公开(公告)号：US20100148316A1

公开(公告)日：2010-06-17

申请号：US12332835

申请日：2008-12-11

申请人： Sun Mi Kim ,  OhHan Kim ,  KyungHoon Lee

发明人： Sun Mi Kim ,  OhHan Kim ,  KyungHoon Lee

IPC分类号： H01L23/538 ,  H01L21/58

CPC分类号： H01L23/49833 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/25 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/96 ,  H01L25/03 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/24195 ,  H01L2224/2518 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83805 ,  H01L2224/85411 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/1005 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/13111 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor device has a core semiconductor device with a through silicon via (TSV). The core semiconductor device includes a plurality of stacked semiconductor die and semiconductor component. An insulating layer is formed around the core semiconductor device. A conductive via is formed through the insulating layer. A first interconnect structure is formed over a first side of the core semiconductor device. The first interconnect structure is electrically connected to the TSV. A second interconnect structure is formed over a second side of the core semiconductor device. The second interconnect structure is electrically connected to the TSV. The first and second interconnect structures include a plurality of conductive layers separated by insulating layers. A semiconductor die is mounted to the first interconnect structure. The semiconductor die is electrically connected to the core semiconductor device through the first and second interconnect structures and TSV.

摘要翻译： 半导体器件具有带有硅通孔（TSV）的核心半导体器件。 核心半导体器件包括多个堆叠的半导体管芯和半导体部件。 在芯半导体器件周围形成绝缘层。 通过绝缘层形成导电通孔。 在芯半导体器件的第一侧上形成第一互连结构。 第一互连结构电连接到TSV。 在芯半导体器件的第二侧上形成第二互连结构。 第二互连结构电连接到TSV。 第一和第二互连结构包括由绝缘层分开的多个导电层。 半导体管芯安装到第一互连结构。 半导体管芯通过第一和第二互连结构和TSV电连接到芯半导体器件。

公开(公告)号：US08900921B2

公开(公告)日：2014-12-02

申请号：US12332835

申请日：2008-12-11

申请人： Sun Mi Kim ,  OhHan Kim ,  KyungHoon Lee

发明人： Sun Mi Kim ,  OhHan Kim ,  KyungHoon Lee

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L25/10 ,  H01L25/065 ,  H01L25/03 ,  H01L23/538 ,  H01L21/683 ,  H01L25/00 ,  H01L25/16 ,  H01L23/498 ,  H01L23/48 ,  H01L23/50

CPC分类号： H01L23/49833 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/25 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/96 ,  H01L25/03 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/24195 ,  H01L2224/2518 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83805 ,  H01L2224/85411 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/1005 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/13111 ,  H01L2924/0665 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor device has a core semiconductor device with a through silicon via (TSV). The core semiconductor device includes a plurality of stacked semiconductor die and semiconductor component. An insulating layer is formed around the core semiconductor device. A conductive via is formed through the insulating layer. A first interconnect structure is formed over a first side of the core semiconductor device. The first interconnect structure is electrically connected to the TSV. A second interconnect structure is formed over a second side of the core semiconductor device. The second interconnect structure is electrically connected to the TSV. The first and second interconnect structures include a plurality of conductive layers separated by insulating layers. A semiconductor die is mounted to the first interconnect structure. The semiconductor die is electrically connected to the core semiconductor device through the first and second interconnect structures and TSV.

摘要翻译： 半导体器件具有带有硅通孔（TSV）的核心半导体器件。 核心半导体器件包括多个堆叠的半导体管芯和半导体部件。 在芯半导体器件周围形成绝缘层。 通过绝缘层形成导电通孔。 在芯半导体器件的第一侧上形成第一互连结构。 第一互连结构电连接到TSV。 在芯半导体器件的第二侧上形成第二互连结构。 第二互连结构电连接到TSV。 第一和第二互连结构包括由绝缘层分开的多个导电层。 半导体管芯安装到第一互连结构。 半导体管芯通过第一和第二互连结构和TSV电连接到芯半导体器件。

公开(公告)号：US09293349B2

公开(公告)日：2016-03-22

申请号：US13569088

申请日：2012-08-07

申请人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

发明人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

IPC分类号： H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/552 ,  H01L23/00

CPC分类号： H01L23/60 ,  H01L21/561 ,  H01L21/563 ,  H01L23/29 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/552 ,  H01L24/97 ,  H01L2224/05026 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor device includes a multi-layer substrate. A ground shield is disposed between layers of the substrate and electrically connected to a ground point. A plurality of semiconductor die is mounted to the substrate over the ground shield. The ground shield extends beyond a footprint of the plurality of semiconductor die. An encapsulant is formed over the plurality of semiconductor die and substrate. Dicing channels are formed in the encapsulant, between the plurality of semiconductor die, and over the ground shield. A plurality of metal-filled holes is formed along the dicing channels, and extends into the substrate and through the ground shield. A top shield is formed over the plurality of semiconductor die and electrically and mechanically connects to the ground shield through the metal-filled holes. The top and ground shields are configured to block electromagnetic interference generated with respect to an integrated passive device disposed in the semiconductor die.

