公开(公告)号：US10408430B2

公开(公告)日：2019-09-10

申请号：US15713072

申请日：2017-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-gyun Jung ,  Won-soo Ji ,  Jong-sup Song ,  Sang-woo Ha

IPC: F21V5/04 ,  F21V15/01 ,  F21K9/68 ,  F21V7/00 ,  G02B3/00 ,  G02B19/00 ,  F21S8/08 ,  F21V5/00 ,  F21V5/08 ,  F21W131/103 ,  F21Y105/16 ,  F21Y115/10

Abstract: There are provided a lighting lens, a lighting lens array, and a lighting apparatus. The lighting lens may include an incidence part to receive light from a light source and an emission part to emit light provided from the incidence part. The incidence part may have a concave region that contains a light source and a first protrusion at a rear side of the light source that protrudes downwards from a top surface of the concave region. The emission part may include a dome-shaped part that encloses the incidence part and a second protrusion at the rear side of the light source that protrudes upwards from a top surface of the dome-shaped part. A lowermost portion of the emission part may be formed at a first plane, and an angle between an outer surface of the emission part and the first plane is an obtuse angle.

公开(公告)号：US08809189B2

公开(公告)日：2014-08-19

申请号：US13693795

申请日：2012-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui-seok Kim ,  Sang-kyu Bang ,  Soo-hyun Cho ,  Choo-ho Kim ,  Won-soo Ji

IPC: H01L21/44

CPC classification number: H01L21/2633 ,  H01L21/76898 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods of forming through-silicon vias by using laser ablation. A method includes, laser drilling to form a plurality of grooves by irradiating a laser beam onto an upper surface of a silicon wafer, and grinding a lower surface of the silicon wafer to form a plurality of through-silicon vias by exposing the grooves on the lower surface of the silicon wafer.

Abstract translation: 通过使用激光烧蚀形成穿硅通孔的方法。 一种方法包括：激光钻孔以通过将激光束照射到硅晶片的上表面上来形成多个凹槽，以及研磨硅晶片的下表面以形成多个穿硅通孔，以通过将 硅晶片的下表面。

公开(公告)号：US10014454B2

公开(公告)日：2018-07-03

申请号：US15412320

申请日：2017-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-wook Hwang ,  Min-gyeong Gwon ,  Sae-sil Kim ,  Eun-joo Shin ,  Yu-ri Jung ,  Won-soo Ji ,  Jong-sup Song

IPC: H01L33/58 ,  H01L33/60 ,  H01L33/50 ,  H01L33/44

CPC classification number: H01L33/60 ,  H01L33/44 ,  H01L33/46 ,  H01L33/507 ,  H01L33/58

Abstract: A light-emitting device includes a light-emitting structure, a lens, and a reflective layer. The light-emitting structure includes a light-emitting stack structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are stacked, a first electrode layer electrically connected to the first-conductivity-type semiconductor layer, and a second electrode layer electrically connected to the second-conductivity-type semiconductor layer. The lens is located on the light-emitting structure. The reflective layer is located on the lens.

公开(公告)号：US20170324011A1

公开(公告)日：2017-11-09

申请号：US15412320

申请日：2017-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-wook Hwang ,  Min-gyeong Gwon ,  Sae-sil Kim ,  Eun-joo Shin ,  Yu-ri Jung ,  Won-soo Ji ,  Jong-sup Song

IPC: H01L33/60 ,  H01L33/50 ,  H01L33/44

CPC classification number: H01L33/60 ,  H01L33/44 ,  H01L33/507

Abstract: A light-emitting device includes a light-emitting structure, a lens, and a reflective layer. The light-emitting structure includes a light-emitting stack structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are stacked, a first electrode layer electrically connected to the first-conductivity-type semiconductor layer, and a second electrode layer electrically connected to the second-conductivity-type semiconductor layer. The lens is located on the light-emitting structure. The reflective layer is located on the lens.

公开(公告)号：US20140017837A1

公开(公告)日：2014-01-16

申请号：US13844742

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eui-seok KIM ,  Choo-ho Kim ,  Soo-Hyun Cho ,  Won-soo Ji

IPC: H01L33/48

CPC classification number: H01L33/48 ,  H01L24/97 ,  H01L33/0095 ,  H01L2224/48091 ,  H01L2924/12036 ,  H01L2924/1204 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods of cutting silicon substrates having a light-emitting element package. The method includes preparing a silicon substrate on which a plurality of light-emitting element chips are mounted and a transparent material layer that covers the light-emitting element chips is formed; removing the transparent material layer between the light-emitting element chips along a predetermined cutting line by using a mechanical cutting method; forming a scribing line corresponding to the predetermined cutting line on the silicon substrate by using a laser processing method; and cutting the silicon substrate to form individual light-emitting element packages by applying a mechanical impact to the silicon substrate along the scribing line. The method may enhance productivity of a cutting process of light-emitting element packages, and may prevent damage or transformation of the transparent material layer.

Abstract translation: 切割具有发光元件封装的硅衬底的方法。 该方法包括制备其上安装有多个发光元件芯片的硅基板，并且形成覆盖发光元件芯片的透明材料层; 通过使用机械切割方法沿着预定切割线去除所述发光元件芯片之间的透明材料层; 通过使用激光加工方法在所述硅基板上形成与所述预定切割线对应的划线; 以及通过沿着所述划刻线对所述硅衬底施加机械冲击来切割所述硅衬底以形成单独的发光元件封装。 该方法可以提高发光元件封装的切割加工的生产率，并且可以防止透明材料层的损坏或变形。