公开(公告)号：US20130001602A1

公开(公告)日：2013-01-03

申请号：US13454193

申请日：2012-04-24

申请人： Sang-IL PARK ,  Min-Kyu Kim ,  Chaun-Gi Choi ,  Kwang-Suk Kim

发明人： Sang-IL PARK ,  Min-Kyu Kim ,  Chaun-Gi Choi ,  Kwang-Suk Kim

IPC分类号： H01L33/62

CPC分类号： H01L27/3244 ,  H01L51/5265 ,  H01L2251/5369

摘要： An organic light emitting display device includes a buffer layer on a substrate, the buffer layer including nano-particles, a pixel electrode on the buffer layer, an opposite electrode on the pixel electrode and facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode.

摘要翻译： 有机发光显示装置包括：衬底上的缓冲层，包含纳米颗粒的缓冲层，缓冲层上的像素电极，像素电极上的相对电极，并且与像素电极相对的有机发射层， 像素电极和相对电极。

公开(公告)号：US08178884B2

公开(公告)日：2012-05-15

申请号：US12393422

申请日：2009-02-26

申请人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

发明人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/76 ,  H01L31/112 ,  H01L29/12 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L29/7869

摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

公开(公告)号：US20100006833A1

公开(公告)日：2010-01-14

申请号：US12393422

申请日：2009-02-26

申请人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

发明人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

IPC分类号： H01L29/12 ,  H01L21/04

CPC分类号： H01L29/7869

摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

公开(公告)号：US08728862B2

公开(公告)日：2014-05-20

申请号：US13462535

申请日：2012-05-02

申请人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

发明人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

IPC分类号： H01L21/16 ,  H01L21/00

CPC分类号： H01L29/7869

摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

公开(公告)号：US08193535B2

公开(公告)日：2012-06-05

申请号：US13276884

申请日：2011-10-19

申请人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

发明人： Jae-Heung Ha ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Jong-Han Jeong ,  Min-Kyu Kim ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang ,  Chaun-Gi Choi

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/76 ,  H01L31/112 ,  H01L29/12 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L29/7869

摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。 薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

公开(公告)号：US08729552B2

公开(公告)日：2014-05-20

申请号：US13494414

申请日：2012-06-12

申请人： Kwang-Suk Kim ,  Min-Kyu Kim

发明人： Kwang-Suk Kim ,  Min-Kyu Kim

IPC分类号： H01L29/12

CPC分类号： H01L29/78606 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/45 ,  H01L29/78696

摘要： In one aspect, a back plane for a flat panel display apparatus include: a substrate; a source electrode and a drain electrode formed on the substrate; a capacitor bottom electrode formed on a same layer as the source/drain electrodes; an active layer formed on the substrate in correspondence to the source electrode and the drain electrode; a blocking layer interposed between the source electrode and the drain electrode and the active layer; a first insulation layer formed on the substrate to cover the active layer; a gate electrode formed on the first insulation layer in correspondence to the active layer; a capacitor top electrode formed on a same layer as the gate electrode in correspondence to the capacitor bottom electrode; and a second insulation layer formed on the first insulation layer to cover the gate electrode and the capacitor top electrode is provided.

摘要翻译： 一方面，平板显示装置的背板包括：基板; 形成在所述基板上的源电极和漏电极; 形成在与所述源极/漏极电极相同的层上的电容器底部电极; 形成在所述基板上的对应于所述源电极和所述漏电极的有源层; 插入在源电极和漏电极和有源层之间的阻挡层; 形成在所述基板上以覆盖所述有源层的第一绝缘层; 对应于所述有源层形成在所述第一绝缘层上的栅电极; 形成在与电容器底部电极对应的与栅电极相同的层上的电容器顶部电极; 并且设置在第一绝缘层上形成以覆盖栅电极和电容器顶电极的第二绝缘层。

公开(公告)号：US08541258B2

公开(公告)日：2013-09-24

申请号：US13091614

申请日：2011-04-21

申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang

发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

公开(公告)号：US08330150B2

公开(公告)日：2012-12-11

申请号：US12829139

申请日：2010-07-01

申请人： Hyun-Joong Chung ,  Jin-Seong Park ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeong-Gon Mo ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Hui-Won Yang ,  Kwang-Suk Kim ,  Eun-Hyun Kim ,  Jae-Wook Kang ,  Jae-Soon Im

发明人： Hyun-Joong Chung ,  Jin-Seong Park ,  Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeong-Gon Mo ,  Min-Kyu Kim ,  Tae-Kyung Ahn ,  Hui-Won Yang ,  Kwang-Suk Kim ,  Eun-Hyun Kim ,  Jae-Wook Kang ,  Jae-Soon Im

IPC分类号： H01L29/08

CPC分类号： H01L27/3248 ,  H01L27/1225 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/52 ,  H01L51/5237 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5346

摘要： An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

摘要翻译： 公开了一种有机发光显示装置，其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 另外公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如薄膜晶体管（TFT），其包括栅电极，与栅电极绝缘的有源层，与栅电极绝缘的源电极和漏电极，并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

公开(公告)号：US08319217B2

公开(公告)日：2012-11-27

申请号：US12873199

申请日：2010-08-31

申请人： Kwang-Suk Kim ,  Min-Kyu Kim

发明人： Kwang-Suk Kim ,  Min-Kyu Kim

IPC分类号： H01L29/12

CPC分类号： H01L29/7869

摘要： A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the oxide semiconductor layer has a Zn concentration gradient; and source and drain regions respectively formed on both sides of the oxide semiconductor layer and the gate insulating layer.

摘要翻译： 1.一种薄膜晶体管，包括：基板; 形成在所述基板上的栅电极; 形成在所述栅电极上的栅极绝缘层和所述基板的露出部分; 形成在所述栅绝缘层上以对应于所述栅极的氧化物半导体层，并且包括HfInZnO基氧化物半导体，其中所述氧化物半导体层具有Zn浓度梯度; 以及分别形成在氧化物半导体层和栅极绝缘层的两侧上的源极和漏极区域。

公开(公告)号：US07994500B2

公开(公告)日：2011-08-09

申请号：US12424860

申请日：2009-04-16

申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

IPC分类号： H01L29/22

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止电荷俘获。