摘要翻译： 半导体器件包括多层衬底。 接地屏蔽层设置在基板的层之间并且电连接到接地点。 多个半导体管芯通过接地屏蔽件安装到衬底上。 接地护罩延伸超过多个半导体管芯的覆盖区。 在多个半导体管芯和衬底上形成密封剂。 切割通道形成在密封剂中，在多个半导体管芯之间，并在接地屏蔽层之上。 沿着切割通道形成多个金属填充的孔，并延伸到基板中并通过接地屏蔽。 在多个半导体管芯上形成顶部屏蔽，并通过金属填充的孔电连接和机械地连接到接地屏蔽层。 顶部和接地屏蔽被配置为阻止相对于设置在半导体管芯中的集成无源器件产生的电磁干扰。

公开(公告)号：US20120292751A1

公开(公告)日：2012-11-22

申请号：US13569088

申请日：2012-08-07

申请人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

发明人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

IPC分类号： H01L21/56 ,  H01L23/552

CPC分类号： H01L23/60 ,  H01L21/561 ,  H01L21/563 ,  H01L23/29 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/552 ,  H01L24/97 ,  H01L2224/05026 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor device includes a multi-layer substrate. A ground shield is disposed between layers of the substrate and electrically connected to a ground point. A plurality of semiconductor die is mounted to the substrate over the ground shield. The ground shield extends beyond a footprint of the plurality of semiconductor die. An encapsulant is formed over the plurality of semiconductor die and substrate. Dicing channels are formed in the encapsulant, between the plurality of semiconductor die, and over the ground shield. A plurality of metal-filled holes is formed along the dicing channels, and extends into the substrate and through the ground shield. A top shield is formed over the plurality of semiconductor die and electrically and mechanically connects to the ground shield through the metal-filled holes. The top and ground shields are configured to block electromagnetic interference generated with respect to an integrated passive device disposed in the semiconductor die.

摘要翻译： 半导体器件包括多层衬底。 接地屏蔽层设置在基板的层之间并且电连接到接地点。 多个半导体管芯通过接地屏蔽件安装到衬底上。 接地护罩延伸超过多个半导体管芯的覆盖区。 在多个半导体管芯和衬底上形成密封剂。 切割通道形成在密封剂中，在多个半导体管芯之间，并在接地屏蔽层之上。 沿着切割通道形成多个金属填充的孔，并延伸到基板中并通过接地屏蔽。 在多个半导体管芯上形成顶部屏蔽，并通过金属填充的孔电连接和机械地连接到接地屏蔽层。 顶部和接地屏蔽被配置为阻止相对于设置在半导体管芯中的集成无源器件产生的电磁干扰。

公开(公告)号：US08786076B2

公开(公告)日：2014-07-22

申请号：US13052588

申请日：2011-03-21

申请人： OhHan Kim ,  YongHee Kang ,  KyungHoon Lee

发明人： OhHan Kim ,  YongHee Kang ,  KyungHoon Lee

IPC分类号： H01L23/34 ,  H01L23/367

CPC分类号： H01L23/367 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/01322 ,  H01L2924/10158 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate with conductive traces. A semiconductor die is mounted with an active surface oriented toward the substrate. An underfill material is deposited between the semiconductor die and substrate. A recess is formed in an interior portion of the semiconductor die that extends from a back surface of the semiconductor die opposite the active surface partially through the semiconductor die such that a peripheral portion of the back surface of the semiconductor die is offset with respect to a depth of the recess. A thermal interface material (TIM) is deposited over the semiconductor die and into the recess such that the TIM in the recess is laterally supported by the peripheral portion of the semiconductor die to reduce flow of the TIM away from the semiconductor die. A heat spreader including protrusions is mounted over the semiconductor die and contacts the TIM.

