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公开(公告)号：US10269701B2
公开(公告)日：2019-04-23
申请号：US14874147
申请日：2015-10-02
发明人： Chen-Fa Lu , Cheng-Yuan Tsai , Ching-Chung Hsu , Chung-Long Chang
IPC分类号： H01L29/00 , H01L23/522 , H01L21/027 , H01L21/288 , H01L21/311 , H01L21/768 , H01L23/31 , H01L23/528 , H01L23/532
摘要： The present disclosure provides a semiconductor structure having an ultra thick metal (UTM). The semiconductor structure includes a substrate, a metal layer over the substrate, and an UTM over the metal layer. An area density of the UTM is greater than 40% and a thickness of the UTM is equal to or greater than 6 micrometer. The present disclosure provides a method for manufacturing a semiconductor structure having a UTM. The method includes patterning a dielectric layer with a plurality of trenches by a first mask, patterning a photoresist positioning on a mesa between adjacent trenches by a second mask, and selectively plating conductive materials in the plurality of trenches.
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公开(公告)号：US11114378B2
公开(公告)日：2021-09-07
申请号：US16389500
申请日：2019-04-19
发明人： Chen-Fa Lu , Cheng-Yuan Tsai , Ching-Chung Hsu , Chung-Long Chang
IPC分类号： H01L29/00 , H01L23/522 , H01L23/532 , H01L21/027 , H01L21/288 , H01L21/311 , H01L21/768 , H01L23/31 , H01L23/528
摘要： The present disclosure provides a semiconductor structure having an ultra thick metal (UTM). The semiconductor structure includes a substrate, a metal layer over the substrate, and an UTM over the metal layer. An area density of the UTM is greater than 40% and a thickness of the UTM is equal to or greater than 6 micrometer. The present disclosure provides a method for manufacturing a semiconductor structure having a UTM. The method includes patterning a dielectric layer with a plurality of trenches by a first mask, patterning a photoresist positioning on a mesa between adjacent trenches by a second mask, and selectively plating conductive materials in the plurality of trenches.
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公开(公告)号：US20240355728A1
公开(公告)日：2024-10-24
申请号：US18451263
申请日：2023-08-17
发明人： Kai-Chun Chang , Hsieh-Hung Hsieh , Tzu-Jin Yeh , Ching-Chung Hsu , Chung-Long Chang , Hua-Chou Tseng
IPC分类号： H01L23/522 , H01L23/00 , H01L23/528 , H01L23/532
CPC分类号： H01L23/5227 , H01L23/5283 , H01L23/5286 , H01L23/53219 , H01L23/53233 , H01L24/05 , H01L24/13 , H01L2224/02313 , H01L2224/02331 , H01L2224/0235 , H01L2224/02373 , H01L2224/02375 , H01L2224/02381 , H01L2224/0239 , H01L2224/05548 , H01L2224/05557 , H01L2224/13007 , H01L2924/30107
摘要： A semiconductor structure includes a circuit with a redistribution layer (RDL) formed over the circuit. The redistribution layer comprises a plurality of metal layers. An inductor is formed in a topmost metal layer, and the circuit is located directly under the inductor. An under bump metallization (UBM) layer formed on the topmost metal layer and a conductive connector formed on the UBM layer.
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公开(公告)号：US11670584B2
公开(公告)日：2023-06-06
申请号：US17444334
申请日：2021-08-03
发明人： Chen-Fa Lu , Cheng-Yuan Tsai , Ching-Chung Hsu , Chung-Long Chang
IPC分类号： H01L29/00 , H01L23/522 , H01L23/532 , H01L21/027 , H01L21/288 , H01L21/311 , H01L21/768 , H01L23/31 , H01L23/528
CPC分类号： H01L23/5227 , H01L21/0273 , H01L21/288 , H01L21/31144 , H01L21/7684 , H01L21/76802 , H01L21/76879 , H01L23/3171 , H01L23/5226 , H01L23/5283 , H01L23/5329 , H01L23/53238 , H01L23/53295 , H01L2224/11
摘要： The present disclosure provides a method for manufacturing a semiconductor structure, including patterning a photo-sensitive polymer layer with a plurality of trenches by a first mask, the first mask having a first line pitch, patterning a photoresist positioning on a mesa between adjacent trenches by a second mask, the second mask having a second line pitch, the first mask and the second mask having substantially identical pattern topography, and the second line pitch being greater than the first line pitch, and selectively plating conductive material in the plurality of trenches.
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