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1.发明申请THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权薄膜晶体管，其制造方法以及具有该薄膜晶体管的平板显示器件公开(公告)号：US20110212580A1
公开(公告)日：2011-09-01
申请号：US13102984
申请日：2011-05-06
IPC分类号： H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×1013 to 1×1018 #cm−3 by controlling an amount of Zr.
摘要翻译： 教导了使用氧化物半导体层作为有源层的薄膜晶体管（TFT），制造TFT的方法以及包括TFT的平板显示器（FPD）。 TFT包括形成在基板上的栅极电极，通过栅极绝缘层与栅极电绝缘的氧化物半导体层，以及包括沟道区域，源极区域和漏极区域的氧化物半导体层以及源极电极 以及分别与源极区域和漏极区域电接触的漏极电极。 氧化物半导体层由包含Zr的InZnO或IZO层（铟锌氧化物层）形成。 通过控制Zr量，将IZO层的载流子密度控制在1×1013〜1×1018＃cm -3。
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2.发明授权Method of manufacturing thin film transistor and method of manufacturing organic light emitting display having thin film transistor 有权制造薄膜晶体管的方法和制造具有薄膜晶体管的有机发光显示器的方法公开(公告)号：US09240487B2
公开(公告)日：2016-01-19
申请号：US12266797
申请日：2008-11-07
申请人： Hun-Jung Lee , Jae-Kyeong Jeong , Hyun-Soo Shin , Jong-Han Jeong , Jin-Seong Park , Steve Y. G. Mo
发明人： Hun-Jung Lee , Jae-Kyeong Jeong , Hyun-Soo Shin , Jong-Han Jeong , Jin-Seong Park , Steve Y. G. Mo
IPC分类号： H01L21/00 , H01L29/786 , H01L29/49 , H01L27/12 , H01L29/417 , H01L27/32 , H01L21/02
CPC分类号： H01L29/7869 , H01L21/02565 , H01L27/1222 , H01L27/1251 , H01L27/3244 , H01L27/3262 , H01L29/41733 , H01L29/4908 , H01L29/786 , H01L29/78618
摘要： A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm3 to have stable electrical property.
摘要翻译： 制造具有氧作为半导体层的化合物半导体的薄膜晶体管的制造方法以及具有薄膜晶体管的有机发光显示器的制造方法包括：在绝缘基板上形成栅电极; 在栅电极上形成栅极绝缘层; 在所述栅绝缘层上形成包括氧离子的半导体层，并且包括沟道区，源极区和漏极区; 形成源电极和漏电极，分别与源极区域和漏极区域中的半导体层接触; 以及通过涂覆有机材料在半导体层上形成钝化层，其中半导体层的载流子密度保持在1E + 17至1E + 18 / cm3的范围内以具有稳定的电性能。
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3.发明授权Thin film transistor, method of manufacturing the same, and flat panel display device having the same 有权薄膜晶体管及其制造方法以及具有该薄膜晶体管的平板显示装置公开(公告)号：US08247266B2
公开(公告)日：2012-08-21
申请号：US13102984
申请日：2011-05-06
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×1013 to 1×1018 #cm−3 by controlling an amount of Zr.
摘要翻译： 教导了使用氧化物半导体层作为有源层的薄膜晶体管（TFT），制造TFT的方法以及包括TFT的平板显示器（FPD）。 TFT包括形成在基板上的栅极电极，通过栅极绝缘层与栅极电绝缘的氧化物半导体层，以及包括沟道区域，源极区域和漏极区域的氧化物半导体层以及源极电极 以及分别与源极区域和漏极区域电接触的漏极电极。 氧化物半导体层由包含Zr的InZnO或IZO层（铟锌氧化物层）形成。 通过控制Zr量，将IZO层的载流子密度控制在1×1013〜1×1018＃cm -3。
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公开(公告)号：US08227804B2
公开(公告)日：2012-07-24
申请号：US13023686
申请日：2011-02-09
申请人： Huiwon Yang , Ki-Ju Im , Chaun-Gi Choi , Eun-Hyun Kim , Steve Y. G. Mo
发明人： Huiwon Yang , Ki-Ju Im , Chaun-Gi Choi , Eun-Hyun Kim , Steve Y. G. Mo
IPC分类号： H01L29/10
CPC分类号： H01L27/3262
摘要： An organic light-emitting display device including: a gate electrode formed on a substrate; a first insulating layer formed on the gate electrode; an active layer formed on the first insulating layer, facing the gate electrode; a second insulating layer formed on the first insulating layer, having first openings to expose the active layer; source/drain electrodes formed on the second insulating layer, so as to be connected to exposed portions of the active layer through the first openings; and a metal layer formed on the active layer and contacting the second insulating layer.
