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公开(公告)号:US10090278B2
公开(公告)日:2018-10-02
申请号:US15393754
申请日:2016-12-29
申请人: Sang-Sick Park , Geol Nam , Tae Hong Min , Jihwan Hwang
发明人: Sang-Sick Park , Geol Nam , Tae Hong Min , Jihwan Hwang
IPC分类号: H01L25/065 , H01L23/31 , H01L23/498 , H01L23/00 , H01L25/00
摘要: A semiconductor package includes a plurality of semiconductor chips on a substrate. The semiconductor chips include a first semiconductor chip, a second semiconductor chip, and a third semiconductor chip that are sequentially stacked on the substrate. The semiconductor package further includes a plurality of non-conductive layers between the substrate and the first semiconductor chip and between adjacent semiconductor chips among the semiconductor chips. The semiconductor chips include smaller widths as a distance from the substrate increases. Each of the non-conductive layers includes an extension protruding outward from a side surface of an overlying one of the semiconductor chips.
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公开(公告)号:US20120280405A1
公开(公告)日:2012-11-08
申请号:US13462518
申请日:2012-05-02
申请人: Jihwan HWANG , Young Kun JEE , Jung-Hwan KIM , Tae Hong MIN , Kwang-chul CHOI
发明人: Jihwan HWANG , Young Kun JEE , Jung-Hwan KIM , Tae Hong MIN , Kwang-chul CHOI
CPC分类号: H01L25/50 , H01L21/56 , H01L21/563 , H01L21/6835 , H01L23/3185 , H01L24/97 , H01L25/0657 , H01L25/18 , H01L2221/68327 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/73204 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06555 , H01L2225/06582 , H01L2924/1431 , H01L2924/1434 , H01L2924/00
摘要: Provided are semiconductor devices and methods of manufacturing the same. The semiconductor package includes a substrate, a first semiconductor chip mounted on the circuit substrate and having a first width, a second semiconductor chip overlying the first semiconductor chip and having a second width greater than the first width, and a first under filler disposed between the first and second semiconductor chips, covering a side surface of the first semiconductor chip and having an inclined side surface.
摘要翻译: 提供半导体器件及其制造方法。 半导体封装包括基板,安装在电路基板上并具有第一宽度的第一半导体芯片,覆盖第一半导体芯片并且具有大于第一宽度的第二宽度的第二半导体芯片,以及设置在第一半导体芯片 第一和第二半导体芯片,覆盖第一半导体芯片的侧表面并具有倾斜的侧表面。
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公开(公告)号:US20170243856A1
公开(公告)日:2017-08-24
申请号:US15393754
申请日:2016-12-29
申请人: Sang-Sick PARK , Geol NAM , Tae Hong MIN , Jihwan HWANG
发明人: Sang-Sick PARK , Geol NAM , Tae Hong MIN , Jihwan HWANG
IPC分类号: H01L25/065 , H01L25/00 , H01L23/00 , H01L23/31 , H01L23/498
CPC分类号: H01L25/0657 , H01L23/3128 , H01L23/49827 , H01L24/17 , H01L24/81 , H01L25/50 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/0557 , H01L2224/06181 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13117 , H01L2224/1312 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16113 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/32145 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81203 , H01L2224/9211 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06548 , H01L2225/06565 , H01L2225/06568 , H01L2225/06586 , H01L2924/01058 , H01L2924/0665 , H01L2924/1434 , H01L2924/15311 , H01L2224/83 , H01L2224/81
摘要: A semiconductor package includes a plurality of semiconductor chips on a substrate. The semiconductor chips include a first semiconductor chip, a second semiconductor chip, and a third semiconductor chip that are sequentially stacked on the substrate. The semiconductor package further includes a plurality of non-conductive layers between the substrate and the first semiconductor chip and between adjacent semiconductor chips among the semiconductor chips. The semiconductor chips include smaller widths as a distance from the substrate increases. Each of the non-conductive layers includes an extension protruding outward from a side surface of an overlying one of the semiconductor chips.
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