公开(公告)号：US20140342573A1

公开(公告)日：2014-11-20

申请号：US14240897

申请日：2012-08-01

Applicant: Yoshiro Hirose ,  Ryuji Yamamoto

Inventor： Yoshiro Hirose ,  Ryuji Yamamoto

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/30 ,  C23C16/455 ,  H01L21/67 ,  C23C16/36

CPC classification number: H01L21/0214 ,  C23C16/308 ,  C23C16/36 ,  C23C16/401 ,  C23C16/455 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/02109 ,  H01L21/02115 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/67098 ,  H01L21/67109

Abstract: There is provided a method for manufacturing a semiconductor device, including forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing the following steps prescribed number of times: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing prescribed number of times: supplying a first source gas containing the specific element and a halogen-group to the substrate, and supplying a second source gas containing the specific element and an amino-group to the substrate, and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate.

Abstract translation: 提供了一种制造半导体器件的方法，包括通过交替执行以下步骤在基片上形成含有特定元素的薄膜并规定次数：形成含有特定元素的第一层，氮， 和碳，通过交替执行预定次数：向基板供给含有特定元素和卤素基团的第一源气体，并向基板供给含有特定元素和氨基的第二源气体， 以及通过将不同于每种源气体的反应气体提供给所述衬底来修饰所述第一层而形成第二层。

公开(公告)号：US09165761B2

公开(公告)日：2015-10-20

申请号：US14240897

申请日：2012-08-01

Applicant: Yoshiro Hirose ,  Ryuji Yamamoto

Inventor： Yoshiro Hirose ,  Ryuji Yamamoto

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/36 ,  C23C16/40 ,  C23C16/455 ,  H01L21/67 ,  C23C16/30 ,  C23C16/52

CPC classification number: H01L21/0214 ,  C23C16/308 ,  C23C16/36 ,  C23C16/401 ,  C23C16/455 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/02109 ,  H01L21/02115 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/67098 ,  H01L21/67109

Abstract: There is provided a method for manufacturing a semiconductor device, including forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing the following steps prescribed number of times: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing prescribed number of times: supplying a first source gas containing the specific element and a halogen-group to the substrate, and supplying a second source gas containing the specific element and an amino-group to the substrate, and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate.

Abstract translation: 提供了一种制造半导体器件的方法，包括通过交替执行以下步骤在基片上形成含有特定元素的薄膜并规定次数：形成含有特定元素的第一层，氮， 和碳，通过交替执行预定次数：向基板供给含有特定元素和卤素基团的第一源气体，并向基板供给含有特定元素和氨基的第二源气体， 以及通过将不同于每种源气体的反应气体提供给所述衬底来修饰所述第一层而形成第二层。

公开(公告)号：US09378943B2

公开(公告)日：2016-06-28

申请号：US13345885

申请日：2012-01-09

Applicant: Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

Inventor： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

IPC: H01L21/314 ,  H01L21/02 ,  C23C16/30 ,  C23C16/36 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/36 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211

Abstract: An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a heated substrate in a processing vessel to form a carbonitride layer including the element, and supplying the gas containing the element and an oxygen-containing gas to the heated substrate in the processing vessel to form an oxide layer including the element are alternately repeated to form on the substrate an oxycarbonitride film having the carbonitride layer and the oxide layer alternately stacked therein.

Abstract translation: 形成包括低介电常数，低蚀刻速率和高绝缘性等特性的绝缘膜。 在处理容器中向加热的基板供给含有元素，含碳气体和含氮气体的气体，以形成包含该元素的碳氮化物层，并将含有元素和含氧气体的气体供给到 处理容器中加热的衬底以形成包含该元件的氧化物层交替重复，以在衬底上形成具有碳氮化物层和氧化物层交替堆叠的碳氮氧化物膜。

公开(公告)号：US09196473B2

公开(公告)日：2015-11-24

申请号：US13976673

申请日：2011-12-16

Applicant: Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

Inventor： Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

IPC: C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/0214 ,  C23C16/308 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45563 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228

Abstract: A method that includes: forming a specific element-containing layer by supplying a source gas to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas through the nozzle.

