Invention Grant
- Patent Title: Method of forming through-silicon via using laser ablation
- Patent Title (中): 使用激光烧蚀法形成硅的方法
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Application No.: US13693795Application Date: 2012-12-04
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Publication No.: US08809189B2Publication Date: 2014-08-19
- Inventor: Eui-seok Kim , Sang-kyu Bang , Soo-hyun Cho , Choo-ho Kim , Won-soo Ji
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0004508 20120113
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Methods of forming through-silicon vias by using laser ablation. A method includes, laser drilling to form a plurality of grooves by irradiating a laser beam onto an upper surface of a silicon wafer, and grinding a lower surface of the silicon wafer to form a plurality of through-silicon vias by exposing the grooves on the lower surface of the silicon wafer.
Public/Granted literature
- US20130183836A1 METHOD OF FORMING THROUGH-SILICON VIA USING LASER ABLATION Public/Granted day:2013-07-18
Information query
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