公开(公告)号：US20170110456A1

公开(公告)日：2017-04-20

申请号：US15296703

申请日：2016-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jin Jeon ,  Young-Gun Ko ,  Gi-Gwan Park ,  Je-Min Yoo

IPC: H01L27/092 ,  H01L29/165 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L27/02

CPC classification number: H01L27/0924 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/7846 ,  H01L29/7848

Abstract: Semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin. The semiconductor device includes a second insulating material in a second fin. The first and second insulating materials have different respective sizes. For example, in some embodiments, the first and second insulating materials have different respective widths and/or depths in the first and second fins, respectively.

公开(公告)号：US10141312B2

公开(公告)日：2018-11-27

申请号：US15296703

申请日：2016-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jin Jeon ,  Young-Gun Ko ,  Gi-Gwan Park ,  Je-Min Yoo

IPC: H01L27/092 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L29/08 ,  H01L29/165 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238

Abstract: Semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin. The semiconductor device includes a second insulating material in a second fin. The first and second insulating materials have different respective sizes. For example, in some embodiments, the first and second insulating materials have different respective widths and/or depths in the first and second fins, respectively.

公开(公告)号：US09209177B2

公开(公告)日：2015-12-08

申请号：US13783513

申请日：2013-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon-Hae Kim ,  Jong-Shik Yoon ,  Young-Gun Ko

IPC: H01L27/12 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/823431

Abstract: Semiconductor devices are provided. The semiconductor devices may include an active pattern and a insulation layer. The semiconductor devices may include a gate that is on the active pattern and that includes a first material, and a dummy gate that is on the insulation layer and that includes a second material different from the first material.

Abstract translation: 提供半导体器件。 半导体器件可以包括有源图案和绝缘层。 半导体器件可以包括位于有源图案上的并且包括第一材料的栅极和位于绝缘层上并且包括不同于第一材料的第二材料的伪栅极。