公开(公告)号：US20190157148A1

公开(公告)日：2019-05-23

申请号：US16021216

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Po HSIEH ,  Su-Hao LIU ,  Hong-Chih LIU ,  Jing-Huei HUANG ,  Jie-Huang HUANG ,  Lun-Kuang TAN ,  Huicheng CHANG ,  Liang-Yin CHEN ,  Kuo-Ju CHEN

IPC: H01L21/768 ,  H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234 ,  H01L23/522 ,  H01L23/532

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a first contact plug and a first via plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The first contact plug is positioned over the source/drain structure. The first via plug is positioned over the first contact plug. The first via plug includes a first group IV element.