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公开(公告)号：US10312118B2
公开(公告)日：2019-06-04
申请号：US14157271
申请日：2014-01-16
发明人： Pei-Shan Wu , Yi-Ting Hu , Ming-Tan Lee , Yu-Lin Wang , Yuh-Sen Chang , Pin-Yi Shin , Wen-Ming Chen , Wei-Chih Chen , Chih-Yuan Chiu
IPC分类号： H01L21/67 , H01L21/683 , H01L21/50
摘要： A bonding apparatus includes a wafer stage, a first chip stage, a first chip transporting device, a second stage and a second chip transporting device. The wafer stage is used for holding a wafer. The first chip stage is used for holding at least one first chip. The first chip transporting device is used for transporting the first chip from the first chip stage onto the wafer. The second chip stage is used for holding at least one second chip. The second chip transporting device is used for transporting the second chip from the second chip stage onto the wafer.
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公开(公告)号：US11000923B2
公开(公告)日：2021-05-11
申请号：US15800034
申请日：2017-10-31
发明人： Shih-Yen Chen , Tzi-Yi Shieh , Yuh-Sen Chang , Chung-Li Lee
IPC分类号： B23K37/04 , H01L21/00 , H05K3/00 , H01L23/00 , B23K1/00 , B23K3/08 , H01L21/67 , H01L21/687 , H05K3/34
摘要： A tool and a method of reflow are provided. In various embodiments, the tool includes a chamber unit, a wafer lifting system, a heater, and an exhausting unit. The wafer lifting system is disposed in the chamber unit. The heater is coupled to the chamber unit, and configured to heat the wafer. The exhausting unit coupled to the chamber unit, and configured to exhaust gas in the chamber unit. The wafer lifting system is configured to receive and move the wafer in the chamber unit, and to provide a vertical distance between the heater and the wafer in the chamber unit.
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公开(公告)号：US09761468B2
公开(公告)日：2017-09-12
申请号：US14182021
申请日：2014-02-17
发明人： Yuh-Sen Chang , Shang-Hsien Lin , Chih-Yang Chan , Szu-Hsien Lee , Chia-Haw Yeh
CPC分类号： H01L21/67132 , H01L21/67092 , Y10T156/108 , Y10T156/1343 , Y10T156/1705
摘要： In accordance with some embodiments, a wafer taping device is provided. The wafer taping device includes a tape delivering along a first direction. The wafer taping device also includes a wafer mount unit disposed below the tape. The wafer mount unit has an upper surface for supporting a wafer and having a notch for allowing a cut mark of the wafer to align with it. The notch is staggered with a second direction in the upper surface, and the second direction is substantially perpendicular to the first direction. In addition, the wafer taping device includes a laminating roller disposed above the wafer mount unit and having a long axis elongated in the second direction. The laminating roller is configured to reciprocate along the first direction for pressing the tape to the wafer.
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公开(公告)号：US20180301430A1
公开(公告)日：2018-10-18
申请号：US15489954
申请日：2017-04-18
发明人： Chien-Hung Kuo , Chin-Yu Ku , Yuh-Sen Chang , Hon-Lin Huang , Sheng-Yu Wu , Ching-Hui Chen , Mirng-Ji LII
IPC分类号： H01L23/00
CPC分类号： H01L24/14 , H01L24/03 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/0603 , H01L2224/13082 , H01L2224/1403
摘要： A semiconductor structure includes an interconnect structure, at least one first metal pad, at least one second metal pad, at least one first bump, at least one second bump, at least one photosensitive material, and a bonding layer. The first metal pad and the second metal pad are disposed on and electrically connected to the interconnect structure. The first bump is disposed on the first metal pad. The second bump is disposed on the second metal pad. The photosensitive material is disposed on the first bump. The bonding layer is in contact with the photosensitive material and the second bump. The photosensitive material is disposed between the first bump and the bonding layer.
