公开(公告)号：US20160334782A1

公开(公告)日：2016-11-17

申请号：US15219467

申请日：2016-07-26

申请人： Tokyo Electron Limited

发明人： Aaron Archer Waterman ,  Yuichiro Morozumi ,  Tetsushi Ozaki ,  Sanjeev Kaushal ,  Sukesh Janubhai Patel

IPC分类号： G05B19/418 ,  G06F17/30 ,  G06N99/00 ,  H01L21/67

CPC分类号： G05B19/41875 ,  G05B2219/31336 ,  G05B2219/32368 ,  G05B2219/37224 ,  G06F17/3053 ,  G06N99/005 ,  H01L21/67288

摘要： A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.

摘要翻译： 提供了一种用于在半导体制造期间自主追踪颗粒污染原因的系统和方法。 污染分析系统分析工具过程日志以及多个过程运行的颗粒污染数据，以确定系统性颗粒污染水平与一个或多个工具参数之间的关系。 这种关系用于预测与工具的常规使用相关的预期污染水平，并确定哪些工具参数对颗粒污染的预期水平具有最大的影响。 污染分析系统还识别显示出超出预期污染水平的意外偏差颗粒污染水平的过程记录，并追踪特定过程日志参数事件的异常颗粒污染的原因。

公开(公告)号：US09405289B2

公开(公告)日：2016-08-02

申请号：US13706712

申请日：2012-12-06

申请人： Tokyo Electron Limited

发明人： Aaron Archer Waterman ,  Yuichiro Morozumi ,  Tetsushi Ozaki ,  Sanjeev Kaushal ,  Sukesh Janubhai Patel

IPC分类号： G06F17/40 ,  G05B19/418 ,  H01L21/67 ,  G06N99/00

CPC分类号： G05B19/41875 ,  G05B2219/31336 ,  G05B2219/32368 ,  G05B2219/37224 ,  G06F17/3053 ,  G06N99/005 ,  H01L21/67288

摘要： A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.

摘要翻译： 提供了一种用于在半导体制造期间自主追踪颗粒污染原因的系统和方法。 污染分析系统分析工具过程日志以及多个过程运行的颗粒污染数据，以确定系统性颗粒污染水平与一个或多个工具参数之间的关系。 这种关系用于预测与工具的常规使用相关的预期污染水平，并确定哪些工具参数对颗粒污染的预期水平具有最大的影响。 污染分析系统还识别显示出超出预期污染水平的意外偏差颗粒污染水平的过程记录，并追踪特定过程日志参数事件的异常颗粒污染的原因。

公开(公告)号：US10571900B2

公开(公告)日：2020-02-25

申请号：US15666765

申请日：2017-08-02

申请人： Tokyo Electron Limited

发明人： Sanjeev Kaushal ,  Sukesh Janubhai Patel ,  Wolfgang Polak ,  Aaron Archer Waterman ,  Orion Wolfe

IPC分类号： G05B19/418 ,  G06N20/00

摘要： A system and method autonomously determines the impact of respective tool parameters on tool performance in a semiconductor manufacturing system. A parameter impact identification system receives tool parameter and tool performance data for one or more process runs of the semiconductor fabrication system and generates a separate function for each tool parameter characterizing the behavior of a tool performance indicator in terms of a single one of the tool parameters. Each function is then scored according to how well the function predicts the actual behavior of the tool performance indicator, or based on a determined sensitivity of the tool performance indicator to changes in the single tool parameter. The tool parameters are then ranked based on these scores, and a reduced set of critical tool parameters is derived based on the ranking. The tool performance indicator can then be modeled based on this reduced set of tool parameters.

公开(公告)号：US20170329318A1

公开(公告)日：2017-11-16

申请号：US15666765

申请日：2017-08-02

申请人： Tokyo Electron Limited

发明人： Sanjeev Kaushal ,  Sukesh Janubhai Patel ,  Wolfgang Polak ,  Aaron Archer Waterman ,  Orion Wolfe

IPC分类号： G05B19/418

CPC分类号： G05B19/41875 ,  G05B2219/32187 ,  G05B2219/45031 ,  G06N20/00 ,  Y02P90/22 ,  Y02P90/86

摘要： A system and method autonomously determines the impact of respective tool parameters on tool performance in a semiconductor manufacturing system. A parameter impact identification system receives tool parameter and tool performance data for one or more process runs of the semiconductor fabrication system and generates a separate function for each tool parameter characterizing the behavior of a tool performance indicator in terms of a single one of the tool parameters. Each function is then scored according to how well the function predicts the actual behavior of the tool performance indicator, or based on a determined sensitivity of the tool performance indicator to changes in the single tool parameter. The tool parameters are then ranked based on these scores, and a reduced set of critical tool parameters is derived based on the ranking. The tool performance indicator can then be modeled based on this reduced set of tool parameters.

