公开(公告)号：US20240392190A1

公开(公告)日：2024-11-28

申请号：US18775029

申请日：2024-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shang Hyeun PARK ,  Tae Gon KIM ,  Shin Ae JUN

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/02 ,  C09K11/08 ,  H10K59/38

Abstract: A quantum dot composite comprising: a matrix and a plurality of quantum dots dispersed in the matrix, wherein the plurality of the quantum dots comprises a semiconductor nanocrystal core including indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, and the semiconductor nanocrystal shell including zinc, selenium, and sulfur. The arithmetic size of the plurality of the quantum dots is greater than or equal to about 8 nm, wherein the quantum dot composite is configured to emit red light, and wherein when the quantum dot composite is irradiated with light of a wavelength of from about 450 nm to about 470 nm for a time period of less than or equal to about 500 hours, a luminance increase of the quantum dot composite is less than or equal to about 1.2% of an initial luminance of the quantum dot composite.

公开(公告)号：US20230374379A1

公开(公告)日：2023-11-23

申请号：US18229709

申请日：2023-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam PARK ,  Tae Gon KIM ,  Jooyeon AHN ,  Ji-Yeong KIM ,  Nayoun WON ,  Shin Ae JUN

IPC: C09K11/88 ,  C09K11/02 ,  G02F1/13357 ,  C09K11/08 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38

CPC classification number: C09K11/883 ,  C09K11/02 ,  G02F1/133617 ,  C09K11/0883 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00

Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.

公开(公告)号：US20180237690A1

公开(公告)日：2018-08-23

申请号：US15900496

申请日：2018-02-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd. ,  SAMSUNG SDI CO., LTD.

Inventor： Deukseok CHUNG ,  Tae Won JEONG ,  Tae Gon KIM ,  Shin Ae JUN

IPC: C09K11/02 ,  C09K11/70 ,  C08F220/06 ,  C08G77/04 ,  C08F22/10 ,  C08K3/32 ,  C08K3/30 ,  C08K9/10 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  G03F7/004 ,  G03F7/033 ,  G02F1/1335

CPC classification number: C09K11/025 ,  B82Y20/00 ,  B82Y40/00 ,  C08F22/105 ,  C08F220/06 ,  C08F2800/10 ,  C08G77/04 ,  C08G77/20 ,  C08K3/30 ,  C08K3/32 ,  C08K9/10 ,  C08K2003/3036 ,  C08K2201/001 ,  C08K2201/011 ,  C09D4/00 ,  C09D133/02 ,  C09K11/703 ,  G02F1/133516 ,  G02F1/133617 ,  G02F2201/50 ,  G03F7/0007 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/033 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/322 ,  G03F7/40 ,  Y10S977/774 ,  Y10S977/818 ,  Y10S977/824 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: A layered structure including a luminescent layer including a quantum dot polymer composite pattern; an inorganic layer disposed on the luminescent layer, the inorganic layer including a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a combination thereof; and an organic layer being disposed between the luminescent layer and the inorganic layer, the organic layer including an organic polymer, a method of producing the same, and a liquid crystal display including the same. The quantum dot polymer composite pattern includes a repeating section including a polymer matrix; and a plurality of quantum dots (e.g., dispersed) in the polymer matrix, the repeating unit including a first section configured to emit light of a first light, and wherein the inorganic layer is disposed on at least a portion of a surface of the repeating section.

公开(公告)号：US20170373151A1

公开(公告)日：2017-12-28

申请号：US15424081

申请日：2017-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuichiro SASAKI ,  Bong Soo KIM ,  Tae Gon KIM ,  Yoshiya MORIYAMA ,  Seung Hyun SONG ,  Alexander SCHMIDT ,  Abraham YOO ,  Heung Soon LEE ,  Kyung In CHOI

IPC: H01L29/10 ,  H01L29/08 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/1083 ,  H01L21/2236 ,  H01L21/26586 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823892 ,  H01L27/0921 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed region between the protruding regions. Gate structures overlapping the protruding regions are disposed. An epitaxial layer is disposed in the recessed region to have a height greater than a width. An impurity region is disposed in the fin active region, surrounds side walls and a bottom of the recessed region, has the same conductivity type as a conductivity type of the epitaxial layer, and includes a majority impurity that is different from a majority impurity included in at least a portion of the epitaxial layer.

