公开(公告)号：US10141312B2

公开(公告)日：2018-11-27

申请号：US15296703

申请日：2016-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jin Jeon ,  Young-Gun Ko ,  Gi-Gwan Park ,  Je-Min Yoo

IPC: H01L27/092 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L29/08 ,  H01L29/165 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238

Abstract: Semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin. The semiconductor device includes a second insulating material in a second fin. The first and second insulating materials have different respective sizes. For example, in some embodiments, the first and second insulating materials have different respective widths and/or depths in the first and second fins, respectively.

公开(公告)号：US20170110456A1

公开(公告)日：2017-04-20

申请号：US15296703

申请日：2016-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jin Jeon ,  Young-Gun Ko ,  Gi-Gwan Park ,  Je-Min Yoo

IPC: H01L27/092 ,  H01L29/165 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L27/02

CPC classification number: H01L27/0924 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/7846 ,  H01L29/7848

Abstract: Semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin. The semiconductor device includes a second insulating material in a second fin. The first and second insulating materials have different respective sizes. For example, in some embodiments, the first and second insulating materials have different respective widths and/or depths in the first and second fins, respectively.