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    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200273747A1

    公开(公告)日：2020-08-27

    申请号：US16711845

    申请日：2019-12-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seung-min RYU ,  Younsoo KIM ,  Gyu-hee PARK ,  Jaesoon LIM ,  Younjoung CHO

    IPC: H01L21/768 ,  H01L21/285 ,  H01L27/108 ,  H01L21/8238

    Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.

    INTEGRATED CIRCUIT DEVICE
    5.
    发明申请
    INTEGRATED CIRCUIT DEVICE 有权

    公开(公告)号：US20210273039A1

    公开(公告)日：2021-09-02

    申请号：US17324492

    申请日：2021-05-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Youn-soo KIM ,  Seung-min RYU ,  Chang-su WOO ,  Hyung-suk JUNG ,  Kyu-ho CHO ,  Youn-joung CHO

    IPC: H01L49/02 ,  H01L27/108

    Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

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