公开(公告)号：US20160276459A1

公开(公告)日：2016-09-22

申请号：US15168524

申请日：2016-05-31

Applicant: Texas Instruments Incorporated

Inventor： Jacek Korec ,  John Manning Savidge Neilson ,  Sameer Pendharkar

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/739

CPC classification number: H01L29/66333 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/32053 ,  H01L29/0834 ,  H01L29/7395

Abstract: Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or grown epitaxial silicon for controlled drift region thickness and fast switching speed.

Abstract translation: 集成电路具有具有集成发射极短路的高压IGBT和使用晶片接合或生长的外延硅的制造工艺，用于控制漂移区厚度和快速开关速度。

公开(公告)号：US09246355B2

公开(公告)日：2016-01-26

申请号：US14019641

申请日：2013-09-06

Applicant: Texas Instruments Incorporated

Inventor： Jacek Korec ,  Stephen L. Colino

IPC: H02J9/04 ,  H01L29/417 ,  H01L29/78 ,  H01L29/45 ,  H01L29/49

CPC classification number: H02J9/04 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/7835 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/3025 ,  Y10T307/461 ,  Y10T307/469 ,  Y10T307/625 ,  Y10T307/696 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A semiconductor device includes a semiconductor substrate, a first p-channel laterally diffused metal oxide semiconductor (LDMOS) transistor formed over the semiconductor substrate and additional p-channel LDMOS transistors formed over the semiconductor substrate. First drain and gate electrodes are formed over the substrate and are coupled to the first LDMOS transistor. Additional drain and gate electrodes are formed over the substrate and are coupled to the second LDMOS transistor. A common source electrode for the first and second LDMOS transistors is also formed over the substrate.

公开(公告)号：US11616137B2

公开(公告)日：2023-03-28

申请号：US16821165

申请日：2020-03-17

Applicant: Texas Instruments Incorporated

Inventor： Haian Lin ,  Shuming Xu ,  Jacek Korec

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L29/47 ,  H01L29/872 ,  H01L29/417 ,  H01L29/10

Abstract: A semiconductor device containing a vertical power MOSFET with a planar gate and an integrated Schottky diode is formed by forming a source electrode on an extended drain of the vertical power MOSFET to form the Schottky diode and forming the source electrode on a source region of the vertical power MOSFET. The Schottky diode is connected through the source electrode to the source region. A drain electrode is formed at a bottom of a substrate of the semiconductor device. The Schottky diode is connected through the extended drain of the vertical power MOSFET to the drain electrode.

公开(公告)号：US09941383B2

公开(公告)日：2018-04-10

申请号：US15168524

申请日：2016-05-31

Applicant: Texas Instruments Incorporated

Inventor： Jacek Korec ,  John Manning Savidge Neilson ,  Sameer Pendharkar

IPC: H01L29/739 ,  H01L21/331 ,  H01L29/66 ,  H01L29/08 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L29/66333 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/32053 ,  H01L29/0834 ,  H01L29/7395

Abstract: Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or grown epitaxial silicon for controlled drift region thickness and fast switching speed.