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    Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same
    6.
    发明授权
    Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same 有权
    氧化物半导体薄膜晶体管，其制造方法以及包含该氧化物半导体薄膜晶体管的有机电致发光器件

    公开(公告)号：US08319217B2

    公开(公告)日：2012-11-27

    申请号：US12873199

    申请日：2010-08-31

    申请人： Kwang-Suk Kim ,  Min-Kyu Kim

    发明人： Kwang-Suk Kim ,  Min-Kyu Kim

    IPC分类号： H01L29/12

    CPC分类号： H01L29/7869

    摘要： A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the oxide semiconductor layer has a Zn concentration gradient; and source and drain regions respectively formed on both sides of the oxide semiconductor layer and the gate insulating layer.

    摘要翻译： 1.一种薄膜晶体管，包括：基板; 形成在所述基板上的栅电极; 形成在所述栅电极上的栅极绝缘层和所述基板的露出部分; 形成在所述栅绝缘层上以对应于所述栅极的氧化物半导体层，并且包括HfInZnO基氧化物半导体，其中所述氧化物半导体层具有Zn浓度梯度; 以及分别形成在氧化物半导体层和栅极绝缘层的两侧上的源极和漏极区域。

    TFT, display apparatus including TFT, and organic light-emitting display apparatus including TFT
    7.
    发明授权
    TFT, display apparatus including TFT, and organic light-emitting display apparatus including TFT 有权
    TFT，包括TFT的显示装置和包括TFT的有机发光显示装置

    公开(公告)号：US08723170B2

    公开(公告)日：2014-05-13

    申请号：US13688313

    申请日：2012-11-29

    申请人： Ki-Ju Im ,  Hui-Won Yang ,  Min-Kyu Kim ,  Jong-Han Jeong ,  Kwang-Suk Kim

    发明人： Ki-Ju Im ,  Hui-Won Yang ,  Min-Kyu Kim ,  Jong-Han Jeong ,  Kwang-Suk Kim

    IPC分类号： H01L29/08

    CPC分类号： H01L29/7869 ,  H01L27/3262 ,  H01L29/42384 ,  H01L51/5296

    摘要： A thin film transistor includes a gate electrode having a first length measured in a first direction and a first width measured in a second direction, an active layer having a second length measured in the first direction and a second width measured in the second direction, the second length of the active layer being greater than the first length of the gate electrode, and the second width of the active layer being greater than the first width of the gate electrode, and a source electrode and a drain electrode that are connected to the active layer, wherein at least one of opposite side edges of the gate electrode extending in the first direction is spaced apart from a corresponding opposite side edge of the active layer extending in the first direction.

    摘要翻译： 薄膜晶体管包括栅电极，其具有沿第一方向测量的第一长度和沿第二方向测量的第一宽度，具有沿第一方向测量的第二长度的有源层和沿第二方向测量的第二宽度， 有源层的第二长度大于栅电极的第一长度，并且有源层的第二宽度大于栅极电极的第一宽度，以及与活性层连接的源电极和漏电极 其中沿着所述第一方向延伸的所述栅电极的至少一个相对侧边缘与在所述第一方向上延伸的所述有源层的对应的相对侧边缘间隔开。

    Thin film transistor, method of manufacturing the same and flat panel display device having the same
    8.
    发明授权
    Thin film transistor, method of manufacturing the same and flat panel display device having the same 有权
    薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示装置

    公开(公告)号：US07994500B2

    公开(公告)日：2011-08-09

    申请号：US12424860

    申请日：2009-04-16

    申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

    发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

    IPC分类号： H01L29/22

    CPC分类号： H01L29/7869 ,  H01L29/78606

    摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

    摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止电荷俘获。

    OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING THE SAME
    9.
    发明申请
    OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING THE SAME 有权
    氧化物半导体薄膜晶体管，其制造方法和包括其的有机电致发光器件

    公开(公告)号：US20110140095A1

    公开(公告)日：2011-06-16

    申请号：US12873199

    申请日：2010-08-31

    申请人： Kwang-Suk Kim ,  Min-Kyu Kim

    发明人： Kwang-Suk Kim ,  Min-Kyu Kim

    IPC分类号： H01L29/22 ,  H01L21/336

    CPC分类号： H01L29/7869

    摘要： A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the oxide semiconductor layer has a Zn concentration gradient; and source and drain regions respectively formed on both sides of the oxide semiconductor layer and the gate insulating layer.

    摘要翻译： 1.一种薄膜晶体管，包括：基板; 形成在所述基板上的栅电极; 形成在所述栅电极上的栅绝缘层和所述基板的露出部分; 形成在所述栅绝缘层上以对应于所述栅极的氧化物半导体层，并且包括HfInZnO基氧化物半导体，其中所述氧化物半导体层具有Zn浓度梯度; 以及分别形成在氧化物半导体层和栅极绝缘层的两侧上的源极和漏极区域。

    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME
    10.
    发明申请
    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
    薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示器件

    公开(公告)号：US20090321732A1

    公开(公告)日：2009-12-31

    申请号：US12424860

    申请日：2009-04-16

    申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

    发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

    IPC分类号： H01L29/22 ,  H01L21/44

    CPC分类号： H01L29/7869 ,  H01L29/78606

    摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

    摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。