公开(公告)号：US08809189B2

公开(公告)日：2014-08-19

申请号：US13693795

申请日：2012-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui-seok Kim ,  Sang-kyu Bang ,  Soo-hyun Cho ,  Choo-ho Kim ,  Won-soo Ji

IPC: H01L21/44

CPC classification number: H01L21/2633 ,  H01L21/76898 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Methods of forming through-silicon vias by using laser ablation. A method includes, laser drilling to form a plurality of grooves by irradiating a laser beam onto an upper surface of a silicon wafer, and grinding a lower surface of the silicon wafer to form a plurality of through-silicon vias by exposing the grooves on the lower surface of the silicon wafer.

Abstract translation: 通过使用激光烧蚀形成穿硅通孔的方法。 一种方法包括：激光钻孔以通过将激光束照射到硅晶片的上表面上来形成多个凹槽，以及研磨硅晶片的下表面以形成多个穿硅通孔，以通过将 硅晶片的下表面。