摘要翻译： 一种有机发光显示装置，包括：形成在基板上的栅电极; 形成在栅电极上的第一绝缘层; 形成在所述第一绝缘层上的与所述栅电极相对的有源层; 形成在所述第一绝缘层上的第二绝缘层，具有用于暴露所述有源层的第一开口; 源极/漏电极，形成在第二绝缘层上，以便通过第一开口连接到有源层的暴露部分; 以及形成在所述有源层上并接触所述第二绝缘层的金属层。
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5.发明授权Thin film transistor, method of manufacturing the same, and flat panel display device having the same 有权薄膜晶体管及其制造方法以及具有该薄膜晶体管的平板显示装置公开(公告)号：US08008658B2
公开(公告)日：2011-08-30
申请号：US12320775
申请日：2009-02-04
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×1013 to 1×1018 #cm−3 by controlling an amount of Zr.
摘要翻译： 教导了使用氧化物半导体层作为有源层的薄膜晶体管（TFT），制造TFT的方法以及包括TFT的平板显示器（FPD）。 TFT包括形成在基板上的栅极电极，通过栅极绝缘层与栅极电绝缘的氧化物半导体层，以及包括沟道区域，源极区域和漏极区域的氧化物半导体层以及源极电极 以及分别与源极区域和漏极区域电接触的漏极电极。 氧化物半导体层由包含Zr的InZnO或IZO层（铟锌氧化物层）形成。 通过控制Zr量，将IZO层的载流子密度控制在1×1013〜1×1018＃cm -3。
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公开(公告)号：US07876038B2
公开(公告)日：2011-01-25
申请号：US12273765
申请日：2008-11-19
申请人： Hun-Jung Lee , Dong-Won Han , Steve Y. G. Mo
发明人： Hun-Jung Lee , Dong-Won Han , Steve Y. G. Mo
IPC分类号： H01J1/62
CPC分类号： H01L51/5092
摘要： An organic light emitting display including: a driving thin film transistor (TFT) including a semiconductor layer on a substrate including a source electrode, a drain electrode, and an N-type oxide semiconductor; at least one insulating layer formed on the driving TFT; a pixel defining layer for defining a pixel region on the insulating layer; a cathode electrode coupled to a drain electrode of the driving TFT and patterned to correspond to the pixel region; an electron injection layer arranged over the entire surfaces of the pixel defining layer and the cathode electrode and formed of a material whose band gaps are 3.0 eV to 5.0 eV selected from the group consisting of an oxide, a nitride, a fluoride, and diamond on; an organic light emitting layer formed on the electron injection layer to correspond to the cathode region; and an anode electrode formed on the organic light emitting layer.
摘要翻译： 一种有机发光显示器，包括：在包括源电极，漏电极和N型氧化物半导体的衬底上的包括半导体层的驱动薄膜晶体管（TFT）; 在驱动TFT上形成的至少一个绝缘层; 用于限定绝缘层上的像素区域的像素限定层; 阴极，其耦合到所述驱动TFT的漏电极并且被图案化以对应于所述像素区域; 电子注入层，其布置在像素限定层和阴极电极的整个表面上，并且由带隙为3.0eV至5.0eV的材料形成，该材料选自氧化物，氮化物，氟化物和金刚石 ; 形成在电子注入层上的与阴极区对应的有机发光层; 以及形成在有机发光层上的阳极电极。
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公开(公告)号：US08598781B2
公开(公告)日：2013-12-03
申请号：US12315000
申请日：2008-12-19
申请人： Hun-Jung Lee , Jae-Kyeong Jeong , Steve Y. G. Mo
发明人： Hun-Jung Lee , Jae-Kyeong Jeong , Steve Y. G. Mo
IPC分类号： H01L51/50
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/1288 , H01L27/3248 , H01L27/3262 , H01L29/7869
摘要： An Organic Light Emitting Display (OLED) and a method of fabricating the OLED includes: a substrate including a pixel region and a non-pixel region; a gate electrode arranged in the non-pixel region of the substrate; a first insulating layer arranged on the substrate having the gate electrode formed thereon, and having an open groove on an upper surface of a region opposite to the gate electrode; a semiconductor layer buried in the groove and including a source region, a channel region and a drain region; and an organic thin film layer arranged in the pixel region of the substrate. A common electrode is arranged between the drain region of the semiconductor layer and the organic thin film layer to electrically couple the drain region to the organic thin film layer.
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