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    CMOS COMPATIBLE BIOFET
    3.
    发明申请
    CMOS COMPATIBLE BIOFET 有权
    CMOS兼容BIOFET

    公开(公告)号：US20160209355A1

    公开(公告)日：2016-07-21

    申请号：US14600315

    申请日：2015-01-20

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Lee-Chuan Tseng ,  Che-Ming Chang ,  Chung-Yen Chou ,  Yuan-Chih Hsieh

    IPC: G01N27/414 ,  G01N33/487

    CPC classification number: G01N27/4145 ,  B82Y35/00 ,  G01N27/414 ,  G01N27/4148 ,  G01N33/48707 ,  G01N33/48785

    Abstract: The present disclosure relates to an integrated chip having an integrated bio-sensor with a sensing well having one or more sensing well spacers that reduce a size of the sensing well after its formation. In some embodiments, the integrated bio-sensor has a sensing device disposed within a semiconductor substrate. A dielectric structure is disposed onto a first side of the semiconductor substrate. The dielectric structure has an opening with a first width, which is exposed to an ambient environment and that overlies the sensing device. One or more sensing well spacers are arranged on sidewalls of the opening. The one or more sensing well spacers expose a bottom surface of the opening to define a sensing well having a second width that is smaller than the first width.

    Abstract translation: 本公开涉及具有集成生物传感器的集成芯片，其具有感测井，其具有一个或多个感测井隔离物，其在其形成之后减小感测井的尺寸。 在一些实施例中，集成生物传感器具有设置在半导体衬底内的感测装置。 电介质结构设置在半导体衬底的第一侧上。 电介质结构具有第一宽度的开口，其暴露于周围环境并且覆盖在感测装置上。 一个或多个感测井隔板布置在开口的侧壁上。 一个或多个感测井隔离件暴露开口的底表面以限定具有小于第一宽度的第二宽度的感测井。

    Robot blade design
    4.
    发明授权
    Robot blade design 有权
    机器人叶片设计

    公开(公告)号：US09434076B2

    公开(公告)日：2016-09-06

    申请号：US13959851

    申请日：2013-08-06

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Lee-Chuan Tseng ,  Chih-Jen Chan ,  Shih-Wei Lin ,  Che-Ming Chang ,  Chung-Yen Chou ,  Yuan-Chih Hsieh

    IPC: B25J11/00 ,  B25J15/00 ,  H01L21/677 ,  H01L21/687

    CPC classification number: B25J11/0095 ,  B25J15/0014 ,  H01L21/67766 ,  H01L21/68707

    Abstract: The present disclosure relates to a wafer transfer robot having a robot blade that can be used to handle substrates that are patterned on both sides without causing warpage of the substrates. In some embodiments, the wafer transfer robot has a robot blade coupled to a transfer arm that varies a position of the robot blade. The robot blade has a wafer reception area that receives a substrate. Two or more spatially distinct contact points are located at positions along a perimeter of the wafer reception area that provide support to opposing edges of the substrate. The two or more contact points are separated by a cavity in the robot blade. The cavity mitigates contact between a backside of the substrate and the robot blade, while providing support to opposing sides of the substrate to prevent warpage of the substrate.

    Abstract translation: 本公开涉及具有机器人刀片的晶片传送机器人，其可以用于处理在两侧上被图案化的基板，而不会引起基板的翘曲。 在一些实施例中，晶片传送机器人具有联接到改变机器人刀片的位置的传送臂的机器人刀片。 机器人刀片具有接收衬底的晶片接收区域。 两个或更多个空间上不同的接触点位于沿着晶片接收区域的周边的位置，该位置为衬底的相对边缘提供支撑。 两个或多个接触点由机器人刀片中的空腔分开。 该腔减轻了衬底的背面与机器人刀片之间的接触，同时为衬底的相对侧提供支撑以防止衬底翘曲。

    Robot Blade Design
    5.
    发明申请
    Robot Blade Design 有权
    机器人刀片设计

    公开(公告)号：US20150044008A1

    公开(公告)日：2015-02-12

    申请号：US13959851

    申请日：2013-08-06

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Lee-Chuan Tseng ,  Chih-Jen Chan ,  Shih-Wei Lin ,  Che-Ming Chang ,  Chung-Yen Chou ,  Yuan-Chih Hsieh

    IPC: B25J11/00 ,  H01L21/683 ,  H01L21/677 ,  B25J15/06

    CPC classification number: B25J11/0095 ,  B25J15/0014 ,  H01L21/67766 ,  H01L21/68707

    Abstract: The present disclosure relates to a wafer transfer robot having a robot blade that can be used to handle substrates that are patterned on both sides without causing warpage of the substrates. In some embodiments, the wafer transfer robot has a robot blade coupled to a transfer arm that varies a position of the robot blade. The robot blade has a wafer reception area that receives a substrate. Two or more spatially distinct contact points are located at positions along a perimeter of the wafer reception area that provide support to opposing edges of the substrate. The two or more contact points are separated by a cavity in the robot blade. The cavity mitigates contact between a backside of the substrate and the robot blade, while providing support to opposing sides of the substrate to prevent warpage of the substrate.

