公开(公告)号：US09887330B2

公开(公告)日：2018-02-06

申请号：US15195329

申请日：2016-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hun-yong Park ,  Sang-hyun Lee ,  Gam-han Yong ,  Eui-seok Kim

IPC: H01L33/00 ,  H01L21/00 ,  H01L33/60 ,  H01L33/50 ,  H01L33/58

CPC classification number: H01L33/60 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58 ,  H01L2224/16 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0066 ,  H01L2924/00012

Abstract: A light-emitting apparatus includes a reflective layer including a cavity that penetrates the reflective layer from a top surface to a bottom surface of the reflective layer; a light-emitting device disposed in the cavity, the light-emitting device including a light-emitting stack and an electrode connected to the light-emitting stack at a bottom surface of the light-emitting stack; and a wavelength conversion layer that fills the cavity and covers a top surface and a side surface of the light-emitting device, wherein the wavelength conversion layer exposes at least a portion of the electrode to an outside.

公开(公告)号：US08809189B2

公开(公告)日：2014-08-19

申请号：US13693795

申请日：2012-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui-seok Kim ,  Sang-kyu Bang ,  Soo-hyun Cho ,  Choo-ho Kim ,  Won-soo Ji

IPC: H01L21/44

CPC classification number: H01L21/2633 ,  H01L21/76898 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods of forming through-silicon vias by using laser ablation. A method includes, laser drilling to form a plurality of grooves by irradiating a laser beam onto an upper surface of a silicon wafer, and grinding a lower surface of the silicon wafer to form a plurality of through-silicon vias by exposing the grooves on the lower surface of the silicon wafer.

Abstract translation: 通过使用激光烧蚀形成穿硅通孔的方法。 一种方法包括：激光钻孔以通过将激光束照射到硅晶片的上表面上来形成多个凹槽，以及研磨硅晶片的下表面以形成多个穿硅通孔，以通过将 硅晶片的下表面。