公开(公告)号：US20170243856A1

公开(公告)日：2017-08-24

申请号：US15393754

申请日：2016-12-29

申请人： Sang-Sick PARK ,  Geol NAM ,  Tae Hong MIN ,  Jihwan HWANG

发明人： Sang-Sick PARK ,  Geol NAM ,  Tae Hong MIN ,  Jihwan HWANG

IPC分类号： H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/49827 ,  H01L24/17 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13117 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16113 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/9211 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06586 ,  H01L2924/01058 ,  H01L2924/0665 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2224/83 ,  H01L2224/81

摘要： A semiconductor package includes a plurality of semiconductor chips on a substrate. The semiconductor chips include a first semiconductor chip, a second semiconductor chip, and a third semiconductor chip that are sequentially stacked on the substrate. The semiconductor package further includes a plurality of non-conductive layers between the substrate and the first semiconductor chip and between adjacent semiconductor chips among the semiconductor chips. The semiconductor chips include smaller widths as a distance from the substrate increases. Each of the non-conductive layers includes an extension protruding outward from a side surface of an overlying one of the semiconductor chips.

公开(公告)号：US20130149817A1

公开(公告)日：2013-06-13

申请号：US13559141

申请日：2012-07-26

申请人： Chang-Seong JEON ,  Sang-Sick PARK ,  Sang-Wook PARK ,  Teak-Hoon LEE ,  Kwang-Chul CHOI

发明人： Chang-Seong JEON ,  Sang-Sick PARK ,  Sang-Wook PARK ,  Teak-Hoon LEE ,  Kwang-Chul CHOI

IPC分类号： H01L21/762

CPC分类号： H01L21/67144 ,  H01L24/13 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/13101 ,  H01L2224/16145 ,  H01L2224/75822 ,  H01L2224/75823 ,  H01L2224/8117 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/10253 ,  H01L2924/014 ,  H01L2924/00014

摘要： A fabricating method of a semiconductor device may include forming a semiconductor die on a supporting wafer, and picking up the die from the wafer by attaching to the die a transfer unit, the transfer unit including a head unit configured to enable twisting movement, and performing the twisting movement. A fabricating method of a semiconductor device may include forming a first semiconductor device on a supporting wafer; and picking up the first semiconductor device from the wafer, moving the first semiconductor device onto a second semiconductor device, and bonding the first semiconductor device to the second semiconductor device while maintaining the first semiconductor device oriented so that a surface faces upwardly. A fabricating method of a semiconductor device may include forming a first semiconductor device on a supporting wafer, attaching to the first semiconductor device a transfer unit configured to enable twisting movement, and performing the twisting movement.

摘要翻译： 半导体器件的制造方法可以包括在支撑晶片上形成半导体管芯，并且通过将转移单元附接到管芯而从晶片上拾取管芯，所述转移单元包括构造成能够进行扭转运动的头单元，以及执行 扭转运动。 半导体器件的制造方法可以包括在支撑晶片上形成第一半导体器件; 以及从所述晶片拾取所述第一半导体器件，将所述第一半导体器件移动到第二半导体器件上，并且将所述第一半导体器件接合到所述第二半导体器件，同时保持所述第一半导体器件定向成使得表面朝上。 半导体器件的制造方法可以包括在支撑晶片上形成第一半导体器件，附接到第一半导体器件，被配置为能够进行扭转运动并执行扭转运动的转移单元。