摘要翻译： 半导体器件包括具有导电迹线的衬底。 半导体管芯安装有朝向衬底的有源表面。 在半导体管芯和衬底之间沉积底部填充材料。 在半导体管芯的内部形成凹部，该半导体管芯的内部从半导体管芯的与有源表面相对的背面部分地延伸穿过半导体管芯，使得半导体管芯的背面的周边部分相对于 凹槽的深度。 热界面材料（TIM）沉积在半导体管芯上并进入凹槽中，使得凹槽中的TIM由半导体管芯的周边部分横向支撑，以减少TIM远离半导体管芯的流动。 包括突起的散热器安装在半导体管芯上并接触TIM。

公开(公告)号：US20120241941A1

公开(公告)日：2012-09-27

申请号：US13052588

申请日：2011-03-21

申请人： OhHan Kim ,  YongHee Kang ,  KyungHoon Lee

发明人： OhHan Kim ,  YongHee Kang ,  KyungHoon Lee

IPC分类号： H01L23/34 ,  H01L21/461

CPC分类号： H01L23/367 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/01322 ,  H01L2924/10158 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2924/19105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate with conductive traces. A semiconductor die is mounted with an active surface oriented toward the substrate. An underfill material is deposited between the semiconductor die and substrate. A recess is formed in an interior portion of the semiconductor die that extends from a back surface of the semiconductor die opposite the active surface partially through the semiconductor die such that a peripheral portion of the back surface of the semiconductor die is offset with respect to a depth of the recess. A thermal interface material (TIM) is deposited over the semiconductor die and into the recess such that the TIM in the recess is laterally supported by the peripheral portion of the semiconductor die to reduce flow of the TIM away from the semiconductor die. A heat spreader including protrusions is mounted over the semiconductor die and contacts the TIM.

摘要翻译： 半导体器件包括具有导电迹线的衬底。 半导体管芯安装有朝向衬底的有源表面。 在半导体管芯和衬底之间沉积底部填充材料。 在半导体管芯的内部形成凹部，该半导体管芯的内部从半导体管芯的与有源表面相对的背面部分地延伸穿过半导体管芯，使得半导体管芯的背面的周边部分相对于 凹槽的深度。 热界面材料（TIM）沉积在半导体管芯上并进入凹槽中，使得凹槽中的TIM由半导体管芯的周边部分横向支撑，以减少TIM远离半导体管芯的流动。 包括突起的散热器安装在半导体管芯上并接触TIM。

公开(公告)号：US20110121432A1

公开(公告)日：2011-05-26

申请号：US13019541

申请日：2011-02-02

申请人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

发明人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

IPC分类号： H01L23/544 ,  H01L23/552

CPC分类号： H01L23/60 ,  H01L21/561 ,  H01L21/563 ,  H01L23/29 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/552 ,  H01L24/97 ,  H01L2224/05026 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor device includes a multi-layer substrate. A ground shield is disposed between layers of the substrate and electrically connected to a ground point. A plurality of semiconductor die is mounted to the substrate over the ground shield. The ground shield extends beyond a footprint of the plurality of semiconductor die. An encapsulant is formed over the plurality of semiconductor die and substrate. Dicing channels are formed in the encapsulant, between the plurality of semiconductor die, and over the ground shield. A plurality of metal-filled holes is formed along the dicing channels, and extends into the substrate and through the ground shield. A top shield is formed over the plurality of semiconductor die and electrically and mechanically connects to the ground shield through the metal-filled holes. The top and ground shields are configured to block electromagnetic interference generated with respect to an integrated passive device disposed in the semiconductor die.

摘要翻译： 半导体器件包括多层衬底。 接地屏蔽层设置在基板的层之间并且电连接到接地点。 多个半导体管芯通过接地屏蔽件安装到衬底上。 接地护罩延伸超过多个半导体管芯的覆盖区。 在多个半导体管芯和衬底上形成密封剂。 切割通道形成在密封剂中，在多个半导体管芯之间，并在接地屏蔽层之上。 沿着切割通道形成多个金属填充的孔，并延伸到基板中并通过接地屏蔽。 在多个半导体管芯上形成顶部屏蔽，并通过金属填充的孔电连接和机械地连接到接地屏蔽层。 顶部和接地屏蔽被配置为阻止相对于设置在半导体管芯中的集成无源器件产生的电磁干扰。

公开(公告)号：US08264059B2

公开(公告)日：2012-09-11

申请号：US13019541

申请日：2011-02-02

申请人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

发明人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

IPC分类号： H01L29/72

CPC分类号： H01L23/60 ,  H01L21/561 ,  H01L21/563 ,  H01L23/29 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/552 ,  H01L24/97 ,  H01L2224/05026 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor device includes a multi-layer substrate. A ground shield is disposed between layers of the substrate and electrically connected to a ground point. A plurality of semiconductor die is mounted to the substrate over the ground shield. The ground shield extends beyond a footprint of the plurality of semiconductor die. An encapsulant is formed over the plurality of semiconductor die and substrate. Dicing channels are formed in the encapsulant, between the plurality of semiconductor die, and over the ground shield. A plurality of metal-filled holes is formed along the dicing channels, and extends into the substrate and through the ground shield. A top shield is formed over the plurality of semiconductor die and electrically and mechanically connects to the ground shield through the metal-filled holes. The top and ground shields are configured to block electromagnetic interference generated with respect to an integrated passive device disposed in the semiconductor die.