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公开(公告)号：US09808891B2
公开(公告)日：2017-11-07
申请号：US14156881
申请日：2014-01-16
发明人： Shih-Yen Chen , Tzi-Yi Shieh , Yuh-Sen Chang , Chung-Li Lee
IPC分类号： B23K37/00 , H01L21/67 , B23K37/04 , H01L23/00 , B23K1/00 , B23K3/08 , H01L21/687 , H05K3/00 , H05K3/34
CPC分类号： B23K37/04 , B23K1/0016 , B23K3/08 , H01L21/67109 , H01L21/67115 , H01L21/68742 , H01L24/11 , H01L24/742 , H01L24/95 , H01L2224/1181 , H01L2224/11849 , H01L2224/13101 , H01L2224/81191 , H05K3/0008 , H05K3/3494 , H05K2203/081 , H05K2203/087 , H01L2924/014 , H01L2924/00014
摘要： A tool and a method of reflow are provided. In various embodiments, the tool includes a chamber unit, a wafer lifting system, a heater, and an exhausting unit. The wafer lifting system is disposed in the chamber unit. The heater is coupled to the chamber unit, and configured to heat the wafer. The exhausting unit coupled to the chamber unit, and configured to exhaust gas in the chamber unit. The wafer lifting system is configured to receive and move the wafer in the chamber unit, and to provide a vertical distance between the heater and the wafer in the chamber unit.
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公开(公告)号：US20150201502A1
公开(公告)日：2015-07-16
申请号：US14156881
申请日：2014-01-16
发明人： Shih-Yen Chen , Tzi-Yi Shieh , Yuh-Sen Chang , Chung-Li Lee
CPC分类号： B23K37/04 , B23K1/0016 , B23K3/08 , H01L21/67109 , H01L21/67115 , H01L21/68742 , H01L24/11 , H01L24/742 , H01L24/95 , H01L2224/1181 , H01L2224/11849 , H01L2224/13101 , H01L2224/81191 , H05K3/0008 , H05K3/3494 , H05K2203/081 , H05K2203/087 , H01L2924/014 , H01L2924/00014
摘要： A tool and a method of reflow are provided. In various embodiments, the tool includes a chamber unit, a wafer lifting system, a heater, and an exhausting unit. The wafer lifting system is disposed in the chamber unit. The heater is coupled to the chamber unit, and configured to heat the wafer. The exhausting unit coupled to the chamber unit, and configured to exhaust gas in the chamber unit. The wafer lifting system is configured to receive and move the wafer in the chamber unit, and to provide a vertical distance between the heater and the wafer in the chamber unit
摘要翻译： 提供了一种工具和回流方法。 在各种实施例中，该工具包括室单元，晶片提升系统，加热器和排气单元。 晶片提升系统设置在室单元中。 加热器耦合到室单元，并且被配置为加热晶片。 排气单元联接到室单元，并且被配置为在室单元中排气。 晶片提升系统被配置为接收和移动室单元中的晶片，并且在室单元中提供加热器和晶片之间的垂直距离
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公开(公告)号：US20240234481A1
公开(公告)日：2024-07-11
申请号：US18150912
申请日：2023-01-06
发明人： Szu-Shu Yang , Chun Yi Wu , Kai Tzeng , Yuh-Sen Chang , Chi-Cheng Chen , Chi-Chun Peng
IPC分类号： H01L27/08
CPC分类号： H01L28/10
摘要： A method of forming a semiconductor device, the method including forming a first insulation layer over a substrate, depositing a first stack of magnetic layers over the first insulation layer, etching the first stack of magnetic layers such that a sidewall of the first stack of magnetic layers forms a stairstep pattern, forming a first photosensitive layer over the first stack of magnetic layers, the first insulation layer, and the substrate, wherein a thickness of the first photosensitive layer above a center of a first step of the stairstep pattern is different from a thickness of the first photosensitive layer above a center of a second step of the stairstep pattern, forming a first conductive feature over the first photosensitive layer, depositing a second insulation layer over the first photosensitive layer and the first conductive feature, and depositing a second magnetic layer over the second insulation layer.
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公开(公告)号：US10163842B2
公开(公告)日：2018-12-25
申请号：US15489954
申请日：2017-04-18
发明人： Chien-Hung Kuo , Chin-Yu Ku , Yuh-Sen Chang , Hon-Lin Huang , Sheng-Yu Wu , Ching-Hui Chen , Mirng-Ji Lii
摘要： A semiconductor structure includes an interconnect structure, at least one first metal pad, at least one second metal pad, at least one first bump, at least one second bump, at least one photosensitive material, and a bonding layer. The first metal pad and the second metal pad are disposed on and electrically connected to the interconnect structure. The first bump is disposed on the first metal pad. The second bump is disposed on the second metal pad. The photosensitive material is disposed on the first bump. The bonding layer is in contact with the photosensitive material and the second bump. The photosensitive material is disposed between the first bump and the bonding layer.
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