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1.发明授权Light-emitting device having dielectric reflector and method of manufacturing the same 有权具有介质反射体的发光装置及其制造方法公开(公告)号：US08847265B2
公开(公告)日：2014-09-30
申请号：US13873688
申请日：2013-04-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-hoon Lee , Geon-wook Yoo , Nam-goo Cha , Kyung-wook Hwang
CPC classification number: H01L33/60 , B82Y20/00 , H01L27/15 , H01L33/08 , H01L33/14 , H01L33/24 , H01L33/46 , Y10S977/762 , Y10S977/949 , Y10S977/95
Abstract: A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.
Abstract translation: 发光装置包括形成在基板上的第一导电半导体层，形成在第一导电半导体层上并具有多个孔的掩模层，在第一导电半导体层上垂直生长的多个垂直发光结构，通过 所述多个孔，围绕所述第一导电半导体层上的所述多个垂直发光结构的电流扩散层，以及填充所述电流扩散层上的所述多个垂直发光结构之间的空间的电介质反射器。
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公开(公告)号：US09159882B2
公开(公告)日：2015-10-13
申请号：US14501232
申请日：2014-09-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Wook Hwang , Ju-Bin Seo , Ji-Hye Yeon , Geon-Wook Yoo , Dong-hoon Lee
CPC classification number: H01L33/46 , F21K9/232 , F21Y2115/10 , H01L33/08 , H01L33/24 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/54 , H01L2224/16225
Abstract: A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.
Abstract translation: 半导体发光器件包括具有主表面的第一导电类型半导体层，从第一导电类型半导体层向上突出的多个垂直型发光结构; 覆盖多个垂直型发光结构的透明电极层; 以及设置在所述透明电极层上的绝缘填充层。 绝缘填充层平行于第一导电类型半导体层延伸以覆盖多个垂直型发光结构。 设置在从多个垂直型发光结构产生的光从外部照射的光传输路径上的第一导电类型半导体层和绝缘填充层中选择的一个具有不平坦的外表面。 不平坦的外表面与所选择的外表面的内表面相反，并且内表面面向多个垂直型发光结构。
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公开(公告)号：US09054259B2
公开(公告)日：2015-06-09
申请号：US13844782
申请日：2013-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-wook Hwang , Cheol-Soo Sone , Geon-wook Yoo , Dong-hoon Lee , Nam-goo Cha , Jae-hyeok Heo
Abstract: The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency.
Abstract translation: 本申请涉及一种发光器件及其制造方法。 该装置包括下部，以及设置在下部的垂直发光结构。 导电构件部分地围绕垂直发光结构，并且反射构件设置在垂直发光结构之间。 反射构件反射从垂直发光结构沿横向发射的光，以使从垂直发光结构沿横向发射的光透过光吸收构件的次数最小化，从而增加 发光效率高。
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公开(公告)号：US20130313583A1
公开(公告)日：2013-11-28
申请号：US13844782
申请日：2013-03-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyung-wook Hwang , Cheol-Soo Sone , Geno-wook Yoo , Dong-hoon Lee , Nam-goo Cha , Jae-hyeok Heo
IPC: H01L33/08
Abstract: The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency.
Abstract translation: 本申请涉及一种发光器件及其制造方法。 该装置包括下部，以及设置在下部的垂直发光结构。 导电构件部分地围绕垂直发光结构，并且反射构件设置在垂直发光结构之间。 反射构件反射从垂直发光结构沿横向发射的光，以使从垂直发光结构沿横向发射的光透过光吸收构件的次数最小化，从而增加 发光效率高。
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公开(公告)号：US10218428B2
公开(公告)日：2019-02-26
申请号：US15468713
申请日：2017-03-24
Applicant: Samsung Electronics Co., Ltd. , Kyungpook National University Industry-Academic Cooperation Foundation
Inventor： Sun-bum Han , Bong Gyun Jo , Dong Seog Han , Won-sang Kim , In-kwon Paik , Dong-hoon Lee , Yong-deok Chang
Abstract: A receiver and a detecting method thereof are provided. The receiver includes a plurality of antennas receiving a transmitted signal through multiple paths; and an equalizer collecting a plurality of sample signals by reflecting signals received in other antennas in the signals received in the plurality of antennas, and detecting a symbol of the transmitted signal by combining the plurality of sample signals that are collected with each other.