公开(公告)号：US09746849B2

公开(公告)日：2017-08-29

申请号：US13673306

申请日：2012-11-09

申请人： Tokyo Electron Limited

发明人： Sanjeev Kaushal ,  Sukesh Janubhai Patel ,  Wolfgang Polak ,  Aaron Archer Waterman ,  Orion Wolfe

IPC分类号： G05B19/418 ,  G06N99/00

CPC分类号： G05B19/41875 ,  G05B2219/32187 ,  G05B2219/45031 ,  G06N99/005 ,  Y02P90/22 ,  Y02P90/86

摘要： A system and method autonomously determines the impact of respective tool parameters on tool performance in a semiconductor manufacturing system. A parameter impact identification system receives tool parameter and performance data for one or more process runs of the semiconductor fabrication system and generates a separate function for each tool parameter characterizing the behavior of a tool performance indicator in terms of a single one of the tool parameters. Each function is then scored according to how well the function predicts the behavior of the tool performance indicator, or based on a determined sensitivity of the tool performance indicator to changes in the single tool parameter. The tool parameters are then ranked based on these scores, and a reduced set of critical tool parameters is derived based on the ranking. The tool performance indicator can then be modeled based on this reduced set of tool parameters.

公开(公告)号：US10133265B2

公开(公告)日：2018-11-20

申请号：US15219467

申请日：2016-07-26

申请人： Tokyo Electron Limited

发明人： Aaron Archer Waterman ,  Yuichiro Morozumi ,  Tetsushi Ozaki ,  Sanjeev Kaushal ,  Sukesh Janubhai Patel

IPC分类号： G05B19/41 ,  G05B19/418 ,  H01L21/67 ,  G06N99/00 ,  G06F17/30

摘要： A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.

公开(公告)号：US20140163712A1

公开(公告)日：2014-06-12

申请号：US13706712

申请日：2012-12-06

申请人： TOKYO ELECTRON LIMITED

发明人： Aaron Archer Waterman ,  Yuichiro Morozumi ,  Tetsushi Ozaki ,  Sanjeev Kaushal ,  Sukesh Janubhai Patel

IPC分类号： G06F17/40

CPC分类号： G05B19/41875 ,  G05B2219/31336 ,  G05B2219/32368 ,  G05B2219/37224 ,  G06F17/3053 ,  G06N99/005 ,  H01L21/67288

摘要： A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.

摘要翻译： 提供了一种用于在半导体制造期间自主追踪颗粒污染原因的系统和方法。 污染分析系统分析工具过程日志以及多个过程运行的颗粒污染数据，以确定系统性颗粒污染水平与一个或多个工具参数之间的关系。 这种关系用于预测与工具的常规使用相关的预期污染水平，并确定哪些工具参数对颗粒污染的预期水平具有最大的影响。 污染分析系统还识别显示出超出预期污染水平的意外偏差颗粒污染水平的过程记录，并追踪特定过程日志参数事件的异常颗粒污染的原因。

公开(公告)号：US20140135970A1

公开(公告)日：2014-05-15

申请号：US13673306

申请日：2012-11-09

申请人： TOKYO ELECTRON LIMITED

发明人： Sanjeev Kaushal ,  Sukesh Janubhai Patel ,  Wolfgang Polak ,  Aaron Archer Waterman ,  Orion Wolfe

IPC分类号： G05B15/00

CPC分类号： G05B19/41875 ,  G05B2219/32187 ,  G05B2219/45031 ,  G06N99/005 ,  Y02P90/22 ,  Y02P90/86

摘要： A system and method for autonomously determining the impact of respective tool parameters on tool performance in a semiconductor manufacturing system is provided. A parameter impact identification system receives tool parameter and tool performance data for one or more process runs of the semiconductor fabrication system and generates a separate function for each tool parameter characterizing the behavior of a tool performance indicator in terms of a single one of the tool parameters. Each function is then scored according to how well the function predicts the actual behavior of the tool performance indicator, or based on a determined sensitivity of the tool performance indicator to changes in the single tool parameter. The tool parameters are then ranked based on these scores, and a reduced set of critical tool parameters is derived based on the ranking. The tool performance indicator can then be modeled based on this reduced set of tool parameters.

摘要翻译： 提供了一种用于在半导体制造系统中自主确定各个刀具参数对刀具性能的影响的系统和方法。 参数冲击识别系统接收半导体制造系统的一个或多个过程运行的工具参数和工具性能数据，并且根据单个工具参数为每个刀具参数生成表征刀具性能指标行为的单独功能 。 然后根据功能预测刀具性能指标的实际行为，或者根据刀具性能指标对单刀具参数变化的确定灵敏度对每个功能进行刻痕。 然后根据这些分数对工具参数进行排名，并根据排名得出一组关键工具参数。 然后，可以基于这组减少的刀具参数来建模刀具性能指标。