公开(公告)号：US12018370B2

公开(公告)日：2024-06-25

申请号：US17756213

申请日：2020-10-28

申请人： Tokyo Electron Limited

发明人： Tatsuhiko Tanimura ,  Toru Kanazawa ,  Toshiyuki Ikeuchi

IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C16/44

CPC分类号： C23C16/45529 ,  C23C16/402 ,  C23C16/405 ,  C23C16/4408

摘要： A film-forming method includes: forming a first film by performing an operation of forming a unit film a plurality of times, the operation including sub-step of supplying a first raw material gas containing a first element to a substrate and causing the first raw material gas to be adsorbed thereon, and sub-step of supplying a first reaction gas to the substrate; and forming a second film on the substrate by performing an operation of forming a unit film at least once, the operation including sub-step of supplying a second raw material gas containing a second element to the substrate and causing the second raw material gas to be adsorbed thereon, and sub-step of supplying a second reaction gas to the substrate, wherein a mixed film is formed by performing the forming the first film and the forming the second film, respectively once, or a plurality of times.

公开(公告)号：US09472393B2

公开(公告)日：2016-10-18

申请号：US14623160

申请日：2015-02-16

申请人： TOKYO ELECTRON LIMITED

发明人： Toshiyuki Ikeuchi ,  Akira Shimizu

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/40

CPC分类号： H01L21/02164 ,  C23C16/402 ,  C23C16/45534 ,  H01L21/02211 ,  H01L21/0228

摘要： A silicon oxide film forming method includes: forming an amorphous silicon film, including: adsorbing an adsorbate containing silicon to a workpiece by supplying a source gas containing chlorine and silicon into a reaction chamber accommodating the workpiece, activating the source gas, and reacting the activated source gas with the workpiece; and removing chlorine contained in the adsorbate by supplying hydrogen gas into the reaction chamber and activating the hydrogen gas, and reacting the activated hydrogen gas with the adsorbate, wherein removing the chlorine is performed after adsorbing the adsorbate is performed, thereby forming the amorphous silicon film on the workpiece; and forming a silicon oxide film on the workpiece by supplying an oxidizing gas into the reaction chamber and oxidizing the amorphous silicon film, wherein forming the amorphous silicon film and forming the silicon oxide film are repeated in this order plural times.

摘要翻译： 氧化硅膜形成方法包括：形成非晶硅膜，其包括：通过将含氯和硅的源气体供应到容纳所述工件的反应室中，将含有硅的吸附物吸附到工件上，活化所述源气体，并使所述活化的 源气与工件; 通过向反应室内供给氢气，使氢气活化，并使活性氢气与被吸附物质反应而除去被吸附物中含有的氯，其中，在吸附了吸附物质后，进行氯的除去，从而形成非晶硅膜 在工件上; 并且通过向反应室中供给氧化气体并氧化非晶硅膜，在工件上形成氧化硅膜，其中形成非晶硅膜并形成氧化硅膜多次重复。

公开(公告)号：US09472394B2

公开(公告)日：2016-10-18

申请号：US14154341

申请日：2014-01-14

申请人： TOKYO ELECTRON LIMITED

发明人： Hiroki Murakami ,  Toshiyuki Ikeuchi ,  Jun Sato ,  Yuichiro Morozumi

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/321 ,  H01L21/677

CPC分类号： H01L21/02238 ,  H01L21/02164 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/32105 ,  H01L21/67757

摘要： A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed.

摘要翻译： 形成氧化硅膜的方法包括在基底上形成硅膜，将基底作为被处理物的被处理面，通过氧化硅膜在基底上形成氧化硅膜。 在形成硅膜和形成氧化硅膜之间，进行将其上形成有硅膜的被处理物暴露于至少含有氧化成分的气氛。