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1.发明公开公开(公告)号：US20240079329A1
公开(公告)日：2024-03-07
申请号：US18162920
申请日：2023-02-01
发明人： EUN SUNG KIM , JAE YOUNG CHOI , WONHYUK HONG , SEUNGCHAN YUN , JAEJIK BAEK , SEUNG MIN SONG , KANG-ILL SEO
IPC分类号： H01L23/528 , H01L21/768 , H01L21/8234 , H01L23/535
CPC分类号： H01L23/5286 , H01L21/76898 , H01L21/823475 , H01L23/535
摘要： Integrated circuit devices and methods of forming the same are provided. The methods may include forming a sacrificial layer in a preliminary substrate by adding an element into the preliminary substrate, forming a transistor structure on the preliminary substrate, the transistor structure including a source/drain region, replacing the sacrificial layer with a power contact that comprises an upper surface contacting the source/drain region, and forming a power rail that contacts a lower surface of the power contact.
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2.发明公开公开(公告)号：US20240063122A1
公开(公告)日：2024-02-22
申请号：US18147739
申请日：2022-12-29
发明人： SEUNGCHAN YUN , WONHYUK HONG , JAEJIK BAEK , EUN SUNG KIM , KANG-ILL SEO
IPC分类号： H01L23/528 , H01L27/092 , H01L29/06 , H01L29/423 , H01L29/417 , H01L29/775 , H01L29/40 , H01L29/66
CPC分类号： H01L23/5286 , H01L27/0922 , H01L29/0673 , H01L29/42392 , H01L29/41733 , H01L29/775 , H01L29/401 , H01L29/66439
摘要： Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a transistor including a channel region and a source/drain region contacting the channel region, a power rail that is configured be electrically connected to a power source and is spaced apart from the source/drain region in a first direction, and a power contact that is between the source/drain region and the power rail and contacts both the source/drain region and the power rail. The channel region may overlap the power contact in the first direction.
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