公开(公告)号：US12166093B2

公开(公告)日：2024-12-10

申请号：US17216903

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Ki Min ,  Chae Ho Na ,  Sang Koo Kang ,  Ik Soo Kim ,  Dong Hyun Roh

IPC: H01L29/417 ,  H01L23/535 ,  H01L27/092 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device may include first and second fin-shaped patterns on a substrate, that extend in a first direction, and are spaced apart from each other in a second direction. A first epitaxial pattern may be on the first fin-shaped pattern, and a second epitaxial pattern may be on the second fin-shaped pattern. A field insulating layer may be on the substrate, and may cover a sidewall of the first fin-shaped pattern, a sidewall of the second fin-shaped pattern, a part of a sidewall of the first epitaxial pattern, and a part of a sidewall of the second epitaxial pattern. The top surface of the field insulating layer may be higher than the bottom surface of the first epitaxial pattern and the bottom surface of the second epitaxial pattern.

公开(公告)号：US20220069092A1

公开(公告)日：2022-03-03

申请号：US17216903

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Ki Min ,  Chae Ho Na ,  Sang Koo Kang ,  Ik Soo Kim ,  Dong Hyun Roh

IPC: H01L29/417 ,  H01L27/092 ,  H01L23/535 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device may include first and second fin-shaped patterns on a substrate, that extend in a first direction, and are spaced apart from each other in a second direction. A first epitaxial pattern may be on the first fin-shaped pattern, and a second epitaxial pattern may be on the second fin-shaped pattern. A field insulating layer may be on the substrate, and may cover a sidewall of the first fin-shaped pattern, a sidewall of the second fin-shaped pattern, a part of a sidewall of the first epitaxial pattern, and a part of a sidewall of the second epitaxial pattern. The top surface of the field insulating layer may be higher than the bottom surface of the first epitaxial pattern and the bottom surface of the second epitaxial pattern.

公开(公告)号：US10128240B2

公开(公告)日：2018-11-13

申请号：US15807012

申请日：2017-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Ki Min ,  Sang Koo Kang ,  Koung Min Ryu ,  Gi Gwan Park

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/311 ,  H01L21/8234 ,  H01L23/535 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a substrate including first to third regions, wherein the third region is positioned in a first direction between the first and second regions, a fin protruding on the substrate and extending in the first direction, first and second gate structures respectively formed on the fin in the first and second regions, first and second spacers formed with spacing apart from each other on the fin in the third region. The first and second spacers are sloped in a direction away from each other, and the first and second spacers and an upper surface of the fin define a plurality of acute angles, the first and second spacers defining a recess, the fin and the first and second spacers defining sidewalls of the recess, and a device isolating film substantially filling the recess.

公开(公告)号：US20180138174A1

公开(公告)日：2018-05-17

申请号：US15807012

申请日：2017-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun Ki MIN ,  Sang Koo Kang ,  Koung Min Ryu ,  Gi Gwan Park

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L23/535 ,  H01L21/8234 ,  H01L21/311 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/762 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/4232 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate including first to third regions, wherein the third region is positioned in a first direction between the first and second regions, a fin protruding on the substrate and extending in the first direction, first and second gate structures respectively formed on the fin in the first and second regions, first and second spacers formed with spacing apart from each other on the fin in the third region. The first and second spacers are sloped in a direction away from each other, and the first and second spacers and an upper surface of the fin define a plurality of acute angles, the first and second spacers defining a recess, the fin and the first and second spacers defining sidewalls of the recess, and a device isolating film substantially filling the recess.