公开(公告)号：US20190157456A1

公开(公告)日：2019-05-23

申请号：US16038866

申请日：2018-07-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng CHEN ,  Su-Hao LIU ,  Kuo-Ju CHEN ,  Liang-Yin CHEN

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L27/088

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes forming a modified region in the epitaxial structure. The modified region has lower crystallinity than an inner portion of the epitaxial structure and extends along an entirety of an exposed surface of the epitaxial structure. The method also includes forming a semiconductor-metal compound region on the epitaxial structure. All or some of the modified region is transformed into the semiconductor-metal compound region.

公开(公告)号：US20190131399A1

公开(公告)日：2019-05-02

申请号：US15797703

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Su-Hao LIU ,  Huicheng CHANG ,  Chia-Cheng CHEN ,  Liang-Yin CHEN ,  Kuo-Ju CHEN ,  Chun-Hung WU ,  Chang-Miao Liu ,  Huai-Tei Yang ,  Lun-Kuang Tan ,  Wei-Ming You

IPC: H01L29/08 ,  H01L29/167 ,  H01L29/78 ,  H01L21/265 ,  H01L21/285 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/26513 ,  H01L21/28518 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.

公开(公告)号：US20200266299A1

公开(公告)日：2020-08-20

申请号：US16869819

申请日：2020-05-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng CHEN ,  Su-Hao LIU ,  Kuo-Ju CHEN ,  Liang-Yin CHEN

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L27/088 ,  H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L21/223

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an epitaxial structure over a semiconductor substrate. The method also includes generating and applying plasma on an entire exposed surface of the epitaxial structure to form a modified region in the epitaxial structure. The plasma is directly applied on the source/drain structure without being filtered out, and the plasma includes ions with different charges. The method further includes forming a metal layer on the modified region and heating the metal layer and the modified region to form a metal-semiconductor compound region.

公开(公告)号：US20190157148A1

公开(公告)日：2019-05-23

申请号：US16021216

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Po HSIEH ,  Su-Hao LIU ,  Hong-Chih LIU ,  Jing-Huei HUANG ,  Jie-Huang HUANG ,  Lun-Kuang TAN ,  Huicheng CHANG ,  Liang-Yin CHEN ,  Kuo-Ju CHEN

IPC: H01L21/768 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234 ,  H01L23/522 ,  H01L23/532

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a first contact plug and a first via plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The first contact plug is positioned over the source/drain structure. The first via plug is positioned over the first contact plug. The first via plug includes a first group IV element.

公开(公告)号：US20190305107A1

公开(公告)日：2019-10-03

申请号：US15939389

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju CHEN ,  Su-Hao LIU ,  Chun-Hao KUNG ,  Liang-Yin CHEN ,  Huicheng CHANG ,  Kei-Wei CHEN ,  Hui-Chi HUANG ,  Kao-Feng LIAO ,  Chih-Hung CHEN ,  Jie-Huang HUANG ,  Lun-Kuang TAN ,  Wei-Ming YOU

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/417

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a dielectric layer, a contact plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The dielectric layer is positioned over the gate structure and the source/drain structure. The contact plug is positioned passing through the dielectric layer. The contact plug includes a first metal compound including one of group III elements, group IV elements, group V elements or a combination thereof.