Abstract translation: 一种方法，其包括：在引起所述源气体的热分解反应的条件下，通过将源气体供给到在处理容器中加热的基板来形成特定含有元素的层; 通过向所述基板供给含氮气体，将所述特定含有元素的层改变为氮化物层; 并且通过向基板供给含氧气体来将氮化物层改变为氮氧化物层，源极气体比与惰性气体平行喷射惰性气体的情况更加强烈地喷射到基板的表面上 在通过喷嘴供给惰性气体或含氢气体时，清洗处理容器内部的基板。

公开(公告)号：US09039838B2

公开(公告)日：2015-05-26

申请号：US13553968

申请日：2012-07-20

Applicant: Ryota Sasajima ,  Yoshiro Hirose ,  Yosuke Ota ,  Naonori Akae ,  Kojiro Yokozawa

Inventor： Ryota Sasajima ,  Yoshiro Hirose ,  Yosuke Ota ,  Naonori Akae ,  Kojiro Yokozawa

IPC: C23C16/54 ,  C23C16/56 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316

CPC classification number: H01L21/0223 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31645 ,  H01L21/32051 ,  H01L21/321

Abstract: Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure.

Abstract translation: 提供了一种基板处理装置。 该设备包括：处理容器，加热器，源气体供应系统，含氧气体供应系统，含氢气体供应系统，压力调节器和控制器。 所述控制器被配置为控制所述部件，以便执行以下操作：（a）通过交替地重复以下步骤：（a-1）通过将源气体供应到容纳所述基板的处理容器中而形成层，从而在基板上形成氧化膜; 和（a-2）通过向处理容器供给含氧气体和含氢气体将层改变为氧化物层，处理容器的内部处于低压的加热气氛下; 和（b）通过向处理容器供给含氧气体和含氢气体来改性在基板上形成的氧化膜，处理容器的内部处于低压的加热气氛下。

公开(公告)号：US08673790B2

公开(公告)日：2014-03-18

申请号：US13155997

申请日：2011-06-08

Applicant: Naonori Akae ,  Yoshiro Hirose ,  Kotaro Murakami

Inventor： Naonori Akae ,  Yoshiro Hirose ,  Kotaro Murakami

IPC: H01L21/30

CPC classification number: H01L21/02167 ,  C23C16/4405 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/32135

Abstract: A method of manufacturing a semiconductor device includes supplying a process gas into a process vessel accommodating a substrate to form a thin film on the substrate and supplying a cleaning gas into the process vessel to clean an inside of the process vessel, after the supplying the process gas to form the thin film is performed a predetermined number of times. When cleaning the inside of the process vessel, a fluorine-containing gas, an oxygen-containing gas and a hydrogen-containing gas are supplied as the cleaning gas into the process vessel heated and kept at a pressure less than an atmospheric pressure to remove a deposit including the thin film adhering to the inside of the process vessel through a thermochemical reaction.

Abstract translation: 一种制造半导体器件的方法包括：将处理气体供应到容纳衬底的处理容器中，以在衬底上形成薄膜，并在提供过程之后将清洁气体供应到处理容器中以清洁处理容器的内部 进行预定次数的形成薄膜的气体。 当清洁处理容器的内部时，将含氟气体，含氧气体和含氢气体作为清洁气体供应到加热并保持在低于大气压的压力下的处理容器中以除去 通过热化学反应沉积包括附着在处理容器内部的薄膜。

公开(公告)号：US08535479B2

公开(公告)日：2013-09-17

申请号：US13311634

申请日：2011-12-06

Applicant: Norikazu Mizuno ,  Kenji Kanayama ,  Kazuyuki Okuda ,  Yoshiro Hirose ,  Masayuki Asai

Inventor： Norikazu Mizuno ,  Kenji Kanayama ,  Kazuyuki Okuda ,  Yoshiro Hirose ,  Masayuki Asai

IPC: H01L21/306

CPC classification number: C23C16/402 ,  C23C16/042 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/3141 ,  H01L21/31608

Abstract: Provided is a substrate processing apparatus including: a processing chamber for processing a substrate; a material supply unit for supplying a Si material, an oxidation material and a catalyst into the processing chamber; a heating unit for heating the substrate; and a controller for controlling at least the material supply unit and the heating unit, wherein the controller is configured to control the heating unit to heat the substrate with a first photoresist pattern formed thereon at a processing temperature lower than a deformation temperature of a first photoresist constituting the first photoresist pattern, and to control the material supply unit to alternately supply the silicon-containing material and the catalyst, and alternately supply the oxidation material and the catalyst into the processing chamber in a repeated manner to form on the substrate a thin film having a thickness equal to 5% of one half pitch of the first photoresist pattern.