    Abstract translation: 本公开涉及具有机器人刀片的晶片传送机器人，其可以用于处理在两侧上被图案化的基板，而不会引起基板的翘曲。 在一些实施例中，晶片传送机器人具有联接到改变机器人刀片的位置的传送臂的机器人刀片。 机器人刀片具有接收衬底的晶片接收区域。 两个或更多个空间上不同的接触点位于沿着晶片接收区域的周边的位置，该位置为基板的相对边缘提供支撑。 两个或多个接触点由机器人刀片中的空腔分开。 该腔减轻了衬底的背面与机器人刀片之间的接触，同时为衬底的相对侧提供支撑以防止衬底翘曲。

    NOBLE GAS BOMBARDMENT TO REDUCE SCALLOPS IN BOSCH ETCHING
    8.
    发明申请
    NOBLE GAS BOMBARDMENT TO REDUCE SCALLOPS IN BOSCH ETCHING 有权
    NOBLE GAS BOMBARDMENT以减少龙骨蚀刻中的鳞片

    公开(公告)号：US20150069581A1

    公开(公告)日：2015-03-12

    申请号：US14023563

    申请日：2013-09-11

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Che-Ming Chang ,  Lee-Chuan Tseng ,  Shih-Wei Lin ,  Chih-Jen Chan ,  Yuan-Chih Hsieh ,  Ming Chyi Liu ,  Chung-Yen Chou

    IPC: H01L21/265 ,  H01L29/06 ,  H01L29/02 ,  H01L21/3065

    CPC classification number: H01L21/30655 ,  H01L21/2633 ,  H01L21/3065 ,  H01L27/00

    Abstract: A method of etching a trench in a substrate is provided. The method repeatedly alternates between using a fluorine-based plasma to etch a trench, which has trench sidewalls, into a selected region of the substrate; and using a fluorocarbon plasma to deposit a liner on the trench sidewalls. The liner, when formed and subsequently etched, has an exposed sidewall surface that includes scalloped recesses. The trench, which includes the scalloped recesses, is then bombarded with a molecular beam where the molecules are directed on an axis parallel to the trench sidewalls to reduce the scalloped recesses.

    Abstract translation: 提供了蚀刻衬底中的沟槽的方法。 该方法在使用氟基等离子体之间重复地交替，以将具有沟槽侧壁的沟槽蚀刻到衬底的选定区域中; 以及使用氟碳等离子体将衬垫沉积在沟槽侧壁上。 衬里当形成并随后被蚀刻时具有包括扇形凹槽的暴露的侧壁表面。 包括扇形凹槽的沟槽然后用分子束轰击，其中分子被引导在平行于沟槽侧壁的轴上以减少扇形凹部。

    Cup-Like Getter Scheme
    9.
    发明申请
    Cup-Like Getter Scheme 有权
    杯状吸气剂计划

    公开(公告)号：US20150069539A1

    公开(公告)日：2015-03-12

    申请号：US14023572

    申请日：2013-09-11

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Jen Chan ,  Lee-Chuan Tseng ,  Shih-Wei Lin ,  Che-Ming Chang ,  Chung-Yen Chou ,  Yuan-Chih Hsieh

    IPC: B81C1/00 ,  B81B7/00 ,  H01L21/322

    CPC classification number: B81C1/00285 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/015 ,  B81C2203/0118 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by increasing an area in which a getter layer is deposited, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having one or more residual gases. A cavity is formed within a top surface of the substrate. The cavity has a bottom surface and sidewalls extending from the bottom surface to the top surface. A getter layer, which absorbs the one or more residual gases, is deposited over the substrate at a position extending from the bottom surface of the cavity to a location on the sidewalls. By depositing the getter layer to extend to a location on the sidewalls of the cavity, the area of the substrate that is able to absorb the one or more residual gases is increased.

    Abstract translation: 本公开涉及一种通过增加其中沉积吸气剂层的区域和相关联的装置来提供高效吸气过程的吸气方法。 在一些实施例中，通过将衬底提供到具有一个或多个残余气体的处理室中来执行该方法。 在衬底的顶表面内形成空腔。 空腔具有底表面和从底表面延伸到顶表面的侧壁。 吸收一种或多种残余气体的吸气剂层在从腔的底表面延伸到侧壁上的位置的位置上沉积在衬底上。 通过沉积吸气剂层以延伸到腔的侧壁上的位置，能够吸收一种或多种残留气体的衬底的面积增加。

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