Abstract:
A semiconductor device includes a first free layer having a magnetic direction that changes according to a direction and an amount of a first current, a first tunnel insulating layer arranged on the first free layer, a pinned layer, arranged on the first tunnel insulating layer, having a magnetic direction set to a first direction, a second tunnel insulating layer arranged on the pinned layer, and a second free layer, arranged on the second tunnel insulating layer, having a magnetic direction that changes according to a direction and an amount of a second current.
Abstract:
A mobile terminal to control an Electronic Control Unit (ECU) of a vehicle includes a communication unit, a storage unit, and an ECU control unit. The communication unit communicates with the ECU, and the storage unit stores information collected from the ECU and status information collected inside or outside the mobile terminal. The ECU control unit determines a driving environment of the vehicle according to the status information collected, processes the information collected from the ECU, and controls the ECU. A method for controlling a vehicle ECU from a mobile terminal includes determining a driving environment, and remotely controlling the ECU from the mobile terminal based on the driving environment.
Abstract:
A magnetoresistive memory cell includes a magnetic tunnel junction element; and a selection transistor, wherein the selection transistor includes a first conductive type semiconductor layer, a gate electrode formed on the first conductive type semiconductor layer with a gate insulation film interposed between the first conductive type semiconductor layer and the gate electrode, and second conductive type first and second diffusion regions formed in the first conductive type semiconductor such that the first and second diffusion regions are spaced apart from each other. The magnetic tunnel junction element includes a free magnetization layer, a fixed magnetization layer, and a tunnel barrier layer interposed between the free magnetization layer and the fixed magnetization layer, and the free magnetization layer of the magnetic tunnel junction element is electrically connected to any one of the first and second diffusion regions of the selection transistor.
Abstract:
A semiconductor package module includes a circuit board including a board body having a receiving portion and conductive patterns formed on the board body; a semiconductor package received in the receiving portion and having conductive terminals electrically connected to the conductive patterns and an s semiconductor chip electrically connected to the conductive terminals; and a connection member electrically connecting the conductive patterns and the conductive terminals. In the present invention, after a receiving portion having a receiving space is formed in the board body of a circuit board and a semiconductor package is received in the receiving portion, and a connection terminal of the semiconductor package and a conductive pattern of the board body are electrically connected using a connection member, a plurality of semiconductor packages can be stacked in a single circuit board without increasing the thickness thereby significantly improving data storage capacity and data processing speed of the semiconductor package module.
Abstract:
A semiconductor memory device with a variable resistance element includes a plurality of active areas isolated from one another by an isolation layer formed in a substrate, a plurality of word lines crossing over the plurality of active areas, an auxiliary source line disposed between two selected word lines and commonly connected to at least two active areas among the plurality of active areas between the two selected word lines, and a plurality of contact plugs each connected to a corresponding active area.
Abstract:
A semiconductor package includes a semiconductor chip having an upper surface, side surfaces connected with the upper surface, and bonding pads formed on the upper surface. A first insulation layer pattern is formed to cover the upper surface and the side surfaces of the semiconductor chip and expose the bonding pads. Re-distribution lines are placed on the first insulation layer pattern and include first re-distribution line parts and second re-distribution line parts. The first re-distribution line parts have an end connected with the bonding pads and correspond to the upper surface of the semiconductor chip and the second re-distribution line parts extend from the first re-distribution line parts beyond the side surfaces of the semiconductor chip. A second insulation layer pattern is formed over the semiconductor chip and exposes portions of the first re-distribution line parts and the second re-distribution line parts.
Abstract:
A stacked wafer level package includes a first semiconductor chip having a first bonding pad and a second semiconductor chip having a second bonding pad. Both bonding pads of the semiconductor chips face the same direction. The second semiconductor chip is disposed in parallel to the first semiconductor chip. A third semiconductor chip is disposed over the first and second semiconductor chips acting as a supporting substrate. The third semiconductor chip has a third bonding pad that is exposed between the first and the second semiconductor chips upon attachment. Finally, a redistribution structure is electrically connected to the first, second, and third bonding pads.
Abstract:
A stacked semiconductor package and a method for manufacturing the same are presented which exhibit a reduced electrical resistance and an increased junction force. The semiconductor package includes at least two semiconductor chips stacked upon each other. Each semiconductor chip has a plurality of bonding pads formed on upper surfaces and has via-holes. First wiring lines are located on the upper surfaces of the semiconductor chips, on the surfaces of the via-holes, and respectively connected onto their respective bonding pads. Second wiring lines are located on lower surfaces of the semiconductor chips and on the surfaces of the respective via-holes which connect to their respective first wiring lines. The semiconductor chips are stacked so that the first wiring lines on an upper surface of an upwardly positioned semiconductor chip are respectively joined with corresponding second wiring lines formed on a lower surface of a downwardly positioned semiconductor chip.
Abstract:
A leg stretching apparatus can be safely used without a risk of damage, with a simple coupling and can be conveniently installed at a site at which leg stretching is desired to enable efficient leg stretching. The leg stretching apparatus includes a fixing plate in which a first fixing plate, which includes a plurality of coupling grooves, and a second fixing plate, which includes a plurality of coupling protrusions corresponding to the coupling grooves, are detachably configured. A fixing part has one end coupled to the first fixing plate and another end equipped with an adjusting part. An elastic string has one end fixed to the fixing part and another end extending in a longitudinal direction of the fixing part, and opposingly branched with two free end portions behind the first fixing plate. A moving part is installed at the second fixing plate to guide the branching of the elastic string.
Abstract:
A magneto-resistance memory device includes a first pinned layer having a first magnetic polarity regardless of current applied to the first pinned layer, a first tunnel insulating layer arranged on the first pinned layer, a first free layer arranged on the first tunnel insulating layer and having a magnetic polarity that changes in response to current of a first amount, a second pinned layer coupled to the first free layer and having the first magnetic polarity regardless of current applied to the first pinned layer, a second tunnel insulating layer arranged on the second pinned layer, a second free layer arranged on the second tunnel insulating layer and having a magnetic polarity that changes in response to current of a second amount, wherein the second amount is smaller than the first amount, and a connection layer.