Abstract translation: 提供了一种基板处理装置，包括：处理基板的处理室; 用于将Si材料，氧化材料和催化剂供应到处理室中的材料供应单元; 用于加热衬底的加热单元; 以及用于至少控制所述材料供应单元和所述加热单元的控制器，其中所述控制器被配置为控制所述加热单元以在低于第一光致抗蚀剂的变形温度的处理温度下形成的第一光致抗蚀剂图案来加热所述基板 构成第一光致抗蚀剂图案，并且控制材料供给单元交替地供给含硅材料和催化剂，并且以重复的方式将氧化材料和催化剂交替地供给到处理室中，以在基板上形成薄膜 其厚度等于第一光致抗蚀剂图案的一半间距的5％。

公开(公告)号：US08410001B2

公开(公告)日：2013-04-02

申请号：US13047367

申请日：2011-03-14

Applicant: Yushin Takasawa ,  Yoshiro Hirose ,  Tsukasa Kamakura ,  Yukinao Kaga

Inventor： Yushin Takasawa ,  Yoshiro Hirose ,  Tsukasa Kamakura ,  Yukinao Kaga

IPC: H01L21/31 ,  C23C16/36 ,  C23C16/44 ,  C23C16/52

CPC classification number: H01L21/0228 ,  C23C16/36 ,  C23C16/45531 ,  H01L21/02167

Abstract: An excellent type of a film is realized by modifying conventional types of films. A carbonitride film of a predetermined thickness is formed on a substrate by performing, a predetermined number of times, a cycle including the steps of: supplying a source gas into a process vessel accommodating the substrate under a condition where a CVD reaction is caused, and forming a first layer including an element on the substrate; supplying a carbon-containing gas into the process vessel to form a layer including carbon on the first layer, and forming a second layer including the element and the carbon; supplying the source gas into the process vessel under a condition where a CVD reaction is caused to additionally form a layer including the element on the second layer, and forming a third layer including the element and the carbon; and supplying a nitrogen-containing gas into the process vessel to nitride the third layer, and forming a carbonitride layer serving as a fourth layer including the element, the carbon, and nitrogen.

Abstract translation: 通过改变常规类型的膜来实现优异的膜类型。 通过执行预定次数的循环，在基板上形成预定厚度的碳氮化物膜，该循环包括以下步骤：在发生CVD反应的条件下将源气体供应到容纳基板的处理容器中，以及 在所述基板上形成包括元件的第一层; 将含碳气体供应到所述处理容器中以在所述第一层上形成包含碳的层，以及形成包含所述元素和所述碳的第二层; 在引起CVD反应的条件下将源气体供给到处理容器中，在第二层上另外形成包含该元素的层，形成包含该元素和碳的第三层; 并向所述处理容器中供给含氮气体以氮化所述第三层，以及形成用作包含所述元素，所述碳和氮的第四层的碳氮化物层。

公开(公告)号：US08367557B2

公开(公告)日：2013-02-05

申请号：US12607223

申请日：2009-10-28

Applicant: Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

Inventor： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC: H01L21/314 ,  H01L21/316 ,  H01L21/318

CPC classification number: H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

Abstract: A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate oxidizing species containing oxygen, and oxidizing the element-containing layer by the oxidizing species; wherein the hydrogen-containing gas is supplied into the process vessel together with the source gas in step (a).

Abstract translation: 一种制造半导体器件的方法，所述方法包括：通过交替地重复以下步骤，在衬底上形成氧化物膜：（a）通过将含有元素的源气体供应到容纳衬底的处理容器中而在衬底上形成含元素层 ; 和（b）通过向内压低于大气压的处理容器供给含氧气体和含氢气体将含元素层改变为氧化物层，使含氧气体与氢气气体反应， 含氧气体生成含氧的氧化物质，氧化物质氧化含元素层; 其中在步骤（a）中所述含氢气体与所述源气体一起供应到所述处理容器中。

公开(公告)号：US20090277382A1

公开(公告)日：2009-11-12

申请号：US12406728

申请日：2009-03-18

Applicant: Norikazu Mizuno ,  Kenji Kanayama ,  Kazuyuki Okuda ,  Yoshiro Hirose ,  Masayuki Asai

Inventor： Norikazu Mizuno ,  Kenji Kanayama ,  Kazuyuki Okuda ,  Yoshiro Hirose ,  Masayuki Asai

IPC: C23C16/42

CPC classification number: C23C16/402 ,  C23C16/042 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/3141 ,  H01L21/31608

Abstract: Provided is a semiconductor manufacturing apparatus, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The semiconductor manufacturing apparatus comprises: a photoresist processing unit for forming a photoresist pattern in a predetermined region on a substrate to which a predetermined process is applied; and a substrate processing unit for forming a thin film on the surface of at least the photoresist pattern.

Abstract translation: 提供了能够实现细间距图案并因此提高图案精度稳定性的半导体制造装置。 半导体制造装置包括：光致抗蚀剂处理单元，用于在施加了预定处理的基板上的预定区域中形成光致抗蚀剂图案; 以及用于在至少光致抗蚀剂图案的表面上形成薄膜的基板处理单元。