Abstract:
An organic light-emitting display device includes an organic light-emitting device, a thin film transistor (TFT) electrically connected to the organic light-emitting device, and a capacitor electrically connected to the organic light-emitting device, the capacitor including a first electrode layer and a second electrode layer opposite to each other, and a first insulating layer interposed as a single layer between the first electrode layer and the second electrode layer.
Abstract:
A back panel for a flat panel display apparatus includes: a pixel electrode disposed on a substrate; a first gate electrode layer of a thin-film transistor (TFT) disposed on the substrate; a second gate electrode layer disposed on the first gate electrode layer and including a semiconductor material; a third gate electrode layer disposed on the second gate electrode layer and including a metal material; a first insulating layer disposed on the third gate electrode layer; an active layer disposed on the first insulating layer and including a transparent conductive oxide semiconductor; a second insulating layer disposed on the active layer; source and drain electrodes disposed connected to the active layer through the second insulating layer; and a third insulating layer covering the source and drain electrodes. The first gate electrode layer and the pixel electrode include a transparent conductive oxide.
Abstract:
An organic light emitting display device includes a buffer layer on a substrate, the buffer layer including nano-particles, a pixel electrode on the buffer layer, an opposite electrode on the pixel electrode and facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode.
Abstract:
An organic light-emitting display device may include a plurality of scan lines, a plurality of data lines, and a plurality of pixels located at an intersection region of the scan line and the data line, wherein the organic light-emitting display device includes a thin film transistor including a gate electrode on a different layer than a scan line, an active layer on the gate electrode, and source and drain electrodes that are in contact with source and drain regions of the active layer, and a capacitor including a first capacitor electrode on the same layer as the scan line, a second capacitor electrode on the gate electrode, and a third electrode on the same layer as the source and drain electrodes.
Abstract:
In one aspect, a back plane for use in flat panel displays is provided. The back plane may include a substrate; an auxiliary layer; a source electrode and a drain electrode; an active layer; a first insulation layer; a gate electrode; and a second insulation layer.
Abstract:
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
Abstract:
An organic light-emitting display device includes a substrate, a plurality of thin-film transistors on the substrate, each thin-film transistor including an active layer, a planarization layer on the thin-film transistors, a first electrode on the planarization layer and electrically connected to a thin-film transistor, and an ion blocking layer on the planarization layer, the ion blocking layer overlapping the active layer.
Abstract:
An organic light-emitting display device including: a gate electrode formed on a substrate; a first insulating layer formed on the gate electrode; an active layer formed on the first insulating layer, facing the gate electrode; a second insulating layer formed on the first insulating layer, having first openings to expose the active layer; source/drain electrodes formed on the second insulating layer, so as to be connected to exposed portions of the active layer through the first openings; and a metal layer formed on the active layer and contacting the second insulating layer.
Abstract:
A capacitor of an organic light emitting display device includes a first metal layer on a substrate, a first insulating layer on the first metal layer, an oxide semiconductor layer on the first insulating layer, the oxide semiconductor layer corresponding to the first metal layer, a second insulating layer on the first insulating layer, the second insulating layer including an opening exposing a portion of the oxide semiconductor layer, and a second metal layer on the second insulating layer and in the opening, the second metal layer being connected to the exposed portion of the oxide semiconductor layer.
Abstract:
An organic light emitting display (OLED) including a thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes, the active layer being insulated from the gate electrode and including an oxide semiconductor and the source and drain electrodes being insulated from the gate electrode and contacting the active layer; a first insulation layer covering the TFT; a second insulation layer on the first insulation layer, the second insulation layer being formed of amorphous silicon without doping; a pixel electrode on the second insulation layer; a third insulation layer on the second insulation layer, the third insulation layer covering an edge of the pixel electrode; an organic light emitting layer on the pixel electrode; and a facing electrode on the organic light emitting layer and the third insulation layer.