公开(公告)号：US20180281150A1

公开(公告)日：2018-10-04

申请号：US15473967

申请日：2017-03-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hung CHEN ,  Kei-Wei CHEN

IPC: B24B37/26 ,  B24B37/22 ,  B24B37/04 ,  H01L21/67 ,  H01L21/683

CPC classification number: B24B37/26 ,  B24B37/042 ,  B24B37/22 ,  B24B37/30 ,  H01L21/67063 ,  H01L21/6838

Abstract: A polishing pad is provided. The polishing pad includes a base layer, a top layer, and multiple grooves. The top layer is located over the base layer and has a polishing surface and a bottom surface opposite to each other. The bottom surface is connected to the base layer. The grooves are formed on the bottom surface of the top layer.

公开(公告)号：US20190305107A1

公开(公告)日：2019-10-03

申请号：US15939389

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju CHEN ,  Su-Hao LIU ,  Chun-Hao KUNG ,  Liang-Yin CHEN ,  Huicheng CHANG ,  Kei-Wei CHEN ,  Hui-Chi HUANG ,  Kao-Feng LIAO ,  Chih-Hung CHEN ,  Jie-Huang HUANG ,  Lun-Kuang TAN ,  Wei-Ming YOU

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/417

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a dielectric layer, a contact plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The dielectric layer is positioned over the gate structure and the source/drain structure. The contact plug is positioned passing through the dielectric layer. The contact plug includes a first metal compound including one of group III elements, group IV elements, group V elements or a combination thereof.

公开(公告)号：US20180281152A1

公开(公告)日：2018-10-04

申请号：US15646414

申请日：2017-07-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kei-Wei CHEN ,  Chih-Hung CHEN ,  Ying-Lang WANG

IPC: B24B57/02 ,  B24B37/04 ,  B24B37/013

Abstract: A slurry dispensing unit for a chemical mechanical polishing (CMP) apparatus is provided. The slurry dispensing unit includes a nozzle, a mixer, a first fluid source, and a second fluid source. The nozzle is configured to dispense a slurry. The mixer is disposed upstream of the nozzle. The first fluid source is connected to the mixer through a first pipe and configured to provide a first fluid including a first component of the slurry. The second fluid source is connected to the mixer through a second pipe and configured to provide a second fluid including a second component of the slurry, wherein the second component is different from the first component.