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公开(公告)号：US20190091829A1
公开(公告)日：2019-03-28
申请号：US15994088
申请日：2018-05-31
发明人： Cheng-Ping Chen , Ren-Dou Lee , Sheng-Tai Peng , Tsung-Lung Lai , Tzi-Yi Shieh , Chien-Wei Chang
IPC分类号： B24B37/32 , H01L21/321 , B24B37/015 , B24B37/20
摘要： In some embodiments, the present disclosure, in some embodiments, relates to a method of forming a CMP membrane. The method is performed by providing a malleable material within a cavity within a membrane mold. The cavity has a central region and a peripheral region surrounding the central region. The malleable material within the cavity is cured to form a membrane. Curing the malleable material is performed by heating the malleable material within the central region of the membrane mold to a first temperature and heating the malleable material within the peripheral region of the membrane mold to a second temperature that is greater than the first temperature.
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公开(公告)号：US11000923B2
公开(公告)日：2021-05-11
申请号：US15800034
申请日：2017-10-31
发明人： Shih-Yen Chen , Tzi-Yi Shieh , Yuh-Sen Chang , Chung-Li Lee
IPC分类号： B23K37/04 , H01L21/00 , H05K3/00 , H01L23/00 , B23K1/00 , B23K3/08 , H01L21/67 , H01L21/687 , H05K3/34
摘要： A tool and a method of reflow are provided. In various embodiments, the tool includes a chamber unit, a wafer lifting system, a heater, and an exhausting unit. The wafer lifting system is disposed in the chamber unit. The heater is coupled to the chamber unit, and configured to heat the wafer. The exhausting unit coupled to the chamber unit, and configured to exhaust gas in the chamber unit. The wafer lifting system is configured to receive and move the wafer in the chamber unit, and to provide a vertical distance between the heater and the wafer in the chamber unit.
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公开(公告)号：US09808891B2
公开(公告)日：2017-11-07
申请号：US14156881
申请日：2014-01-16
发明人： Shih-Yen Chen , Tzi-Yi Shieh , Yuh-Sen Chang , Chung-Li Lee
IPC分类号： B23K37/00 , H01L21/67 , B23K37/04 , H01L23/00 , B23K1/00 , B23K3/08 , H01L21/687 , H05K3/00 , H05K3/34
CPC分类号： B23K37/04 , B23K1/0016 , B23K3/08 , H01L21/67109 , H01L21/67115 , H01L21/68742 , H01L24/11 , H01L24/742 , H01L24/95 , H01L2224/1181 , H01L2224/11849 , H01L2224/13101 , H01L2224/81191 , H05K3/0008 , H05K3/3494 , H05K2203/081 , H05K2203/087 , H01L2924/014 , H01L2924/00014
摘要： A tool and a method of reflow are provided. In various embodiments, the tool includes a chamber unit, a wafer lifting system, a heater, and an exhausting unit. The wafer lifting system is disposed in the chamber unit. The heater is coupled to the chamber unit, and configured to heat the wafer. The exhausting unit coupled to the chamber unit, and configured to exhaust gas in the chamber unit. The wafer lifting system is configured to receive and move the wafer in the chamber unit, and to provide a vertical distance between the heater and the wafer in the chamber unit.
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公开(公告)号：US20150201502A1
公开(公告)日：2015-07-16
申请号：US14156881
申请日：2014-01-16
发明人： Shih-Yen Chen , Tzi-Yi Shieh , Yuh-Sen Chang , Chung-Li Lee
CPC分类号： B23K37/04 , B23K1/0016 , B23K3/08 , H01L21/67109 , H01L21/67115 , H01L21/68742 , H01L24/11 , H01L24/742 , H01L24/95 , H01L2224/1181 , H01L2224/11849 , H01L2224/13101 , H01L2224/81191 , H05K3/0008 , H05K3/3494 , H05K2203/081 , H05K2203/087 , H01L2924/014 , H01L2924/00014
摘要： A tool and a method of reflow are provided. In various embodiments, the tool includes a chamber unit, a wafer lifting system, a heater, and an exhausting unit. The wafer lifting system is disposed in the chamber unit. The heater is coupled to the chamber unit, and configured to heat the wafer. The exhausting unit coupled to the chamber unit, and configured to exhaust gas in the chamber unit. The wafer lifting system is configured to receive and move the wafer in the chamber unit, and to provide a vertical distance between the heater and the wafer in the chamber unit
摘要翻译： 提供了一种工具和回流方法。 在各种实施例中，该工具包括室单元，晶片提升系统，加热器和排气单元。 晶片提升系统设置在室单元中。 加热器耦合到室单元，并且被配置为加热晶片。 排气单元联接到室单元，并且被配置为在室单元中排气。 晶片提升系统被配置为接收和移动室单元中的晶片，并且在室单元中提供加热器和晶片之间的垂直距离
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公开(公告)号：US11984324B2
公开(公告)日：2024-05-14
申请号：US17162923
申请日：2021-01-29
发明人： Yu-Chen Wei , Feng-Inn Wu , Tzi-Yi Shieh
IPC分类号： H01L21/321 , H01L21/306 , H01L21/8234
CPC分类号： H01L21/3212 , H01L21/30625 , H01L21/823431
摘要： In a method of manufacturing a semiconductor device, a sacrificial gate structure is formed over a substrate. The sacrificial gate structure includes a sacrificial gate electrode. A first dielectric layer is formed over the sacrificial gate structure. A second dielectric layer is formed over the first dielectric layer. The second and first dielectric layers are planarized and recessed, and an upper portion of the sacrificial gate structure is exposed while a lower portion of the sacrificial gate structure is embedded in the first dielectric layer. A third dielectric layer is formed over the exposed sacrificial gate structure and over the first dielectric layer. A fourth dielectric layer is formed over the third dielectric layer. The fourth and third dielectric layers are planarized, and the sacrificial gate electrode is exposed and part of the third dielectric layer remains on the recessed first dielectric layer. The sacrificial gate electrode is removed.
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公开(公告)号：US11267099B2
公开(公告)日：2022-03-08
申请号：US15994088
申请日：2018-05-31
发明人： Cheng-Ping Chen , Ren-Dou Lee , Sheng-Tai Peng , Tsung-Lung Lai , Tzi-Yi Shieh , Chien-Wei Chang
IPC分类号： B24B37/32 , B24B37/20 , B24B37/015 , H01L21/321
摘要： In some embodiments, the present disclosure, in some embodiments, relates to a method of forming a CMP membrane. The method is performed by providing a malleable material within a cavity within a membrane mold. The cavity has a central region and a peripheral region surrounding the central region. The malleable material within the cavity is cured to form a membrane. Curing the malleable material is performed by heating the malleable material within the central region of the membrane mold to a first temperature and heating the malleable material within the peripheral region of the membrane mold to a second temperature that is greater than the first temperature.
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