公开(公告)号：US12284804B2

公开(公告)日：2025-04-22

申请号：US18404849

申请日：2024-01-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Perng-Fei Yuh ,  Yih Wang ,  Meng-Sheng Chang ,  Jui-Che Tsai ,  Ku-Feng Lin ,  Yu-Wei Lin ,  Keh-Jeng Chang ,  Chansyun David Yang ,  Shao-Ting Wu ,  Shao-Yu Chou ,  Philex Ming-Yan Fan ,  Yoshitaka Yamauchi ,  Tzu-Hsien Yang

IPC: G11C17/16 ,  G11C17/18 ,  H10B20/25

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

公开(公告)号：US11605728B2

公开(公告)日：2023-03-14

申请号：US17504104

申请日：2021-10-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Han-Yu Lin ,  Chansyun David Yang ,  Fang-Wei Lee ,  Tze-Chung Lin ,  Li-Te Lin ,  Pinyen Lin

IPC: H01L29/66 ,  H01L29/165 ,  H01L21/02 ,  H01L21/768 ,  H01L21/311 ,  H01L29/78 ,  H01L21/321 ,  H01L29/06

Abstract: A semiconductor device structure is provided. The semiconductor device includes a first nanowire structure over a second nanowire structure, a gate stack wrapping around the first nanowire structure and the second nanowire structure, a source/drain feature adjoining the first nanowire structure and the second nanowire structure, a gate spacer layer over the first nanowire structure and between the gate stack and the source/drain feature, and an inner spacer layer between the first nanowire structure and the second nanowire structure and between the gate stack and the source/drain feature. The gate spacer layer has a first carbon concentration, the inner spacer has a second carbon concentration, and the second carbon concentration is lower than the first carbon concentration.

公开(公告)号：US20240290836A1

公开(公告)日：2024-08-29

申请号：US18650905

申请日：2024-04-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chansyun David Yang ,  Keh-Jeng Chang ,  Chan-Lon Yang ,  Perng-Fei Yuh

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0673 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a stack of nanostructured channel regions disposed on a fin structure, a first gate structure disposed within the stack of nanostructured channel regions, a second gate structure surrounds the first gate structure about a first axis and surrounds the nanostructured channel regions about a second axis different from the first axis, and first and second contact structures disposed on the first and second gate structures, respectively.

公开(公告)号：US11973129B2

公开(公告)日：2024-04-30

申请号：US18182774

申请日：2023-03-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Han-Yu Lin ,  Chansyun David Yang ,  Fang-Wei Lee ,  Tze-Chung Lin ,  Li-Te Lin ,  Pinyen Lin

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/165 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/6681 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/31116 ,  H01L21/32105 ,  H01L21/3211 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823468 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78696

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device includes forming nanowire structures stacked over a substrate and spaced apart from one another, and forming a dielectric material surrounding the nanowire structures. The dielectric material has a first nitrogen concentration. The method also includes treating the dielectric material to form a treated portion. The treated portion of the dielectric material has a second nitrogen concentration that is greater than the first nitrogen concentration. The method also includes removing the treating portion of the dielectric material, thereby remaining an untreated portion of the dielectric material as inner spacer layers; and forming the gate stack surrounding nanowire structures and between the inner spacer layers.

公开(公告)号：US11960210B2

公开(公告)日：2024-04-16

申请号：US18114805

申请日：2023-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chansyun David Yang ,  Keh-Jeng Chang ,  Chan-Lon Yang

IPC: G03F7/00

CPC classification number: G03F7/70033 ,  G03F7/702

Abstract: A method for generating an extreme ultraviolet (EUV) radiation includes simultaneously irradiating two or more target droplets with laser light in an EUV radiation source apparatus to produce EUV radiation and collecting and directing the EUV radiation produced from the two or more target droplet by an imaging mirror.

公开(公告)号：US11903188B2

公开(公告)日：2024-02-13

申请号：US17673126

申请日：2022-02-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Perng-Fei Yuh ,  Yih Wang ,  Meng-Sheng Chang ,  Jui-Che Tsai ,  Ku-Feng Lin ,  Yu-Wei Lin ,  Keh-Jeng Chang ,  Chansyun David Yang ,  Shao-Ting Wu ,  Shao-Yu Chou ,  Philex Ming-Yan Fan ,  Yoshitaka Yamauchi ,  Tzu-Hsien Yang

IPC: G11C17/16 ,  H10B20/20 ,  G11C17/18

CPC classification number: H10B20/20 ,  G11C17/16 ,  G11C17/18

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

公开(公告)号：US11592749B2

公开(公告)日：2023-02-28

申请号：US17504210

申请日：2021-10-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chansyun David Yang ,  Keh-Jeng Chang ,  Chan-Lon Yang

IPC: G03F7/00 ,  G03F7/20

Abstract: A method for generating an extreme ultraviolet (EUV) radiation includes simultaneously irradiating two or more target droplets with laser light in an EUV radiation source apparatus to produce EUV radiation and collecting and directing the EUV radiation produced from the two or more target droplet by an imaging mirror.