Semiconductor device and method of forming a thermally reinforced semiconductor die
    5.
    发明授权
    Semiconductor device and method of forming a thermally reinforced semiconductor die 有权
    半导体器件和形成热增强半导体管芯的方法

    公开(公告)号:US08786076B2

    公开(公告)日:2014-07-22

    申请号:US13052588

    申请日:2011-03-21

    IPC分类号: H01L23/34 H01L23/367

    摘要: A semiconductor device includes a substrate with conductive traces. A semiconductor die is mounted with an active surface oriented toward the substrate. An underfill material is deposited between the semiconductor die and substrate. A recess is formed in an interior portion of the semiconductor die that extends from a back surface of the semiconductor die opposite the active surface partially through the semiconductor die such that a peripheral portion of the back surface of the semiconductor die is offset with respect to a depth of the recess. A thermal interface material (TIM) is deposited over the semiconductor die and into the recess such that the TIM in the recess is laterally supported by the peripheral portion of the semiconductor die to reduce flow of the TIM away from the semiconductor die. A heat spreader including protrusions is mounted over the semiconductor die and contacts the TIM.

    摘要翻译: 半导体器件包括具有导电迹线的衬底。 半导体管芯安装有朝向衬底的有源表面。 在半导体管芯和衬底之间沉积底部填充材料。 在半导体管芯的内部形成凹部,该半导体管芯的内部从半导体管芯的与有源表面相对的背面部分地延伸穿过半导体管芯,使得半导体管芯的背面的周边部分相对于 凹槽的深度。 热界面材料(TIM)沉积在半导体管芯上并进入凹槽中,使得凹槽中的TIM由半导体管芯的周边部分横向支撑,以减少TIM远离半导体管芯的流动。 包括突起的散热器安装在半导体管芯上并接触TIM。

    Semiconductor Device and Method of Forming a Thermally Reinforced Semiconductor Die
    6.
    发明申请
    Semiconductor Device and Method of Forming a Thermally Reinforced Semiconductor Die 有权
    半导体器件和形成热增强半导体管芯的方法

    公开(公告)号:US20120241941A1

    公开(公告)日:2012-09-27

    申请号:US13052588

    申请日:2011-03-21

    IPC分类号: H01L23/34 H01L21/461

    摘要: A semiconductor device includes a substrate with conductive traces. A semiconductor die is mounted with an active surface oriented toward the substrate. An underfill material is deposited between the semiconductor die and substrate. A recess is formed in an interior portion of the semiconductor die that extends from a back surface of the semiconductor die opposite the active surface partially through the semiconductor die such that a peripheral portion of the back surface of the semiconductor die is offset with respect to a depth of the recess. A thermal interface material (TIM) is deposited over the semiconductor die and into the recess such that the TIM in the recess is laterally supported by the peripheral portion of the semiconductor die to reduce flow of the TIM away from the semiconductor die. A heat spreader including protrusions is mounted over the semiconductor die and contacts the TIM.

    摘要翻译: 半导体器件包括具有导电迹线的衬底。 半导体管芯安装有朝向衬底的有源表面。 在半导体管芯和衬底之间沉积底部填充材料。 在半导体管芯的内部形成凹部,该半导体管芯的内部从半导体管芯的与有源表面相对的背面部分地延伸穿过半导体管芯,使得半导体管芯的背面的周边部分相对于 凹槽的深度。 热界面材料(TIM)沉积在半导体管芯上并进入凹槽中,使得凹槽中的TIM由半导体管芯的周边部分横向支撑,以减少TIM远离半导体管芯的流动。 包括突起的散热器安装在半导体管芯上并接触TIM。