公开(公告)号：US10014454B2

公开(公告)日：2018-07-03

申请号：US15412320

申请日：2017-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-wook Hwang ,  Min-gyeong Gwon ,  Sae-sil Kim ,  Eun-joo Shin ,  Yu-ri Jung ,  Won-soo Ji ,  Jong-sup Song

IPC: H01L33/58 ,  H01L33/60 ,  H01L33/50 ,  H01L33/44

CPC classification number: H01L33/60 ,  H01L33/44 ,  H01L33/46 ,  H01L33/507 ,  H01L33/58

Abstract: A light-emitting device includes a light-emitting structure, a lens, and a reflective layer. The light-emitting structure includes a light-emitting stack structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are stacked, a first electrode layer electrically connected to the first-conductivity-type semiconductor layer, and a second electrode layer electrically connected to the second-conductivity-type semiconductor layer. The lens is located on the light-emitting structure. The reflective layer is located on the lens.

公开(公告)号：US20170324011A1

公开(公告)日：2017-11-09

申请号：US15412320

申请日：2017-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-wook Hwang ,  Min-gyeong Gwon ,  Sae-sil Kim ,  Eun-joo Shin ,  Yu-ri Jung ,  Won-soo Ji ,  Jong-sup Song

IPC: H01L33/60 ,  H01L33/50 ,  H01L33/44

CPC classification number: H01L33/60 ,  H01L33/44 ,  H01L33/507

Abstract: A light-emitting device includes a light-emitting structure, a lens, and a reflective layer. The light-emitting structure includes a light-emitting stack structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, which are stacked, a first electrode layer electrically connected to the first-conductivity-type semiconductor layer, and a second electrode layer electrically connected to the second-conductivity-type semiconductor layer. The lens is located on the light-emitting structure. The reflective layer is located on the lens.