摘要翻译： 半导体器件包括多层衬底。 接地屏蔽层设置在基板的层之间并且电连接到接地点。 多个半导体管芯通过接地屏蔽件安装到衬底上。 接地护罩延伸超过多个半导体管芯的覆盖区。 在多个半导体管芯和衬底上形成密封剂。 切割通道形成在密封剂中，在多个半导体管芯之间，并在接地屏蔽层之上。 沿着切割通道形成多个金属填充的孔，并延伸到基板中并通过接地屏蔽。 在多个半导体管芯上形成顶部屏蔽，并通过金属填充的孔电连接和机械地连接到接地屏蔽层。 顶部和接地屏蔽被配置为阻止相对于设置在半导体管芯中的集成无源器件产生的电磁干扰。

公开(公告)号：US07906371B2

公开(公告)日：2011-03-15

申请号：US12128116

申请日：2008-05-28

申请人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

发明人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

IPC分类号： H01L29/72

CPC分类号： H01L23/60 ,  H01L21/561 ,  H01L21/563 ,  H01L23/29 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/552 ,  H01L24/97 ,  H01L2224/05026 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599

摘要： A shielded semiconductor device is made by embedding a ground shield between layers of a substrate. Semiconductor die are mounted to the substrate over the ground shields. An encapsulant is formed over the semiconductor die and substrate. The encapsulant is diced to form dicing channels between the semiconductor die. A plurality of openings is drilled into the substrate along the dicing channels down through the ground shield on each side of the semiconductor die. A top shield is formed over the semiconductor die. The openings in the substrate are filled with a shielding material to electrically and mechanically connect the top shield to the ground shield. The substrate is singulated to separate the semiconductor die with top shield and ground shield into individual semiconductor devices. IPDs in the semiconductor die generate electromagnetic interference which is blocked by the respective top shield and ground shield.

摘要翻译： 通过在基板的层之间嵌入接地屏蔽来制造屏蔽半导体器件。 半导体管芯通过接地屏蔽件安装到基板上。 在半导体管芯和衬底上形成密封剂。 切割密封剂以在半导体管芯之间形成切割通道。 多个开口沿着切割通道沿着切割通道向下穿过半导体管芯的每一侧上的接地屏蔽。 顶部屏蔽形成在半导体管芯上。 衬底中的开口填充有屏蔽材料以将顶部屏蔽件电气和机械地连接到接地屏蔽。 将衬底分离以将具有顶部屏蔽和接地屏蔽的半导体管芯分离成单独的半导体器件。 半导体芯片中的IPD产生被相应的顶部屏蔽和接地屏蔽阻挡的电磁干扰。

公开(公告)号：US20090294928A1

公开(公告)日：2009-12-03

申请号：US12128116

申请日：2008-05-28

申请人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

发明人： OhHan Kim ,  SunMi Kim ,  KyungHoon Lee

IPC分类号： H01L23/552 ,  H01L21/56

CPC分类号： H01L23/60 ,  H01L21/561 ,  H01L21/563 ,  H01L23/29 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/552 ,  H01L24/97 ,  H01L2224/05026 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599

摘要： A shielded semiconductor device is made by embedding a ground shield between layers of a substrate. Semiconductor die are mounted to the substrate over the ground shields. An encapsulant is formed over the semiconductor die and substrate. The encapsulant is diced to form dicing channels between the semiconductor die. A plurality of openings is drilled into the substrate along the dicing channels down through the ground shield on each side of the semiconductor die. A top shield is formed over the semiconductor die. The openings in the substrate are filled with a shielding material to electrically and mechanically connect the top shield to the ground shield. The substrate is singulated to separate the semiconductor die with top shield and ground shield into individual semiconductor devices. IPDs in the semiconductor die generate electromagnetic interference which is blocked by the respective top shield and ground shield.

摘要翻译： 通过在基板的层之间嵌入接地屏蔽来制造屏蔽半导体器件。 半导体管芯通过接地屏蔽件安装到基板上。 在半导体管芯和衬底上形成密封剂。 切割密封剂以在半导体管芯之间形成切割通道。 多个开口沿着切割通道沿着切割通道向下穿过半导体管芯的每一侧上的接地屏蔽。 顶部屏蔽形成在半导体管芯上。 衬底中的开口填充有屏蔽材料以将顶部屏蔽件电气和机械地连接到接地屏蔽。 将衬底分离以将具有顶部屏蔽和接地屏蔽的半导体管芯分离成单独的半导体器件。 半导体芯片中的IPD产生被相应的顶部屏蔽和接地屏蔽阻挡的电磁干扰。