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    THROUGH TRENCH ISOLATION FOR DIE
    2.
    发明申请
    THROUGH TRENCH ISOLATION FOR DIE 有权

    公开(公告)号：US20220384252A1

    公开(公告)日：2022-12-01

    申请号：US17710139

    申请日：2022-03-31

    申请人： TEXAS INSTRUMENTS INCORPORATED

    发明人： Scott Robert Summerfelt ,  Benjamin Stassen Cook ,  Sebastian Meier

    IPC分类号： H01L21/762

    摘要： A device includes a die with a protective overcoat and a substrate, the substrate comprising a first region and a second region that are spaced apart. The device also includes an isolation dielectric between the protective overcoat and the die. A pre-metal dielectric (PMD) barrier is between the isolation dielectric and the substrate, the PMD barrier having a first region that contacts the first region of the substrate and a second region that contacts the second region of the substrate, the first region and the second region of the PMD barrier being spaced apart. A through trench filled with a polymer dielectric extends between the first region and the second region of the substrate, and between the first region and the second region of the PMD barrier to contact the isolation dielectric.

    ISFET Biosensor
    3.
    发明申请
    ISFET Biosensor 有权

    公开(公告)号：US20220065811A1

    公开(公告)日：2022-03-03

    申请号：US17461975

    申请日：2021-08-30

    申请人： Texas Instruments Incorporated

    发明人： Sebastian Meier

    IPC分类号： G01N27/414 ,  G01N27/02 ,  G01N1/38

    摘要： In described examples, a biosensor device has a porous membrane with a test region that contains a test analyte. A sensor die has an ion sensing field effect transistor (ISFET) with an ion sensitive gate element located in an active sensor surface of the sensor die. The active sensor surface is in contact with the porous membrane test region. A controller is coupled to the ISFET and an interface module is coupled to the controller to provide a human readable test result.

    PATTERNING PLATINUM BY ALLOYING AND ETCHING PLATINUM ALLOY
    4.
    发明申请
    PATTERNING PLATINUM BY ALLOYING AND ETCHING PLATINUM ALLOY 有权

    公开(公告)号：US20210242029A1

    公开(公告)日：2021-08-05

    申请号：US17234833

    申请日：2021-04-20

    申请人： Texas Instruments Incorporated

    发明人： Sebastian Meier ,  Helmut Rinck

    IPC分类号： H01L21/306 ,  H01L21/308 ,  C23F1/44 ,  C23F1/30 ,  H01L21/24

    摘要： There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

    DRY ETCH PROCESS LANDING ON METAL OXIDE ETCH STOP LAYER OVER METAL LAYER AND STRUCTURE FORMED THEREBY
    5.
    发明申请
    DRY ETCH PROCESS LANDING ON METAL OXIDE ETCH STOP LAYER OVER METAL LAYER AND STRUCTURE FORMED THEREBY 审中-公开

    公开(公告)号：US20200303202A1

    公开(公告)日：2020-09-24

    申请号：US16897357

    申请日：2020-06-10

    申请人： Texas Instruments Incorporated

    发明人： Sebastian Meier ,  Michael Hans Enzelberger-Heim ,  Reiner Port

    IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/3205 ,  H01L23/00 ,  G01N27/414

    摘要： A microelectronic device includes a metal layer on a first dielectric layer. An etch stop layer is disposed over the metal layer and on the dielectric layer directly adjacent to the metal layer. The etch stop layer includes a metal oxide, and is less than 10 nanometers thick. A second dielectric layer is disposed over the etch stop layer. The second dielectric layer is removed from an etched region which extends down to the etch stop layer. The etched region extends at least partially over the metal layer. In one version of the microelectronic device, the etch stop layer may extend over the metal layer in the etched region. In another version, the etch stop layer may be removed in the etched region. The microelectronic device is formed by etching the second dielectric layer using a plasma etch process, stopping on the etch stop layer.

    DRY ETCH PROCESS LANDING ON METAL OXIDE ETCH STOP LAYER OVER METAL LAYER AND STRUCTURE FORMED THEREBY
    6.
    发明申请
    DRY ETCH PROCESS LANDING ON METAL OXIDE ETCH STOP LAYER OVER METAL LAYER AND STRUCTURE FORMED THEREBY 审中-公开

    公开(公告)号：US20190304796A1

    公开(公告)日：2019-10-03

    申请号：US15936434

    申请日：2018-03-27

    申请人： Texas Instruments Incorporated

    发明人： Sebastian Meier ,  Michael Hans Enzelberger-Heim ,  Reiner Port

    IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/3205 ,  H01L23/00 ,  G01N27/414

    摘要： A microelectronic device includes a metal layer on a first dielectric layer. An etch stop layer is disposed over the metal layer and on the dielectric layer directly adjacent to the metal layer. The etch stop layer includes a metal oxide, and is less than 10 nanometers thick. A second dielectric layer is disposed over the etch stop layer. The second dielectric layer is removed from an etched region which extends down to the etch stop layer. The etched region extends at least partially over the metal layer. In one version of the microelectronic device, the etch stop layer may extend over the metal layer in the etched region. In another version, the etch stop layer may be removed in the etched region. The microelectronic device is formed by etching the second dielectric layer using a plasma etch process, stopping on the etch stop layer.