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    Side shielded magnetoresistive(MR) read with perpendicular magnetic free layer
    2.
    发明申请
    Side shielded magnetoresistive(MR) read with perpendicular magnetic free layer 有权
    侧面屏蔽磁阻（MR）用垂直磁性自由层读取

    公开(公告)号：US20110273802A1

    公开(公告)日：2011-11-10

    申请号：US12799924

    申请日：2010-05-05

    Applicant: Yuchen Zhou ,  Kunliang Zhang ,  Zhigang Bai

    Inventor： Yuchen Zhou ,  Kunliang Zhang ,  Zhigang Bai

    IPC: G11B5/33

    CPC classification number: G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/02 ,  H01L43/08

    Abstract: A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA) which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After patterning, a conformal insulation layer is formed along the sensor sidewall. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths

    Abstract translation: 公开了具有垂直磁各向异性（PMA）的自由层（FL）的MR传感器，其不需要相邻的硬偏置结构来稳定自由层磁化并使屏蔽-FL相互作用最小化。 在TMR实施例中，种子层，自由层，结层，参考层和钉扎层依次形成在底部屏蔽上。 在图案化之后，沿传感器侧壁形成保形绝缘层。 此后，在绝缘层上形成顶部屏蔽，并且包括通过狭窄的读取间隙与FL分离的侧面屏蔽。 当PMA大于FL自扫描场时，传感器可缩放到宽度<50 nm。 有效偏置场对传感器纵横比相当不敏感，这使得高条纹和窄宽度传感器成为高RA TMR配置的可行方法。 侧面屏蔽可以延伸到种子层平面以下。

    Spin injection layer robustness for microwave assisted magnetic recording
    4.
    发明申请
    Spin injection layer robustness for microwave assisted magnetic recording 有权
    微波辅助磁记录的自旋注入层鲁棒性

    公开(公告)号：US20130082787A1

    公开(公告)日：2013-04-04

    申请号：US13200844

    申请日：2011-10-03

    Applicant: Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

    Inventor： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

    IPC: H03B7/00 ,  C23C14/14 ,  C23C14/35 ,  B05D5/00 ,  B05D3/02

    CPC classification number: H03B15/006 ,  C23C14/025 ,  C23C14/165 ,  G11C5/005 ,  G11C11/161 ,  Y10T428/1114

    Abstract: A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.

    Abstract translation: 具有在自旋注入层（SIL）和场产生层（FGL）之间形成的非磁性间隔物的自旋转移（扭矩）振荡器（STO），以及由Fe（100-V）CoV组成的界面层，其中v 公开了在SIL和非磁性间隔物之间​​形成的5至100原子％。 使用由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层来增强STO器件中的垂直磁各向异性（PMA）。 界面层淬灭SIL振荡，从而使SIL稳定于FGL振荡。 界面层优选具有5至50埃的厚度，并且增强STO器件中的振幅（dR / R）。 STO设备可能具有顶部SIL或底部SIL配置。 SIL通常是诸如（Co / Ni）X的层压结构，其中x在5和50之间。

    Field tunable spin torque oscillator for RF signal generation
    5.
    发明授权
    Field tunable spin torque oscillator for RF signal generation 有权
    用于RF信号产生的现场可调自旋转矩振荡器

    公开(公告)号：US08203389B1

    公开(公告)日：2012-06-19

    申请号：US12928194

    申请日：2010-12-06

    Applicant: Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

    Inventor： Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

    IPC: H03L7/26

    CPC classification number: H03B15/006

    Abstract: A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.

    Abstract translation: 公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考 层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。 当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。 因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。

    FIELD TUNABLE SPIN TORQUE OSCILLATOR FOR RF SIGNAL GENERATION
    6.
    发明申请
    FIELD TUNABLE SPIN TORQUE OSCILLATOR FOR RF SIGNAL GENERATION 有权
    用于RF信号发生的现场可调旋转扭矩振荡器

    公开(公告)号：US20120139649A1

    公开(公告)日：2012-06-07

    申请号：US12928194

    申请日：2010-12-06

    Applicant: Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

    Inventor： Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

    IPC: H03B28/00

    CPC classification number: H03B15/006

    Abstract: A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.

    Abstract translation: 公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考 层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。 当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。 因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。

    Electric field assisted magnetic recording
    9.
    发明授权
    Electric field assisted magnetic recording 有权
    电场辅助磁记录

    公开(公告)号：US08023218B2

    公开(公告)日：2011-09-20

    申请号：US12313796

    申请日：2008-11-25

    Applicant: Yuchen Zhou ,  Kowang Liu ,  Kunliang Zhang ,  Erhard Schreck

    Inventor： Yuchen Zhou ,  Kowang Liu ,  Kunliang Zhang ,  Erhard Schreck

    IPC: G11B5/02

    CPC classification number: G11B5/1278 ,  G11B2005/001

    Abstract: We describe a system for electric field assisted magnetic recording where a recordable magnetic medium includes a magnetic recording layer of high coercivity and vertical magnetic anisotropy that is adjacent to an electrostrictive layer which can be placed in a state of stress by a electric field or which is already pre-stressed and which pre-stress can be turned into strain by an electric field. When the magnetic medium is acted on simultaneously by a magnetic writing field and an electric field, the stress in the electrostrictive layer is transferred to a magnetostrictive layer which is the magnetic recording layer by itself or is coupled to the magnetic recording layer, whereupon the magnetic recording layer is made more isotropic and more easily written upon. Residual stresses in the electrostrictive layer can then be removed by an additional electric field of opposite sign to the stress-producing field.

    Abstract translation: 我们描述了一种用于电场辅助磁记录的系统，其中可记录磁介质包括与矫顽力层相邻的具有高矫顽力和垂直磁各向异性的磁记录层，该电致伸缩层可通过电场置于应力状态， 已经预应力，哪些预应力可以通过电场变成应变。 当磁介质由磁场和电场同时作用时，电致伸缩层中的应力自身转移到作为磁记录层的磁致伸缩层，或耦合到磁记录层，由此磁性 记录层变得更加各向同性，更容易写入。 电致伸缩层中的残余应力然后可以通过与应力产生场相反的附加电场来去除。

    Perpendicular magnetic medium with shields between tracks
    10.
    发明授权
    Perpendicular magnetic medium with shields between tracks 有权
    轨道之间具有屏蔽的垂直磁性介质

    公开(公告)号：US08795763B2

    公开(公告)日：2014-08-05

    申请号：US12005182

    申请日：2007-12-26

    Applicant: Yuchen Zhou ,  Lijie Guan ,  Kunliang Zhang

    Inventor： Yuchen Zhou ,  Lijie Guan ,  Kunliang Zhang

    IPC: G11B5/74

    CPC classification number: G11B5/746 ,  B82Y10/00 ,  C23C14/225 ,  C23C16/45555 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855

    Abstract: A track shield structure is disclosed that enables higher track density to be achieved in a patterned track medium without increasing adjacent track erasure and side reading. This is accomplished by placing a soft magnetic shielding structure in the space that is present between the tracks in the patterned medium. A process for manufacturing the added shielding structure is also described.

    Abstract translation: 公开了一种轨道屏蔽结构，其能够在图案化的轨道介质中实现更高的轨道密度，而不增加相邻轨迹擦除和侧面读数。 这通过在存在于图案化介质中的轨道之间的空间中放置软磁屏蔽结构来实现。 还描述了用于制造附加的屏蔽结构的方法。

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