公开(公告)号：US20210040130A1

公开(公告)日：2021-02-11

申请号：US16881283

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung LEE ,  Seungmin RYU ,  Gyuhee PARK ,  Jaesoon LIM ,  Younjoung CHO ,  Akio SAITO ,  Wakana FUSE ,  Yutaro AOKI ,  Takanori KOIDE

IPC: C07F17/00 ,  C09D1/00 ,  C01B21/06

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

公开(公告)号：US20250154648A1

公开(公告)日：2025-05-15

申请号：US18791776

申请日：2024-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunwoo KIM ,  Daeun KIM ,  Akio SAITO ,  Tomoharu YOSHINO ,  Kazuki HARANO ,  Takashi HIGASHINO ,  Shotaro TAGUCHI ,  Yoshiki MANABE ,  Yu Jin PARK ,  Byung Seok LEE ,  Seung-min RYU ,  Gyu-Hee PARK ,  Younjoung CHO

IPC: C23C16/34 ,  C07F17/00 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

Abstract: Provided are a precursor for forming a metal thin film including a metal compound represented by Chemical Formula 1, a method for manufacturing a metal thin film using the same, and a metal thin film manufactured by the method.