公开(公告)号：US20250062274A1

公开(公告)日：2025-02-20

申请号：US18451982

申请日：2023-08-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jen-Hao Liu ,  Amram Eitan ,  Chih-Yuan Chiu ,  Chi-Chun Peng ,  Yu-Hong Du

IPC: H01L23/00

Abstract: A bonding apparatus with a bonding head having vacuum channels and switchable channels, and the method of forming the same are provided. The bonding apparatus may include a vacuum pump, a blower, a controller communicatively coupled to the vacuum pump and the blower, and a bonding head. The bonding head may include a main body, a first vacuum channel in the main body, wherein the first vacuum channel is connected to the vacuum pump, and a first switchable channel in the main body, wherein the first switchable channel is connected to the vacuum pump and the blower.

公开(公告)号：US20240234481A1

公开(公告)日：2024-07-11

申请号：US18150912

申请日：2023-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Shu Yang ,  Chun Yi Wu ,  Kai Tzeng ,  Yuh-Sen Chang ,  Chi-Cheng Chen ,  Chi-Chun Peng

IPC: H01L27/08

CPC classification number: H01L28/10

Abstract: A method of forming a semiconductor device, the method including forming a first insulation layer over a substrate, depositing a first stack of magnetic layers over the first insulation layer, etching the first stack of magnetic layers such that a sidewall of the first stack of magnetic layers forms a stairstep pattern, forming a first photosensitive layer over the first stack of magnetic layers, the first insulation layer, and the substrate, wherein a thickness of the first photosensitive layer above a center of a first step of the stairstep pattern is different from a thickness of the first photosensitive layer above a center of a second step of the stairstep pattern, forming a first conductive feature over the first photosensitive layer, depositing a second insulation layer over the first photosensitive layer and the first conductive feature, and depositing a second magnetic layer over the second insulation layer.