公开(公告)号：US20240079329A1

公开(公告)日：2024-03-07

申请号：US18162920

申请日：2023-02-01

申请人： Samsung Electronics Co., Ltd.

发明人： EUN SUNG KIM ,  JAE YOUNG CHOI ,  WONHYUK HONG ,  SEUNGCHAN YUN ,  JAEJIK BAEK ,  SEUNG MIN SONG ,  KANG-ILL SEO

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/535

CPC分类号： H01L23/5286 ,  H01L21/76898 ,  H01L21/823475 ,  H01L23/535

摘要： Integrated circuit devices and methods of forming the same are provided. The methods may include forming a sacrificial layer in a preliminary substrate by adding an element into the preliminary substrate, forming a transistor structure on the preliminary substrate, the transistor structure including a source/drain region, replacing the sacrificial layer with a power contact that comprises an upper surface contacting the source/drain region, and forming a power rail that contacts a lower surface of the power contact.

公开(公告)号：US20240063122A1

公开(公告)日：2024-02-22

申请号：US18147739

申请日：2022-12-29

申请人： Samsung Electronics Co., Ltd.

发明人： SEUNGCHAN YUN ,  WONHYUK HONG ,  JAEJIK BAEK ,  EUN SUNG KIM ,  KANG-ILL SEO

IPC分类号： H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/775 ,  H01L29/40 ,  H01L29/66

CPC分类号： H01L23/5286 ,  H01L27/0922 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/775 ,  H01L29/401 ,  H01L29/66439

摘要： Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a transistor including a channel region and a source/drain region contacting the channel region, a power rail that is configured be electrically connected to a power source and is spaced apart from the source/drain region in a first direction, and a power contact that is between the source/drain region and the power rail and contacts both the source/drain region and the power rail. The channel region may overlap the power contact in the first direction.

公开(公告)号：US20240363491A1

公开(公告)日：2024-10-31

申请号：US18240675

申请日：2023-08-31

申请人： Samsung Electronics Co., Ltd.

发明人： SEUNGCHAN YUN ,  WONHYUK HONG ,  PANJAE PARK ,  KANG-ILL SEO

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

摘要： Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a transistor comprising a source/drain region on a substrate; a backside power rail spaced apart from the source/drain region; and a power contact that is between the source/drain region and the backside power rail and electrically connects the source/drain region to the backside power rail. The substrate may be between the source/drain region and the backside power rail, and a centerline in a width direction of the source/drain region is angled with respect to a centerline in a width direction of the power contact.

公开(公告)号：US20210175352A1

公开(公告)日：2021-06-10

申请号：US17026551

申请日：2020-09-21

申请人： Samsung Electronics Co., Ltd.

发明人： DONGHWAN HAN ,  SEUNGCHAN YUN

IPC分类号： H01L29/78 ,  H01L27/092 ,  H01L27/12 ,  H01L21/8238

摘要： A semiconductor device includes a substrate including an active region that extends in a first direction; a gate structure that intersects the active region and that extends in a second direction; a source/drain region on the active region on at least one side of the gate structure; a contact plug on the source/drain region on the at least one side of the gate structure; and a contact insulating layer on sidewalls of the contact plug, wherein a lower end of the contact plug is closer to the substrate than a lower end of the source/drain region.