公开(公告)号：US20210210616A1

公开(公告)日：2021-07-08

申请号：US17157180

申请日：2021-01-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Chih CHEN ,  Ru-Shang HSIAO ,  Ching-Pin LIN ,  Chih-Mu HUANG ,  Fu-Tsun TSAI

IPC: H01L29/66 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/423

Abstract: A semiconductor device includes: first and second fin structures, disposed on a substrate, that respectively extend in parallel to an axis; a first gate feature that traverses the first fin structure to overlay a central portion of the first fin structure; a second gate feature that traverses the second fin structure to overlay a central portion of the second fin structure; a first spacer comprising: a first portion comprising two layers that respectively extend from sidewalls of the first gate feature toward opposite directions of the axis; and a second portion comprising two layers that respectively extend from sidewalls of the first portion of the first spacer toward the opposite directions of the axis; and a second spacer comprising two layers that respectively extend from sidewalls of the second gate feature toward the opposite directions of the axis.

公开(公告)号：US20150200299A1

公开(公告)日：2015-07-16

申请号：US14224961

申请日：2014-03-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： I-Chih CHEN ,  Ying-Lang Wang ,  Chih-Mu Huang ,  Ying-Hao Chen ,  Wen-Chang Kuo ,  Jung-Chi Jeng

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/161 ,  H01L29/167

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66628 ,  H01L29/66636

Abstract: A semiconductor device and a method of fabricating the semiconductor device are provided. The semiconductor device includes a substrate; a source/drain region having a first dopant in the substrate; a barrier layer having a second dopant formed around the source/drain region in the substrate. When a semiconductor device is scaled down, the doped profile in source/drain regions might affect the threshold voltage uniformity, the provided semiconductor device may improve the threshold voltage uniformity by the barrier layer to control the doped profile.

Abstract translation: 提供半导体器件和制造半导体器件的方法。 半导体器件包括衬底; 在衬底中具有第一掺杂剂的源/漏区; 阻挡层，其具有形成在衬底中的源极/漏极区周围的第二掺杂物。 当半导体器件按比例缩小时，源极/漏极区域中的掺杂分布可能影响阈值电压均匀性，所提供的半导体器件可以通过阻挡层来改善阈值电压均匀性以控制掺杂分布。

公开(公告)号：US20250072082A1

公开(公告)日：2025-02-27

申请号：US18938087

申请日：2024-11-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Chih CHEN ,  Ru-Shang HSIAO ,  Ching-Pin LIN ,  Chih-Mu HUANG ,  Fu-Tsun TSAI

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423

Abstract: A semiconductor device includes: first and second fin structures, disposed on a substrate, that respectively extend in parallel to an axis; a first gate feature that traverses the first fin structure to overlay a central portion of the first fin structure; a second gate feature that traverses the second fin structure to overlay a central portion of the second fin structure; a first spacer comprising: a first portion comprising two layers that respectively extend from sidewalls of the first gate feature toward opposite directions of the axis; and a second portion comprising two layers that respectively extend from sidewalls of the first portion of the first spacer toward the opposite directions of the axis; and a second spacer comprising two layers that respectively extend from sidewalls of the second gate feature toward the opposite directions of the axis.

公开(公告)号：US20150129987A1

公开(公告)日：2015-05-14

申请号：US14080313

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jung-Chi JENG ,  I-Chih CHEN ,  Wen-Chang KUO ,  Ying-Hao CHEN ,  Ru-Shang HSIAO ,  Chih-Mu HUANG

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7833 ,  H01L29/0649 ,  H01L29/6659

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and an isolation structure in the semiconductor substrate and surrounding an active region of the semiconductor substrate. The semiconductor device also includes a gate over the semiconductor substrate, and the gate has an intermediate portion over the active region and two end portions connected to the intermediate portion, and the end portions are over the isolation structure. The semiconductor device further includes a support film over the isolation structure and covering the isolation structure and at least one of the end portions of the gate. The support film exposes the active region and the intermediate portion of the gate.

Abstract translation: 提供了用于形成半导体器件的机构的实施例。 半导体器件包括半导体衬底和半导体衬底中的隔离结构，并围绕半导体衬底的有源区。 半导体器件还包括半导体衬底上的栅极，并且栅极具有在有源区上方的中间部分和连接到中间部分的两个端部，并且端部在隔离结构上方。 半导体器件还包括隔离结构上的支撑膜，并覆盖隔离结构和栅极的至少一个端部。 支撑膜暴露栅极的有源区域和中间部分。

公开(公告)号：US20200295188A1

公开(公告)日：2020-09-17

申请号：US16892458

申请日：2020-06-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jung-Chi JENG ,  I-Chih CHEN ,  Wen-Chang KUO ,  Ying-Hao CHEN ,  Ru-Shang HSIAO ,  Chih-Mu HUANG

