公开(公告)号：US11495597B2

公开(公告)日：2022-11-08

申请号：US17030556

申请日：2020-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US20170125408A1

公开(公告)日：2017-05-04

申请号：US15335984

申请日：2016-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu PARK ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L29/49 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L27/088 ,  H01L21/02345 ,  H01L21/02356 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/435 ,  H01L29/4941 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854 ,  H01L29/7856

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US20210020631A1

公开(公告)日：2021-01-21

申请号：US17030556

申请日：2020-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US10361194B2

公开(公告)日：2019-07-23

申请号：US15335984

申请日：2016-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L21/02 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L27/088 ,  H01L27/092 ,  H01L21/8234 ,  H01L21/8238

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US20190312030A1

公开(公告)日：2019-10-10

申请号：US16432233

申请日：2019-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/78 ,  H01L29/51 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/02 ,  H01L29/43

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US20160049478A1

公开(公告)日：2016-02-18

申请号：US14678331

申请日：2015-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyun Song ,  Weon-Hong Kim ,  Soo-Jung Choi ,  Yoon-Tae Hwang

IPC: H01L29/40 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/823821 ,  H01L21/823842 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method for fabricating a semiconductor device comprises forming a gate insulation layer on a substrate including a first region and a second region, forming a first gate conductive layer and a capping layer on the first region and the second region and heat-treating the substrate, removing the capping layer from the first region and the second region, forming a second gate conductive layer on the first region and the second region, nitriding the second gate conductive layer, and forming a third gate conductive layer on the second region.

Abstract translation: 一种制造半导体器件的方法包括在包括第一区域和第二区域的衬底上形成栅极绝缘层，在第一区域和第二区域上形成第一栅极导电层和覆盖层，并对衬底进行热处理， 从所述第一区域和所述第二区域移除所述覆盖层，在所述第一区域和所述第二区域上形成第二栅极导电层，氮化所述第二栅极导电层，以及在所述第二区域上形成第三栅极导电层。