公开(公告)号：US20240332185A1

公开(公告)日：2024-10-03

申请号：US18454832

申请日：2023-08-24

申请人： Samsung Electronics Co., Ltd.

发明人： TAE SUN KIM ,  WONHYUK HONG ,  JONGJIN LEE ,  KANG-ILL SEO

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L29/417

CPC分类号： H01L23/5286 ,  H01L21/76895 ,  H01L29/41766

摘要： Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a backside power distribution network structure (BSPDNS), a logic device region and a passive device region on the BSPDNS, a backside insulating layer including a first portion extending between the BSPDNS and the logic device region and a second portion extending between the BSPDNS and the passive device region, the passive device region including a semiconductor layer that is in the backside insulating layer, and a dam separating the first portion of the backside insulating layer from the semiconductor layer of the passive device region.

公开(公告)号：US20240079329A1

公开(公告)日：2024-03-07

申请号：US18162920

申请日：2023-02-01

申请人： Samsung Electronics Co., Ltd.

发明人： EUN SUNG KIM ,  JAE YOUNG CHOI ,  WONHYUK HONG ,  SEUNGCHAN YUN ,  JAEJIK BAEK ,  SEUNG MIN SONG ,  KANG-ILL SEO

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/535

CPC分类号： H01L23/5286 ,  H01L21/76898 ,  H01L21/823475 ,  H01L23/535

摘要： Integrated circuit devices and methods of forming the same are provided. The methods may include forming a sacrificial layer in a preliminary substrate by adding an element into the preliminary substrate, forming a transistor structure on the preliminary substrate, the transistor structure including a source/drain region, replacing the sacrificial layer with a power contact that comprises an upper surface contacting the source/drain region, and forming a power rail that contacts a lower surface of the power contact.

公开(公告)号：US20240063122A1

公开(公告)日：2024-02-22

申请号：US18147739

申请日：2022-12-29

申请人： Samsung Electronics Co., Ltd.

发明人： SEUNGCHAN YUN ,  WONHYUK HONG ,  JAEJIK BAEK ,  EUN SUNG KIM ,  KANG-ILL SEO

IPC分类号： H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L29/40 ,  H01L29/66

CPC分类号： H01L23/5286 ,  H01L27/0922 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/775 ,  H01L29/401 ,  H01L29/66439

摘要： Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a transistor including a channel region and a source/drain region contacting the channel region, a power rail that is configured be electrically connected to a power source and is spaced apart from the source/drain region in a first direction, and a power contact that is between the source/drain region and the power rail and contacts both the source/drain region and the power rail. The channel region may overlap the power contact in the first direction.

公开(公告)号：US20240363491A1

公开(公告)日：2024-10-31

申请号：US18240675

申请日：2023-08-31

申请人： Samsung Electronics Co., Ltd.

发明人： SEUNGCHAN YUN ,  WONHYUK HONG ,  PANJAE PARK ,  KANG-ILL SEO

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

摘要： Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a transistor comprising a source/drain region on a substrate; a backside power rail spaced apart from the source/drain region; and a power contact that is between the source/drain region and the backside power rail and electrically connects the source/drain region to the backside power rail. The substrate may be between the source/drain region and the backside power rail, and a centerline in a width direction of the source/drain region is angled with respect to a centerline in a width direction of the power contact.

公开(公告)号：US20230352408A1

公开(公告)日：2023-11-02

申请号：US17936106

申请日：2022-09-28

申请人： Samsung Electronics Co., Ltd.

发明人： MYUNGHOON JUNG ,  WONHYUK HONG ,  INCHAN HWANG ,  GUNHO JO ,  KANG-ILL SEO

IPC分类号： H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L21/8238 ,  H01L29/66

CPC分类号： H01L23/5286 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/775 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823871 ,  H01L21/823878 ,  H01L29/66439

摘要： Methods of forming an integrated circuit devices may include providing first and second active regions, an isolation layer, and first and second sacrificial stack structures. The first and second sacrificial stack structures may contact the first and second active regions, and the first and second sacrificial stack structures may each include a channel layer and a sacrificial layer. The methods may also include forming an etch stop layer on the isolation layer, replacing portions of the first and second sacrificial stack structures with first and second source/drain regions, forming a front contact including a front contact plug, forming a back-side insulator, and forming a back contact plug in the isolation layer and the back-side insulator. At least one of a portion of the front contact plug and a portion of the back contact plug may be in the etch stop layer.