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: A method for forming a semiconductor device is provided. The method includes forming an isolation structure in a semiconductor substrate. The method includes forming a gate over the semiconductor substrate. The method includes forming a support film over the isolation structure. The support film is a continuous film which continuously covers the isolation structure and the gate over the isolation structure, the support film conformally covers a first portion of a top surface and a second portion of a first sidewall of the gate, the top surface faces away from the semiconductor substrate, the support film and a topmost surface of the active region do not overlap with each other, and the topmost surface faces the gate. The method includes after forming the support film, forming lightly doped regions in the semiconductor substrate and at two opposite sides of the gate.

公开(公告)号：US20200035821A1

公开(公告)日：2020-01-30

申请号：US16405057

申请日：2019-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Chun KUAN ,  I-Chih CHEN ,  Chih-Mu HUANG ,  Fu-Tsun TSAI ,  Sheng-Lin HSIEH ,  Kuan-Jung CHEN

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L21/768 ,  H01L21/02

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a source/drain feature in the substrate, protruding from the substrate, and on a sidewall surface of the gate structure. The semiconductor device structure also includes an insulating barrier structure in the substrate and partially covering the bottom and sidewalls of the source/drain feature.

公开(公告)号：US20190165126A1

公开(公告)日：2019-05-30

申请号：US16180623

申请日：2018-11-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Chih CHEN ,  Ru-Shang Hsiao ,  Ching-Pin Lin ,  Chih-Mu Huang ,  Fu-Tsun Tsai

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/423 ,  H01L21/8234

Abstract: A semiconductor device includes: first and second fin structures, disposed on a substrate, that respectively extend in parallel to an axis; a first gate feature that traverses the first fin structure to overlay a central portion of the first fin structure; a second gate feature that traverses the second fin structure to overlay a central portion of the second fin structure; a first spacer comprising: a first portion comprising two layers that respectively extend from sidewalls of the first gate feature toward opposite directions of the axis; and a second portion comprising two layers that respectively extend from sidewalls of the first portion of the first spacer toward the opposite directions of the axis; and a second spacer comprising two layers that respectively extend from sidewalls of the second gate feature toward the opposite directions of the axis.

公开(公告)号：US20180061987A1

公开(公告)日：2018-03-01

申请号：US15804887

申请日：2017-11-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： I-Chih CHEN ,  Ying-Lang WANG ,  Chih-Mu HUANG ,  Ying-Hao CHEN ,  Wen-Chang KUO ,  Jung-Chi JENG

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/167 ,  H01L29/165

Abstract: A method of fabricating a semiconductor device includes following steps. A trench is formed in a substrate. A barrier layer and an epitaxy layer are formed in sequence in the trench. The barrier layer has a first dopant. A source/drain recess cavity is formed by etching at least the epitaxial layer. A source/drain region is formed in the source/drain recess cavity. The source/drain region has a second dopant.

公开(公告)号：US20170338342A1

公开(公告)日：2017-11-23

申请号：US15670978

申请日：2017-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jung-Chi JENG ,  I-Chih CHEN ,  Wen-Chang KUO ,  Ying-Hao CHEN ,  Ru-Shang HSIAO ,  Chih-Mu HUANG

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/7833 ,  H01L29/0649 ,  H01L29/6659

Abstract: A method for forming a semiconductor device is provided. The method includes forming an isolation structure in a semiconductor substrate, and the isolation structure surrounds an active region of the semiconductor substrate. The method also includes forming a gate over the semiconductor substrate, and the gate is across the active region and extends onto the isolation structure. The gate has an intermediate portion over the active region and two end portions connected to the intermediate portion, the end portions are over the isolation structure. The method includes forming a support film over the isolation structure, and the support film is a continuous film which continuously covers the isolation structure and at least one end portion of the gate.

公开(公告)号：US20170317164A1

公开(公告)日：2017-11-02

申请号：US15651751

申请日：2017-07-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： I-Chih CHEN ,  Chih-Mu HUANG ,  Fu-Tsun TSAI ,  Meng-Yi WU ,  Yung-Fa LEE ,  Ying-Lang WANG

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L21/265

CPC classification number: H01L29/0638 ,  H01L21/26506 ,  H01L29/0603 ,  H01L29/0847 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type region including a first conductivity type impurity. A first gate structure is on the semiconductor substrate overlying the first conductivity type region. A second conductivity type region including a second conductivity type impurity is formed in the semiconductor substrate. A barrier layer is located between the first conductivity type region and the second conductivity type region. The barrier layer prevents diffusion of the second conductivity type impurity from the second conductivity type region into the first conductivity type region.