发明公开
- 专利标题： SEMICONDUCTOR STRUCTURE
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申请号： US18451263申请日： 2023-08-17
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公开(公告)号： US20240355728A1公开(公告)日： 2024-10-24
- 发明人: Kai-Chun Chang , Hsieh-Hung Hsieh , Tzu-Jin Yeh , Ching-Chung Hsu , Chung-Long Chang , Hua-Chou Tseng
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L23/00 ; H01L23/528 ; H01L23/532
摘要：
A semiconductor structure includes a circuit with a redistribution layer (RDL) formed over the circuit. The redistribution layer comprises a plurality of metal layers. An inductor is formed in a topmost metal layer, and the circuit is located directly under the inductor. An under bump metallization (UBM) layer formed on the topmost metal layer and a conductive connector formed on the UBM layer.
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