Invention Application
US20140342573A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM
有权
用于制造半导体器件的方法，用于处理衬底的方法，衬底处理装置和记录介质
- Patent Title: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM
- Patent Title (中): 用于制造半导体器件的方法，用于处理衬底的方法，衬底处理装置和记录介质
-
Application No.: US14240897Application Date: 2012-08-01
-
Publication No.: US20140342573A1Publication Date: 2014-11-20
- Inventor: Yoshiro Hirose , Ryuji Yamamoto
- Applicant: Yoshiro Hirose , Ryuji Yamamoto
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Priority: JP2011-183815 20110825
- International Application: PCT/JP2012/069562 WO 20120801
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/52 ; C23C16/30 ; C23C16/455 ; H01L21/67 ; C23C16/36
Abstract:
There is provided a method for manufacturing a semiconductor device, including forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing the following steps prescribed number of times: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing prescribed number of times: supplying a first source gas containing the specific element and a halogen-group to the substrate, and supplying a second source gas containing the specific element and an amino-group to the substrate, and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate.
Public/Granted literature
Information query
IPC分类:
