公开(公告)号：US20160334782A1

公开(公告)日：2016-11-17

申请号：US15219467

申请日：2016-07-26

申请人： Tokyo Electron Limited

发明人： Aaron Archer Waterman ,  Yuichiro Morozumi ,  Tetsushi Ozaki ,  Sanjeev Kaushal ,  Sukesh Janubhai Patel

IPC分类号： G05B19/418 ,  G06F17/30 ,  G06N99/00 ,  H01L21/67

CPC分类号： G05B19/41875 ,  G05B2219/31336 ,  G05B2219/32368 ,  G05B2219/37224 ,  G06F17/3053 ,  G06N99/005 ,  H01L21/67288

摘要： A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.

摘要翻译： 提供了一种用于在半导体制造期间自主追踪颗粒污染原因的系统和方法。 污染分析系统分析工具过程日志以及多个过程运行的颗粒污染数据，以确定系统性颗粒污染水平与一个或多个工具参数之间的关系。 这种关系用于预测与工具的常规使用相关的预期污染水平，并确定哪些工具参数对颗粒污染的预期水平具有最大的影响。 污染分析系统还识别显示出超出预期污染水平的意外偏差颗粒污染水平的过程记录，并追踪特定过程日志参数事件的异常颗粒污染的原因。

公开(公告)号：US09405289B2

公开(公告)日：2016-08-02

申请号：US13706712

申请日：2012-12-06

申请人： Tokyo Electron Limited

发明人： Aaron Archer Waterman ,  Yuichiro Morozumi ,  Tetsushi Ozaki ,  Sanjeev Kaushal ,  Sukesh Janubhai Patel

IPC分类号： G06F17/40 ,  G05B19/418 ,  H01L21/67 ,  G06N99/00

CPC分类号： G05B19/41875 ,  G05B2219/31336 ,  G05B2219/32368 ,  G05B2219/37224 ,  G06F17/3053 ,  G06N99/005 ,  H01L21/67288

摘要： A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.

摘要翻译： 提供了一种用于在半导体制造期间自主追踪颗粒污染原因的系统和方法。 污染分析系统分析工具过程日志以及多个过程运行的颗粒污染数据，以确定系统性颗粒污染水平与一个或多个工具参数之间的关系。 这种关系用于预测与工具的常规使用相关的预期污染水平，并确定哪些工具参数对颗粒污染的预期水平具有最大的影响。 污染分析系统还识别显示出超出预期污染水平的意外偏差颗粒污染水平的过程记录，并追踪特定过程日志参数事件的异常颗粒污染的原因。

公开(公告)号：US09390912B2

公开(公告)日：2016-07-12

申请号：US14167650

申请日：2014-01-29

申请人： TOKYO ELECTRON LIMITED

发明人： Hiroki Murakami ,  Koji Sasaki ,  Keisuke Suzuki ,  Yuichiro Morozumi

IPC分类号： C23C16/36 ,  C23C16/40 ,  H01L21/02 ,  C23C16/455 ,  C23C16/30

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/45544 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02219

摘要： A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more.

摘要翻译： 一种用于在可抽空处理容器内的工件表面上形成由至少含有硅（Si），氧（O），碳（C）和氮（N）的SiOCN层构成的薄膜的成膜方法， 硅烷类气体，烃类气体，氮化气体或氧化性气体，包括形成至少包含Si，C和N的第一膜，形成至少包含Si，C和O的第二膜。形成第一膜和 形成第二膜被设置为循环，并且循环执行一次或多次。

公开(公告)号：US09293543B2

公开(公告)日：2016-03-22

申请号：US14044119

申请日：2013-10-02

申请人： TOKYO ELECTRON LIMITED ,  OSAKA UNIVERSITY

发明人： Shuji Azumo ,  Yusaku Kashiwagi ,  Yuichiro Morozumi ,  Yu Wamura ,  Katsushige Harada ,  Kosuke Takahashi ,  Heiji Watanabe ,  Takayoshi Shimura ,  Takuji Hosoi

IPC分类号： H01L21/283 ,  H01L21/441 ,  H01L29/51 ,  H01L29/40 ,  H01L21/04 ,  H01L21/28 ,  H01L21/02 ,  C23C16/30 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/401 ,  C23C16/303 ,  C23C16/308 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/044 ,  H01L21/049 ,  H01L21/28264 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66045 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7813

摘要： Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

摘要翻译： 提供一种形成用于功率器件的MOSFET的栅极绝缘膜的方法。 在晶片W的SiC衬底上形成AlN膜，然后重复形成AlO膜并在AlO膜上形成AlN膜，从而形成具有层叠结构的AlON膜，其中AlO膜和 AlN膜交替层压。 对具有层叠结构的AlON膜进行热处理。

公开(公告)号：US10133265B2

公开(公告)日：2018-11-20

申请号：US15219467

申请日：2016-07-26

申请人： Tokyo Electron Limited

发明人： Aaron Archer Waterman ,  Yuichiro Morozumi ,  Tetsushi Ozaki ,  Sanjeev Kaushal ,  Sukesh Janubhai Patel

IPC分类号： G05B19/41 ,  G05B19/418 ,  H01L21/67 ,  G06N99/00 ,  G06F17/30

摘要： A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.

公开(公告)号：US20140163712A1

公开(公告)日：2014-06-12

申请号：US13706712

申请日：2012-12-06

申请人： TOKYO ELECTRON LIMITED

发明人： Aaron Archer Waterman ,  Yuichiro Morozumi ,  Tetsushi Ozaki ,  Sanjeev Kaushal ,  Sukesh Janubhai Patel

IPC分类号： G06F17/40

CPC分类号： G05B19/41875 ,  G05B2219/31336 ,  G05B2219/32368 ,  G05B2219/37224 ,  G06F17/3053 ,  G06N99/005 ,  H01L21/67288

摘要： A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.

摘要翻译： 提供了一种用于在半导体制造期间自主追踪颗粒污染原因的系统和方法。 污染分析系统分析工具过程日志以及多个过程运行的颗粒污染数据，以确定系统性颗粒污染水平与一个或多个工具参数之间的关系。 这种关系用于预测与工具的常规使用相关的预期污染水平，并确定哪些工具参数对颗粒污染的预期水平具有最大的影响。 污染分析系统还识别显示出超出预期污染水平的意外偏差颗粒污染水平的过程记录，并追踪特定过程日志参数事件的异常颗粒污染的原因。

公开(公告)号：US09472394B2

公开(公告)日：2016-10-18

申请号：US14154341

申请日：2014-01-14

申请人： TOKYO ELECTRON LIMITED

发明人： Hiroki Murakami ,  Toshiyuki Ikeuchi ,  Jun Sato ,  Yuichiro Morozumi

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/321 ,  H01L21/677

CPC分类号： H01L21/02238 ,  H01L21/02164 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/32105 ,  H01L21/67757

摘要： A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed.

摘要翻译： 形成氧化硅膜的方法包括在基底上形成硅膜，将基底作为被处理物的被处理面，通过氧化硅膜在基底上形成氧化硅膜。 在形成硅膜和形成氧化硅膜之间，进行将其上形成有硅膜的被处理物暴露于至少含有氧化成分的气氛。