公开(公告)号：US20240355728A1

公开(公告)日：2024-10-24

申请号：US18451263

申请日：2023-08-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kai-Chun Chang ,  Hsieh-Hung Hsieh ,  Tzu-Jin Yeh ,  Ching-Chung Hsu ,  Chung-Long Chang ,  Hua-Chou Tseng

IPC分类号： H01L23/522 ,  H01L23/00 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L23/5227 ,  H01L23/5283 ,  H01L23/5286 ,  H01L23/53219 ,  H01L23/53233 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/13007 ,  H01L2924/30107

摘要： A semiconductor structure includes a circuit with a redistribution layer (RDL) formed over the circuit. The redistribution layer comprises a plurality of metal layers. An inductor is formed in a topmost metal layer, and the circuit is located directly under the inductor. An under bump metallization (UBM) layer formed on the topmost metal layer and a conductive connector formed on the UBM layer.