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公开(公告)号：US09893251B2
公开(公告)日：2018-02-13
申请号：US15362966
申请日：2016-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung-sub Kim , Yong-il Kim , Dong-gun Lee , Kyung-wook Hwang , Jin-sub Lee , Min-gyeong Gwon
CPC classification number: H01L33/58 , G02B5/208 , H01L25/0753 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/44 , H01L33/504 , H01L33/508 , H01L33/56 , H01L33/60 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.
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公开(公告)号：US09419176B2
公开(公告)日：2016-08-16
申请号：US14651974
申请日：2013-12-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-wook Hwang , Han-kyu Seong , Hun-jae Chung , Nam-goo Cha
IPC: H01L33/16 , H01L33/06 , H01L27/15 , H01L33/40 , H01L33/42 , H01L33/00 , H01L33/62 , H01L33/24 , H01L33/08 , H01L33/20
CPC classification number: H01L33/16 , H01L27/153 , H01L33/0054 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2933/0016 , H01L2933/0066
Abstract: A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core.
Abstract translation: 三维（3D）发光装置可以包括彼此分开形成的多个3D发光结构，每个3D发光结构包括：在一个表面上垂直生长并以第一导电类型掺杂的半导体芯 ; 形成为包围半导体芯的表面的有源层; 以及形成为围绕有源层的表面并以第二导电类型掺杂的第一半导体层。 3D发光装置可以包括：形成在3D发光结构的下角部之间以暴露3D发光结构的上端部的第一多孔绝缘层; 电连接到第一半导体层的第一电极; 和与半导体芯电连接的第二电极。
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公开(公告)号：US10243123B2
公开(公告)日：2019-03-26
申请号：US15705069
申请日：2017-09-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha-nul Yoo , Yong-il Kim , Nam-goo Cha , Wan-tae Lim , Kyung-wook Hwang , Sung-hyun Sim , Hye-seok Noh
IPC: H01L25/075 , H01L33/00 , H01L33/60 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/50 , H01L33/38 , H01L33/44
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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公开(公告)号：US09991426B2
公开(公告)日：2018-06-05
申请号：US15401604
申请日：2017-01-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung-mok Hong , Kyung-wook Hwang
CPC classification number: H01L33/46 , H01L21/764 , H01L33/483 , H01L33/486 , H01L33/502 , H01L33/52 , H01L33/56 , H01L33/62 , H01L33/64 , H01L33/641 , H01L2224/32257 , H01L2224/48091 , H01L2224/48257 , H01L2224/73265 , H01L2224/83385 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A light-emitting device package includes a supporting substrate, a light-emitting device on the supporting substrate, an adhesive layer on at least a portion of a side surface or lower surface of the light-emitting device, the adhesive layer connecting the light-emitting device to the supporting substrate, and an air layer in a space defined by the supporting substrate, the light-emitting device, and the adhesive layer.
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5.发明授权Light-emitting device including nitride-based semiconductor omnidirectional reflector 有权包括氮化物基半导体全向反射器的发光器件公开(公告)号：US08941140B2
公开(公告)日：2015-01-27
申请号：US13844632
申请日：2013-03-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-wook Hwang , Seong-eun Park , Hun-jae Chung
Abstract: A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.
Abstract translation: 发光器件包括氮化物基半导体反射器。 发光装置包括氮化物类反射器和设置在氮化物类反射器上的发光单元。 基于氮化物的反射器包括交替层叠的未掺杂的氮化物半导体层和重掺杂的氮化物半导体层。 在其边缘蚀刻重掺杂的氮化物半导体层，以在相邻的未掺杂的氮化物半导体层之间形成空气层。
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Patent Agency Ranking
公开(公告)号：US10734559B2
公开(公告)日：2020-08-04
申请号：US16361823
申请日：2019-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha-nul Yoo , Yong-il Kim , Nam-goo Cha , Wan-tae Lim , Kyung-wook Hwang , Sung-hyun Sim , Hye-seok Noh
IPC: H01L33/00 , H01L25/075 , H01L33/60 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/50 , H01L33/38 , H01L33/44
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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公开(公告)号：US09799809B2
公开(公告)日：2017-10-24
申请号：US15201384
申请日：2016-07-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha-nul Yoo , Yong-il Kim , Nam-goo Cha , Wan-tae Lim , Kyung-wook Hwang , Sung-hyun Sim , Hye-seok Noh
IPC: H01L33/00 , H01L25/00 , H01L33/60 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/50 , H01L33/38 , H01L25/075
CPC classification number: H01L33/60 , H01L25/0753 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/50 , H01L33/502 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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公开(公告)号：US09054259B2
公开(公告)日：2015-06-09
申请号：US13844782
申请日：2013-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-wook Hwang , Cheol-Soo Sone , Geon-wook Yoo , Dong-hoon Lee , Nam-goo Cha , Jae-hyeok Heo
Abstract: The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency.
Abstract translation: 本申请涉及一种发光器件及其制造方法。 该装置包括下部，以及设置在下部的垂直发光结构。 导电构件部分地围绕垂直发光结构，并且反射构件设置在垂直发光结构之间。 反射构件反射从垂直发光结构沿横向发射的光，以使从垂直发光结构沿横向发射的光透过光吸收构件的次数最小化，从而增加 发光效率高。
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公开(公告)号：US20130313583A1
公开(公告)日：2013-11-28
申请号：US13844782
申请日：2013-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-wook Hwang , Cheol-Soo Sone , Geno-wook Yoo , Dong-hoon Lee , Nam-goo Cha , Jae-hyeok Heo
IPC: H01L33/08
Abstract: The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency.
Abstract translation: 本申请涉及一种发光器件及其制造方法。 该装置包括下部，以及设置在下部的垂直发光结构。 导电构件部分地围绕垂直发光结构，并且反射构件设置在垂直发光结构之间。 反射构件反射从垂直发光结构沿横向发射的光，以使从垂直发光结构沿横向发射的光透过光吸收构件的次数最小化，从而增加 发光效率高。
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公开(公告)号：US20190221730A1
公开(公告)日：2019-07-18
申请号：US16361823
申请日：2019-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha-nul Yoo , Yong-il Kim , Nam-goo Cha , Wan-tae Lim , Kyung-wook Hwang , Sung-hyun Sim , Hye-seok Noh
CPC classification number: H01L33/60 , H01L25/0753 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/50 , H01L33/502 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
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