公开(公告)号：US20250154648A1

公开(公告)日：2025-05-15

申请号：US18791776

申请日：2024-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunwoo KIM ,  Daeun KIM ,  Akio SAITO ,  Tomoharu YOSHINO ,  Kazuki HARANO ,  Takashi HIGASHINO ,  Shotaro TAGUCHI ,  Yoshiki MANABE ,  Yu Jin PARK ,  Byung Seok LEE ,  Seung-min RYU ,  Gyu-Hee PARK ,  Younjoung CHO

IPC: C23C16/34 ,  C07F17/00 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

Abstract: Provided are a precursor for forming a metal thin film including a metal compound represented by Chemical Formula 1, a method for manufacturing a metal thin film using the same, and a metal thin film manufactured by the method.

公开(公告)号：US20210175073A1

公开(公告)日：2021-06-10

申请号：US17022198

申请日：2020-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Min RYU ,  Jiyu CHOI ,  Gyu-Hee PARK ,  Younjoung CHO

IPC: H01L21/02 ,  C23C16/18 ,  C23C16/455 ,  C23C16/08 ,  C23C16/30 ,  C07C211/08 ,  C01G19/00

Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: M2L1)n  [Chemical Formula 1] In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.

公开(公告)号：US20190304770A1

公开(公告)日：2019-10-03

申请号：US16155976

申请日：2018-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-Hee PARK ,  Yangsun PARK ,  Jaesoon LIM ,  Younjoung CHO

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/762 ,  C23C16/455 ,  C23C16/08 ,  C23C16/20

Abstract: A method of fabricating a semiconductor device, the method including forming semiconductor patterns on a substrate such that the semiconductor patterns are vertically spaced apart from each other; and forming a metal work function pattern to fill a space between the semiconductor patterns, wherein forming the metal work function pattern includes performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate.