公开(公告)号：US20100221903A1

公开(公告)日：2010-09-02

申请号：US12714941

申请日：2010-03-01

Applicant: Dmitry POPLAVSKYY ,  Malcolm Abbott

Inventor： Dmitry POPLAVSKYY ,  Malcolm Abbott

IPC: H01L21/22

CPC classification number: H01L31/022425 ,  Y02E10/50

Abstract: A method of forming an ohmic contact on a substrate is described. The method includes depositing a set of silicon particles on the substrate surface. The method also includes heating the substrate in a baking ambient to a baking temperature and for a baking time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a deposition temperature and for a deposition time period, wherein a PSG layer is formed on the substrate surface. The method also includes heating the substrate in a drive-in ambient to a drive-in temperature and for a drive-in time period; and depositing a silicon nitride layer. The method further includes depositing a set of metal contacts on the set of silicon particles; and heating the substrate to a firing temperature and for a firing time period.

Abstract translation: 描述了在衬底上形成欧姆接触的方法。 该方法包括在衬底表面上沉积一组硅颗粒。 该方法还包括将烘烤环境中的基材加热到烘烤温度和烘烤时间段，以便产生致密的薄膜油墨图案。 该方法还包括在沉积环境中将基板暴露于扩散炉中的掺杂剂源，沉积环境包括POCl 3，载气N2气体，主N 2气体和反应性O 2气体，其沉积温度和沉积时间 周期，其中在基板表面上形成PSG层。 该方法还包括将驱动环境中的衬底加热到​​驱动温度和驱动时间段; 并沉积氮化硅层。 该方法还包括在一组硅颗粒上沉积一组金属触点; 并将基板加热至烧成温度和烧制时间。