公开(公告)号：US20240172464A1

公开(公告)日：2024-05-23

申请号：US18404975

申请日：2024-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nayoun WON ,  Mi Hye LIM ,  Tae Gon KIM ,  Taekhoon KIM ,  Shang Hyeun PARK ,  Shin Ae JUN

IPC: H10K50/115 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88

CPC classification number: H10K50/115 ,  C09K11/02 ,  C09K11/565 ,  C09K11/703 ,  C09K11/883

Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.

公开(公告)号：US20240006497A1

公开(公告)日：2024-01-04

申请号：US18138877

申请日：2023-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Jin JEONG ,  Myung Gil KANG ,  Tae Gon KIM ,  Dong Won KIM ,  Ju Ri LEE

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L29/775 ,  H01L29/66

CPC classification number: H01L29/41775 ,  H01L29/42392 ,  H01L29/0673 ,  H01L29/78696 ,  H01L29/775 ,  H01L29/66545

Abstract: A semiconductor device includes an active pattern having a lower pattern, and a plurality of sheet patterns spaced apart from the lower pattern in a first direction; first and second structures disposed on the lower pattern, wherein the first and second structures are arranged and spaced apart from each other in a second direction; a source/drain recess defined between first and second gate structures; and a source/drain pattern filling the source/drain recess, wherein the source/drain pattern includes a stacking fault spaced apart from the lower pattern.

公开(公告)号：US20230121293A1

公开(公告)日：2023-04-20

申请号：US18074570

申请日：2022-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon YANG ,  Garam PARK ,  Shin Ae JUN ,  Tae Gon KIM ,  Taekhoon KIM

IPC: C09K11/70 ,  C09K11/08 ,  C09K11/02 ,  H10K59/12 ,  G02F1/13357 ,  H10K59/38

Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

公开(公告)号：US20230043195A1

公开(公告)日：2023-02-09

申请号：US17871127

申请日：2022-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon KIM ,  Shang Hyeun PARK ,  Taekhoon KIM ,  Garam PARK ,  Nayoun WON

IPC: C09K11/02 ,  C09K11/88 ,  C09K11/56 ,  C09K11/70 ,  H01L27/32

Abstract: A quantum dot, a quantum dot composite including the quantum dot, a display panel including the quantum dot composite, and an electronic device including the display panel are provided. The quantum dot includes indium, zinc, phosphorus, and selenium, and does not include cadmium, and has an optical density (OD) per 1 mg for a wavelength of 450 nm of from about 0.2 to about 0.27 and an emission peak of from about 500 nm to about 550 nm, or an optical density per 1 mg for a wavelength of about 450 nm of from about 0.5 to about 0.7 and an emission peak of from about 610 nm to about 660 nm.

公开(公告)号：US20180105739A1

公开(公告)日：2018-04-19

申请号：US15787214

申请日：2017-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd ,  SAMSUNG SDI CO., LTD.

Inventor： Tae Gon KIM ,  Ha Il KWON ,  Shin Ae JUN

IPC: C09K11/02 ,  C09K11/88 ,  C09D5/22 ,  G03F7/004 ,  G03F7/00 ,  G03F7/031 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  H01L33/50 ,  G02F1/1335 ,  G02B5/20

CPC classification number: C09K11/025 ,  B82Y20/00 ,  B82Y40/00 ,  C08K3/00 ,  C09D5/22 ,  C09K11/883 ,  G02B5/201 ,  G02F1/133514 ,  G03F7/00 ,  G03F7/0007 ,  G03F7/0044 ,  G03F7/031 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/322 ,  G03F7/40 ,  H01L31/0547 ,  H01L31/055 ,  H01L33/502 ,  H01L2933/0033 ,  H01L2933/0041 ,  Y10S977/774 ,  Y10S977/783 ,  Y10S977/818 ,  Y10S977/824 ,  Y10S977/897 ,  Y10S977/95

Abstract: A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.

公开(公告)号：US20170306222A1

公开(公告)日：2017-10-26

申请号：US15644984

申请日：2017-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee LEE ,  Hyun A KANG ,  Eun Joo JANG ,  Sang Eui LEE ,  Shin Ae JUN ,  Oul CHO ,  Tae Gon KIM ,  Tae Hyung KIM

IPC: C09K11/02 ,  C09K11/59 ,  C01B17/20 ,  C08L33/04 ,  G02F1/361 ,  G02F1/1335

CPC classification number: C09K11/025 ,  B24B1/00 ,  C01B17/20 ,  C08L33/04 ,  C09K11/59 ,  G02F1/1335 ,  G02F1/3615

Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.