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Patent Agency Ranking
6.发明授权公开(公告)号：US09159877B2
公开(公告)日：2015-10-13
申请号：US14071411
申请日：2013-11-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam-goo Cha , Dong-ho Kim , Geon-wook Yoo , Dong-hoon Lee
CPC classification number: H01L33/0075 , B82Y20/00 , H01L33/002 , H01L33/04 , H01L33/06 , H01L33/10 , H01L33/24 , H01L33/44 , H01L33/46 , H01L2933/0025
Abstract: A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.
Abstract translation: 一种纳米结构的发光器件，包括第一半导体层; 形成在第一半导体层上的纳米结构。 纳米结构包括纳米孔，以及形成在纳米孔的表面上并且其表面被平坦化的有源层和第二半导体层。 导电层包围纳米结构的侧面，第一电极电连接到第一半导体层，第二电极电连接到导电层。
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公开(公告)号：US09287445B2
公开(公告)日：2016-03-15
申请号：US14106186
申请日：2013-12-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Geon-wook Yoo , Nam-goo Cha , Dong-koog Lee , Dong-hoon Lee
CPC classification number: H01L33/08 , H01L27/156 , H01L33/24 , H01L33/387
Abstract: A nano-structured light-emitting device includes a plurality of light-emitting nanostructures each having a resistant layer disposed thereon. The device includes a first semiconductor layer of a first conductivity type, and a plurality of nanostructures disposed on the first semiconductor layer. Each nanostructure includes a nanocore, and an active layer and a second semiconductor layer of a second conductivity type that enclose surfaces of the nanocores. An electrode layer encloses and covers the plurality of nanostructures A plurality of resistant layers are disposed on the electrode layer and each corresponds to a respective nanostructure of the plurality of nanostructures.
Abstract translation: 纳米结构发光器件包括多个发光纳米结构，每个发光纳米结构具有设置在其上的电阻层。 该器件包括第一导电类型的第一半导体层和设置在第一半导体层上的多个纳米结构。 每个纳米结构包括纳米孔，以及包围纳米孔表面的第二导电类型的有源层和第二半导体层。 包围并覆盖多个纳米结构的电极层多个电阻层设置在电极层上，并且每个对应于多个纳米结构的相应纳米结构。
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公开(公告)号：US10971662B2
公开(公告)日：2021-04-06
申请号：US15145972
申请日：2016-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyuk-jin Cho , Dong-hoon Lee
Abstract: A light-emitting diode (LED) package includes a light-emitting structure, a transmissive material layer on the light-emitting structure, and a support structure covering at least a portion of a side surface of the transmissive material layer, a side surface of the light-emitting structure, and at least a portion of a bottom surface of the light-emitting structure.
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9.发明授权公开(公告)号：US09583672B2
公开(公告)日：2017-02-28
申请号：US14879013
申请日：2015-10-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam-goo Cha , Dong-ho Kim , Geon-wook Yoo , Dong-hoon Lee
CPC classification number: H01L33/0075 , B82Y20/00 , H01L33/002 , H01L33/04 , H01L33/06 , H01L33/10 , H01L33/24 , H01L33/44 , H01L33/46 , H01L2933/0025
Abstract: A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.
Abstract translation: 一种纳米结构的发光器件，包括第一半导体层; 形成在第一半导体层上的纳米结构。 纳米结构包括纳米孔，以及形成在纳米孔的表面上并且其表面被平坦化的有源层和第二半导体层。 导电层包围纳米结构的侧面，第一电极电连接到第一半导体层，第二电极电连接到导电层。
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公开(公告)号：US09525100B2
公开(公告)日：2016-12-20
申请号：US15042283
申请日：2016-02-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Geon-Wook Yoo , Nam-goo Cha , Dong-kuk Lee , Dong-hoon Lee
CPC classification number: H01L33/08 , H01L27/156 , H01L33/24 , H01L33/387
Abstract: Provided is a nano-structured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures which are formed on the first type semiconductor layer and include nanocores, and active layers and second type semiconductor layers that enclose surfaces of the nanocores; an electrode layer which encloses and covers the plurality of nanostructures; and a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures.
Abstract translation: 本发明提供一种纳米结构发光器件，其包括：第一类型半导体层; 形成在第一类型半导体层上并包括纳米孔的多个纳米结构体，以及包围纳米孔表面的活性层和第二类型半导体层; 包围并覆盖多个纳米结构的电极层; 以及形成在电极层上并分别对应于多个纳米结构的多个电阻层。
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