公开(公告)号：US20200035821A1

公开(公告)日：2020-01-30

申请号：US16405057

申请日：2019-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Chun KUAN ,  I-Chih CHEN ,  Chih-Mu HUANG ,  Fu-Tsun TSAI ,  Sheng-Lin HSIEH ,  Kuan-Jung CHEN

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L21/768 ,  H01L21/02

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a source/drain feature in the substrate, protruding from the substrate, and on a sidewall surface of the gate structure. The semiconductor device structure also includes an insulating barrier structure in the substrate and partially covering the bottom and sidewalls of the source/drain feature.