y10S977/939

摘要： A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.

摘要翻译： 公开了一种用于形成与基板的接触的方法。 所述方法包括提供衬底，所述衬底被掺杂有第一掺杂剂; 并且将第二掺杂剂扩散到所述衬底的至少第一侧中以形成第二掺杂剂区域，所述第一侧还包括第一侧表面区域。 该方法还包括在基板的第一侧上形成介电层。 该方法还包括在电介质层上形成一组复合层区域，其中该组复合层区域的每个复合层区域还包括一组IV族半导体纳米颗粒和一组金属颗粒。 该方法还包括将该组复合层区域加热到第一温度，其中该组复合层区域中的至少一些复合层区域蚀刻通过介电层并与第二掺杂剂区域形成一组接触。

公开(公告)号：US20090233426A1

公开(公告)日：2009-09-17

申请号：US12047824

申请日：2008-03-13

申请人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

发明人： Dmitry Poplavskyy ,  Maxim Kelman ,  Mason Terry

IPC分类号： H01L21/208

CPC分类号： H01L21/02601 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02524 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  Y10S977/892

摘要： A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.

摘要翻译： 公开了一种在室中的基板上形成钝化的致密纳米颗粒薄膜的方法。 该方法包括在衬底上的第一区域上沉积纳米颗粒油墨，纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。 该方法还包括将纳米颗粒油墨加热到约30℃至约400℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔 形成紧凑。 该方法还包括使氧化剂气体流入室中; 并将所述多孔压块加热至约600℃至约1000℃的第二温度和约5秒至约1小时的第二时间段; 其中形成钝化的致密纳米颗粒薄膜。

公开(公告)号：US08361834B2

公开(公告)日：2013-01-29

申请号：US12714941

申请日：2010-03-01

申请人： Dmitry Poplavskyy ,  Malcolm Abbott

发明人： Dmitry Poplavskyy ,  Malcolm Abbott

IPC分类号： H01L21/00 ,  H01L21/265 ,  H01L29/10 ,  H01L29/40

CPC分类号： H01L31/022425 ,  Y02E10/50

摘要： A method of forming an ohmic contact on a substrate is described. The method includes depositing a set of silicon particles on the substrate surface. The method also includes heating the substrate in a baking ambient to a baking temperature and for a baking time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a deposition temperature and for a deposition time period, wherein a PSG layer is formed on the substrate surface. The method also includes heating the substrate in a drive-in ambient to a drive-in temperature and for a drive-in time period; and depositing a silicon nitride layer. The method further includes depositing a set of metal contacts on the set of silicon particles; and heating the substrate to a firing temperature and for a firing time period.

摘要翻译： 描述了在衬底上形成欧姆接触的方法。 该方法包括在衬底表面上沉积一组硅颗粒。 该方法还包括将烘烤环境中的基材加热到烘烤温度和烘烤时间段，以便产生致密的薄膜油墨图案。 该方法还包括在沉积环境中将基板暴露于扩散炉中的掺杂剂源，沉积环境包括POCl 3，载气N2气体，主N 2气体和反应性O 2气体，其沉积温度和沉积时间 周期，其中在基板表面上形成PSG层。 该方法还包括将驱动环境中的衬底加热到​​驱动温度和驱动时间段; 并沉积氮化硅层。 该方法还包括在一组硅颗粒上沉积一组金属触点; 并将基板加热至烧成温度和烧制时间。